Results 21 to 30 of about 8,336,119 (285)

Model for Light Extraction Efficiency of MicroLEDs

open access: yes, 2023
For the first time, a semi-analytic formulation of the light extraction efficiency (LEE) of MicroLEDs is presented. The model is based on light tracing equations and delineates the contributions of reflection on the sidewalls of the MicroLEDs to enhance LEE compared to large LED.
Khaled Ahmed (14320710), Khaled Ahmed
openaire   +2 more sources

New nanostructure perovskite-based light-emitting diode with superior light extraction efficiency enhancement [PDF]

open access: yesScientific Reports
The external quantum efficiency (EQE) of a perovskite-based light-emitting diode (PELED) is a key indicator, comprising the internal quantum efficiency (IQE) and light extraction efficiency (LEE).
Saeed Rahimi   +2 more
doaj   +2 more sources

Ultra-High Light Extraction Efficiency and Ultra-Thin Mini-LED Solution by Freeform Surface Chip Scale Package Array

open access: yesCrystals, 2019
In this study, we present a novel type of package, freeform-designed chip scale package (FDCSP), which has ultra-high light extraction efficiency and bat-wing light field.
Che-Hsuan Huang   +9 more
doaj   +2 more sources

Study on Modulation Bandwidth and Light Extraction Efficiency of Flip-Chip Light-Emitting Diode with Photonic Crystals. [PDF]

open access: yesMicromachines (Basel), 2019
In this study, the photonic crystal structure is employed to increase both the light extraction efficiency and the modulation bandwidth of flip-chip GaN-based light-emitting diodes (LEDs).
Wang H, Zhong M, Tan L, Shi W, Zhou Q.
europepmc   +2 more sources

High extraction efficiency ingan micro-ring light emitting diodes [PDF]

open access: yes, 2003
Light-emitting diodes (LEDs) based on an interconnected array of GaN/InGaN micro-ring elements have been demonstrated. The devices have electrical characteristics similar to those of conventional broad-area devices.
Choi, H.W.   +3 more
core   +4 more sources

Overcoming the Fundamental Limitation in Light-Extraction Efficiency of Deep-Ultraviolet Light-Emitting Diodes by Utilizing Transverse-Magnetic-Dominant Emission [PDF]

open access: yes, 2019
While the demand for deep ultraviolet (DUV) light sources is rapidly growing, the efficiency of current AlGaN-based DUV light-emitting diodes (LEDs) remains very low due to their fundamentally limited light-extraction efficiency (LEE), calling for a ...
E. Fred Schubert   +8 more
core   +2 more sources

High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals [PDF]

open access: yes, 2013
This letter reports on high extraction efficiency light-emitting diodes (LEDs) based on embedded two-dimensional air-gap photonic crystals (PhCs). High refractive index contrast provided by the air gaps along with high interaction of the embedded PhCs ...
Matioli, Elison   +7 more
core   +2 more sources

Thin-film photonic crystal LEDs with enhanced directionality [PDF]

open access: yes, 2009
The use of photonic crystals for light extraction from light-emitting diodes (LEDs) gives the possibility to shape the farfield emission pattern. This is of particular interest for étendue-limited LED applications that require a more directional ...
Bergenek, Krister   +8 more
core   +1 more source

Effects of Inclined Sidewall Structure With Bottom Metal Air Cavity on the Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

open access: yesIEEE Photonics Journal, 2017
An inclined sidewall scattering structure with air cavity characterized by a metal bottom and flat parallel top (Bottom_metal) is proposed to enhance the light extraction efficiency (LEE) for AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs).
Yonghui Zhang   +6 more
doaj   +1 more source

Numerical analysis of light extraction enhancement of GaN-based thin-film flip-chip light-emitting diodes with high-refractive-index buckling nanostructures

open access: yesResults in Physics, 2018
In this work, the light extraction efficiency enhancement of GaN-based thin-film flip-chip (TFFC) light-emitting diodes (LEDs) with high-refractive-index (TiO2) buckling nanostructures was studied using the three-dimensional finite difference time domain
Qing-Yang Yue   +3 more
doaj   +1 more source

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