Results 191 to 200 of about 210,468 (297)

Laser‐Assisted Phase Engineering of 2D MoS2 for Efficient Solution‐Processed Electronics

open access: yesAdvanced Materials, EarlyView.
Here, local laser‐assisted phase transition from solution‐processed phase‐pure 1T′ to 2H MoS2 is shown to critically depend on the irradiation atmosphere. While processing in air leads to damaged insulating regions, inert conditions yield semiconducting 2H domains, enabling direct field‐effect transistor patterning with optimized lateral 1T′‐2H MoS2 ...
Anna Zhuravlova   +10 more
wiley   +1 more source

Acute isolated traumatic anterior pisiform dislocation in an adult: A case report. [PDF]

open access: yesTrauma Case Rep
Shukla D   +5 more
europepmc   +1 more source

A Scalable Perovskite Platform With Multi‐State Photoresponsivity for In‐Sensor Saliency Detection

open access: yesAdvanced Materials, EarlyView.
A scalable in‐sensor computing platform (32 × 32 array) with ultra‐low variability is developed by incorporating ferroelectric copolymers into halide perovskite thin films. These devices achieve 1000 programmable photoresponsivity states and high thermal reliability.
Xuechao Xing   +10 more
wiley   +1 more source

Composition Restoration Enables Recycling of Mixed‐Cation, Mixed‐Halide Perovskites for Solar Cells

open access: yesAdvanced Materials, EarlyView.
Compositional drift during processing prevents the direct recycling of mixed‐cation, mixed‐halide perovskites. This work introduces a framework to quantitatively audit and restore recovered materials, enabling closed‐loop recycling with efficiencies comparable to virgin perovskites.
Zhenni Wu   +12 more
wiley   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

open access: yesAdvanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci   +12 more
wiley   +1 more source

Microwave Absorption for Detection of Dirac Fermions in SnTe Films

open access: yesAdvanced Materials Interfaces, EarlyView.
Microwave absorption can detect Dirac fermions in samples exposed to the atmosphere. Results showed that although topological surface states are robust against environmental degradation, they are not detectable by electrical transport measurements. Hence, microwave absorption can detect Dirac fermions even in samples whose surfaces have deteriorated ...
Wellington P. do Prado   +8 more
wiley   +1 more source

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