Results 71 to 80 of about 156,807 (282)

Smarter Sensors Through Machine Learning: Historical Insights and Emerging Trends across Sensor Technologies

open access: yesAdvanced Functional Materials, EarlyView.
This review highlights how machine learning (ML) algorithms are employed to enhance sensor performance, focusing on gas and physical sensors such as haptic and strain devices. By addressing current bottlenecks and enabling simultaneous improvement of multiple metrics, these approaches pave the way toward next‐generation, real‐world sensor applications.
Kichul Lee   +17 more
wiley   +1 more source

Intermediate-phase-assisted low-temperature formation of γ-CsPbI3 films for high-efficiency deep-red light-emitting devices

open access: yesNature Communications, 2020
Exploiting low-temperature formed black phase CsPbI3 for light-emitting applications remains a challenge. Here, the authors propose a method to enable the deposition of γ-CsPbI3 films at 100C and demonstrate a light-emitting diode with an external ...
Chang Yi   +16 more
doaj   +1 more source

Temperature compensation of light-emitting diodes [PDF]

open access: yes, 1972
Circuit which includes a thermistor-resistor combination to compensate for temperature fluctuations by supplying input voltage to light-emitting diode, maintains constant light output.
Burrous, C. N., Deboo, G. J.
core   +1 more source

Exciton Dissociation Dynamics in Model Donor-Acceptor Polymer Heterojunctions: I. Energetics and Spectra

open access: yes, 2005
In this paper we consider the essential electronic excited states in parallel chains of semiconducting polymers that are currently being explored for photovoltaic and light-emitting diode applications.
Eric R. Bittner   +3 more
core   +1 more source

Electroluminescence from single nanowires by tunnel injection: an experimental study [PDF]

open access: yes, 2007
We present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the nanowire.
Federico Capasso   +12 more
core   +2 more sources

Synergistic Compatibilization of CsPbBr3 Perovskites and HfO2 Nanocrystals for Hybrid Sensitized Nanoscintillators

open access: yesAdvanced Functional Materials, EarlyView.
Lead halide perovskite nanocrystals are promising scintillators but suffer from reabsorption losses and limited compatibility with high‐Z additives. Hybridization of CsPbBr3 nanocrystals with PbBr2‐passivated HfO2 nanoparticle sensitizers, achieved during or after synthesis, produces stable composites with maintained optical quality, improved ...
Francesco Bruni   +17 more
wiley   +1 more source

Anti-bunched photons from a lateral light-emitting diode

open access: yes, 2011
We demonstrate anti-bunched emission from a lateral-light emitting diode. Sub-Poissonian emission statistic, with a g$^{(2)}$(0)=0.7, is achieved at cryogenic temperature in the pulsed low-current regime, by exploiting electron injection through shallow ...
Beere, Harvey E.   +6 more
core   +1 more source

Spin injection in Silicon at zero magnetic field [PDF]

open access: yes, 2009
In this letter, we show efficient electrical spin injection into a SiGe based \textit{p-i-n} light emitting diode from the remanent state of a perpendicularly magnetized ferromagnetic contact.
Aranov A. G.   +10 more
core   +4 more sources

Selective Charge Injection via Topological van der Waals Contacts for Barrier‐Free p‐Type TMD Transistors

open access: yesAdvanced Functional Materials, EarlyView.
 Topological van der Waals contacts represent a new class of electrodes for 2D semiconductors, enabling precise control of the Schottky barrier height (SBH) and contact resistance (RC) through interlayer distance and orbital hybridization engineering. In Se‐based transition metal dichalcogenides, these contacts achieve an ultralow SBH of 7 meV, RC of 0.
Soheil Ghods   +15 more
wiley   +1 more source

n-ZnO/p-GaN heterojunction light-emitting diodes featuring a buried polarization-induced tunneling junction

open access: yesAIP Advances, 2016
n-ZnO/p-GaN heterojunction light-emitting diodes with a p-GaN/Al0.1Ga0.9N/n+-GaN polarization-induced tunneling junction (PITJ) were fabricated by metal-organic chemical vapor deposition.
Ling Li   +7 more
doaj   +1 more source

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