Results 171 to 180 of about 31,863 (290)

Stoichiometry‐Programmed MXenes via Precursor Engineering for High‐Performance EMI Shielding and Energy Storage

open access: yesAdvanced Materials, EarlyView.
Precursor carbon stoichiometry programs internal strain and oxygen substitution in Ti3AlCxO2‐x, deterministically switching Ti3CxO2‐xTz MXenes between highly aligned 2D nanosheets and spontaneous 1D nanoscrolls. This synthesis‐stage architecture control enables ultrathin X/W‐band EMI shielding with outstanding mass‐normalized performance and bending ...
Jaeeun Park   +12 more
wiley   +1 more source

T-RAIM for Precise Orbit Determination in LEO-PNT. [PDF]

open access: yesSensors (Basel)
Gioia C   +4 more
europepmc   +1 more source

Current Switching of Topological Spin Chirality in the van der Waals Antiferromagnet Co1/3TaS2

open access: yesAdvanced Materials, EarlyView.
Spin chirality plays a central role in quantum magnetism, governing spin winding and generating real‐space Berry phases. We propose the intriguing concept of current‐switching spin chirality and demonstrate it via unconventional intrinsic self‐spin‐orbit‐torque in pristine Co1/3TaS2, purely by electrical current and with high energy efficiency.
Kai‐Xuan Zhang   +3 more
wiley   +1 more source

Droplet Electricity Generators With Maximized Energy Collection Zone Enabled by Aloe‐Inspired Midrib and Cuticle

open access: yesAdvanced Materials, EarlyView.
An Aloe‐pinspired droplet electricity generator (A‐DEG) overcomes the limited energy collection zone of conventional DEGs by guiding impact droplets through a channeling midrib and artificial cuticle. The channeling midrib induces uni‐directional droplet spreading, while the artificial cuticle on the midrib further reinforces this behavior through its ...
Gibeom Lee   +8 more
wiley   +1 more source

Dielectric and Gate Metal Engineering for Threshold Voltage Modulation in Enhancement Mode Monolayer MoS2 Field Effect Transistors

open access: yesAdvanced Materials, EarlyView.
Enhancement‐mode monolayer MoS2 FETs with low threshold voltage are essential for low‐power electronics. The threshold voltage can be tuned by the gate metal work function when the semiconductor/dielectric interface is clean. Interfaces between monolayer MoS2 and ZrO2 or hBN allow effective work‐function modulation of the threshold voltage, in contrast
Lixin Liu   +10 more
wiley   +1 more source

Resonant Domain Wall Dynamics in a Three‐Dimensional Magnetic Nano Double Helix

open access: yesAdvanced Materials, EarlyView.
3D magnetic nanostructures promise exciting possibilities for magnetization dynamics. However, experimental realizations remain scarce. In nanoprinted cobalt double helices, time‐resolved X‐ray microscopy reveals harmonic domain wall dynamics. Simulations identify the mode and additional higher‐frequency resonances, revealing a rich dynamic landscape ...
Pamela Morales‐Fernández   +15 more
wiley   +1 more source

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