Results 171 to 180 of about 104,361 (241)

Near‐Unity Chiral Lasing Enabled by Quasi‐Bound States in the Continuum

open access: yesAdvanced Materials, EarlyView.
Nanoimprinted chiral array that supports bound states in the continuum is doped with an efficient non‐chiral molecule (Rhodamine‐B) acting as gain medium to produce fully circularly polarized lasing emission. The chiral lasing wavelength can be tuned across the emission band of Rhodamine‐B by adjusting the coating thickness of the TiO2 high refractive ...
Jose Mendoza‐Carreño   +5 more
wiley   +1 more source

Transient Laser‐Shocked Synthesis of Amorphous Layer‐Supported Metal Nanocrystals for Efficient Nitrate Reduction

open access: yesAdvanced Materials, EarlyView.
A general, versatile laser‐shock synthesis process is reported to produce various bimetallic CuNi, CuFe, CuCo, and medium‐entropy CuFeCoNi heterostructures, in which crystalline metal nanoparticles are anchored to amorphous hydroxide supports. During nitrate reduction reaction, the heterostructures undergo dynamic amorphous/crystalline reconstruction ...
Weihua Guo   +18 more
wiley   +1 more source

Bias‐Field Free Single‐Frequency CW‐ODMR of Nitrogen‐Vacancy Centers in Diamond for the Detection of Transient Electrical Signals

open access: yesAdvanced Materials Interfaces, EarlyView.
Simplified quantum sensing technique for the detection of short electrical signals occurring in neuronal signaling or bioinspired technologies. We demonstrate a single frequency continuous‐wave optically detected magnetic resonance (CW‐ODMR) approach to sense signals that can be as short as 0.2 ms.
João Paulo Silva   +4 more
wiley   +1 more source

Measuring and Manipulating Density of States in Two‐Dimensional Materials With Electrochemical Capacitance

open access: yesAdvanced Materials Interfaces, EarlyView.
We report electrochemical quantum capacitance spectroscopy as an ambient, in situ probe for defect‐mediated electronic structure at 2D material interfaces. Using monolayer MoS2, the method resolves band edges and vacancy states, tracks sulfur‐vacancy evolution during hydrogen evolution, and links interfacial density‐of‐states changes to nearly ...
Mengyu Yan   +9 more
wiley   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

open access: yesAdvanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci   +12 more
wiley   +1 more source

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