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Improving light extraction efficiency of PhC LED
2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM), 2016In this work we focus on improving light extraction efficiency of PhC LED. Studied LED structure was based on GaAs/AlGaAs material system. 1D PhC was patterned on the top of the LED structure with 3 different periods (500 nm, 600 nm, 800 nm). Several studies confirm improving light extraction efficiency of studied LED structure using PhC patterning. In
P. Hronec +4 more
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Light extraction efficiency analysis of fluorescent OLEDs device
Optical and Quantum Electronics, 2021Computation simulation study has been performed to demonstrate the fluorescent properties of the organic light-emitting diode (OLED) device structure. The critical angle is defined at emission wavelength 500 nm for the crown glass-air boundary with the radiant intensities of the s- and p-polarized light increased significantly at the critical angle ...
Arvind Sharma, T. D. Das
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High-efficiency light injection and extraction using fiber bending
Optical Fiber Communication Conference, 2017We achieve a temporary optical coupler that injects/extracts light into/from a fiber with high efficiency by using fiber bending. We demonstrate experimentally that extraction efficiency is improved by using a double-clad fiber.
Takui Uematsu +4 more
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Light Extraction of High-Efficient Light-Emitting Diodes
2017This chapter deals with methods for fabricating high-efficient light-emitting diodes (LEDs) with higher light extraction efficiency (LEE). Some LED prototypes are then reviewed to investigate how their performance was enhanced by utilizing a variety of chip processes.
Ja-Yeon Kim +6 more
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2013
We describe simulations of the light extraction efficiency (LEE) as a function of the major materials parameters and geometries in the three main LED structures used today, namely nitride LEDs on GaN substrates, on patterned sapphire substrates and flip chip nitride LEDs. We use ray tracing simulations of LEDs to show how the various extraction schemes
C. Lalau Keraly +3 more
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We describe simulations of the light extraction efficiency (LEE) as a function of the major materials parameters and geometries in the three main LED structures used today, namely nitride LEDs on GaN substrates, on patterned sapphire substrates and flip chip nitride LEDs. We use ray tracing simulations of LEDs to show how the various extraction schemes
C. Lalau Keraly +3 more
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The Light Extraction Efficiency for DUV LEDs
2019DUV LEDs have very low light extraction efficiency (LEE), which is caused by the unique optical polarization and the optically absorptive semiconductor and metal layers. This chapter reviews and analyzes the approaches that have ever been used to improve the LEE.
Zi-Hui Zhang +3 more
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Light Extraction Efficiency of the LED with Guide Layers
Japanese Journal of Applied Physics, 1976An LED with guide layers, which is similar to the DH-structured diode, is devised. By calculating the efficiency ee of extracting the light from the active region to the diode facet within a certain solid angle, we have obtained the following conclusions: (1) If the absorption coefficient αa of the active region is large, ee for the LED with guide ...
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Optics Letters, 2015
An optical scattering layer composed of randomly dispersed nanopatterns (RDNPs) was introduced in an organic light-emitting diode (OLED) to increase the out-coupling efficiency. An RDNP was fabricated by direct printing on a glass substrate. Owing to its low haze and high transmittance, the RDNP acted as a light extraction layer in the OLED.
Yang Doo, Kim +6 more
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An optical scattering layer composed of randomly dispersed nanopatterns (RDNPs) was introduced in an organic light-emitting diode (OLED) to increase the out-coupling efficiency. An RDNP was fabricated by direct printing on a glass substrate. Owing to its low haze and high transmittance, the RDNP acted as a light extraction layer in the OLED.
Yang Doo, Kim +6 more
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A route to improved extraction efficiency of light-emitting diodes
Applied Physics Letters, 2010The electroluminescence from an n-MgZnO/i-ZnO/MgO/p-GaN asymmetric double heterojunction has been demonstrated. With the injection of electrons from n-MgZnO and holes from p-GaN, an intense ultraviolet emission coming from the ZnO active layer was observed.
H. Zhu +7 more
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On the Light Extraction Efficiency for III-Nitride-Based Light-Emitting Diodes
2019Considering the large contrast of the refractive index between the air and the III-nitride semiconductor layer, the external quantum efficiency for III-nitride-based light-emitting diodes is strongly influenced by the light extraction efficiency. This chapter reviews the current status for the technologies that have been adopted thus far to improve the
Zi-Hui Zhang +4 more
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