Results 201 to 210 of about 1,228,728 (251)

High light output-power single-longitudinal-mode semiconductor laser diodes

IEEE Transactions on Electron Devices, 1985
Issues related to realizing high light output-power single-longitudinal-mode InGaAsP/InP DFB LD's have been studied experimentally and theoretically. Asymmetry in the reflections as the front and rear facets of DFB cavity has been found to result in enhanced single-longitudinal-mode selectivity and higher light output power from the front facet. Single-
K. Kobayashi, I. Mito
openaire   +1 more source

High‐Output‐Power Ultraviolet Light Source from Quasi‐2D GaN Quantum Structure

Advanced Materials, 2016
Quasi-2D GaN layers inserted in an AlGaN matrix are proposed as a novel active region to develop a high-output-power UV light source. Such a structure is successfully achieved by precise control in molecular beam epitaxy and shows an amazing output power of ≈160 mW at 285 nm with a pulsed electron-beam excitation.
Xin, Rong, Xinqiang, Wang, Sergey V, Ivanov, Xinhe, Jiang, Guang, Chen, Ping, Wang, Weiying, Wang, Chenguang, He, Tao, Wang, Tobias, Schulz, Martin, Albrecht, Valentin N, Jmerik, Alexey A, Toropov, Viacheslav V, Ratnikov, Vladimir I, Kozlovsky, Victor P, Martovitsky, Peng, Jin, Fujun, Xu, Xuelin, Yang, Zhixin, Qin, Weikun, Ge, Junjie, Shi, Bo, Shen   +22 more
openaire   +2 more sources

Enhancement of Light Output Power from LEDs Based on Monolayer Colloidal Crystal

Small, 2014
One of the major challenges for the application of GaN‐based light emitting diodes (LEDs) in solid‐state lighting lies in the low light output power (LOP). Embedding nanostructures in LEDs has attracted considerable interest because they may improve the LOP of GaN‐based LEDs efficiently.
Chong, Geng, Tongbo, Wei, Xiaoqing, Wang, Dezhong, Shen, Zhibiao, Hao, Qingfeng, Yan   +5 more
openaire   +2 more sources

Enhanced Light Output Power of InGaN/GaN Light Emitting Diodes with Embedded Air Prisms

Electrochemical and Solid-State Letters, 2010
We report characteristics of the InGaN/GaN light emitting diodes (LEDs) grown by selective metallorganic chemical vapor deposition with embedded air prisms (EAPs) via a wet etching process. At first, aqueous KOH solution, an etchant, removed the SiO 2 mask pattern to facilitate a subsequent etching through N-face GaN to achieve crystallographically ...
Hyung Gu Kim, Hee Yun Kim, Hyun Kyu Kim, Jae Hyoung Ryu, Ji Hye Kang, Nam Han, Periyayya Uthirakumar, Chang-Hee Hong   +7 more
openaire   +1 more source

Improved light output power of GaN-based light-emitting diodes by using Ag grids

Microelectronic Engineering, 2012
We investigate the effect of 1-(1-D) and 2-dimensional (2-D) patterned Ag grids combined with Al-doped ZnO contacts on the electrical and optical properties of GaN-based light-emitting diodes (LEDs). The ratio of the grid width to the gap between the grids varies from 2.8 for the 1-D to 38.7 for the 2-D grids.
Se-Yeon Jung, Joon-Ho Oh, Tae-Yeon Seong
openaire   +1 more source

Enhanced Light Output Power in InGaN Light-Emitting Diodes by Fabricating Inclined Undercut Structure

Journal of The Electrochemical Society, 2006
The InGaN-based light-emitting diode (LED) with an inclined undercut structure is fabricated through the photoelectrochemical two-step process to increase light extraction efficiency. In the first step the sidewall-undercut structure at the p-type and n-type GaN interface is created by selective wet oxidation on an n-type GaN surface in pure H 2 O ...
Chia-Feng Lin, Zhong-Jie Yang, Bing-Hua Chin, Jing-Hui Zheng, Jing-Jie Dai, Bing-Cheng Shieh, Cheng-Ching Chang   +6 more
openaire   +1 more source

Blue resonant-cavity light-emitting diode with half milliwatt output power

SPIE Proceedings, 2016
GaN-based resonant-cavity light-emitting diode (RCLED) has a circular output beam with superior directionality than conventional LED and has power scalability by using two-dimensional-array layout. In this work, blue RCLEDs with a top reflector of approximately 50% reflectance were fabricated and characterized.
Pinghui S. Yeh, Chi-Chieh Chang, Yu-Ting Chen, Da-Wei Lin, Chun Chia Wu, Jhao Hang He, Hao-Chung Kuo   +6 more
openaire   +1 more source

Output power enhancement of light-emitting diodes with defect passivation layer

SPIE Proceedings, 2010
We demonstrate high efficiency blue light emitting diodes with defect passivation layers. The defect passivation layers were formed by defect selective wet etching, SiO 2 deposition, and chemical mechanical polishing process. The process does not require photolithography patterning.
Ming-Hua Lo, Po-Min Tu, Yuh-Jen Cheng, Chao-Hsun Wang, Cheng-Wei Hung, Shih-Chieh Hsu, Hao-Chung Kuo, Hsiao-Wen Zan, Shing-Chung Wang, Chun-Yen Chang, Che-Ming Liu   +10 more
openaire   +1 more source

Nonlinear PI output power regulation in a light water reactor

Progress in Nuclear Energy, 2019
Abstract Robust nonlinear control of the load following operation has been attempted for a nuclear facility with a pressurized water reactor. A multi-linear model of the plant has been employed to contrive an appropriate proportional-integral (PI) controller further applied to the original nonlinear system.
openaire   +1 more source

Improved Light-Output Power of GaN LEDs by Selective Region Activation

IEEE Photonics Technology Letters, 2004
A novel selective high resistivity region (SHRR) is created under the p-pad metal electrode of a normal GaN light emitting diode. In conventional designs, light generated under the opaque p-pad metal electrode is absorbed or reflected by the contact and lost.
C.-C. Liu, Y.-H. Chen, M.-P. Houng, Y.-H. Wang, Y.-K. Su, W.-B. Chen, S.-M. Chen   +6 more
openaire   +1 more source