Watt-Class High-Output-Power 365 nm Ultraviolet Light-Emitting Diodes
Japanese Journal of Applied Physics, 2004Ultraviolet (UV) light-emitting diode (LED) epilayers were grown on low dislocation density (1×108/cm2) GaN templates with sapphire substrates. Then, the GaN templates and sapphire substrates were removed using laser-induced lift-off and polishing techniques.
Daisuke Morita +8 more
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Simple visible supercontinuum light source with true continuous-wave output power
Applied Physics Letters, 2012We present the concept and both the experimental and computational study of a simple supercontinuum light source emitting at temporally highly stable output powers. The principle of the light source is based on a standard pulsed supercontinuum source combined with fiber-based dispersive time-stretching.
Novotny, Steffen +5 more
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A Multi-Output Hybrid Divided Power Converter for LED Lighting Applications
2018 IEEE 19th Workshop on Control and Modeling for Power Electronics (COMPEL), 2018This paper introduces a novel single inductor multi-output LED driver. The converter is able to significantly reduce the area of passive components while maintaining high power processing efficiency by dividing power between a switched capacitor (SC) and a buck-boost converter and taking the output differentially from the two outputs. The volume of the
Tim McRae +4 more
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Superluminescent light emitting diodes of 100mW output power for pico-projection
2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEOPR), 2013A blue superluminescent LED (SLED) with power above 100mW was fabricated. These SLED shows promise for focus-free pico-projection due to reduced interference and improved image quality. We compared different straight and curved waveguide designs with and without tilted facets. Internal and mirror losses were determined by the Hakki-Paoli method.
U. T. Schwarz +4 more
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Radiometric and spectroradiometric comparison of power outputs of five visible light-curing units
Journal of Dentistry, 1993The spectral distributions of the radiation emitted by five visible range curing lights were measured spectroradiometrically. The light intensities in specific wavelength bands were evaluated by graphical integration. The results were then compared with the instantaneous readings of power density of all of the units as measured with a commercial curing
S Y, Lee +3 more
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We review the recent developments to enhance the external quantum efficiency (EQE) in GaN based vertical light-emitting diodes (V-LEDs). The controlling of side-wall angle by SiO2 nanosphere lithography significantly improved the light extraction efficiency (LEE) of V-LEDs; this result is 6% higher than the photo chemical etching (PCE) method, which is
Yang Hee Song +3 more
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Improved light output power of GaN-based flip-chip light-emitting diode through SiO2 cones
Electronic Materials Letters, 2012We formed SiO2 cones on p-type GaN by using a simple wet-etching process and investigated the effects of the size and the coverage of the SiO2 cones on the output power performance of GaN-based light-emitting diodes (LEDs). The diameter of two different size SiO2 cones and the distance between the cones are in a range of 17.3–21.1 µm and 32.7–33.9 µm ...
Se-Yeon Jung, Tae-Yeon Seong
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Photoelectrochemical oxidation enhances optical output power in GaN-based light emitting diodes
(CLEO). Conference on Lasers and Electro-Optics, 2005., 2005Using the photoelectrochemical (PEC) oxidation process, the output power was increased by about 40%, caused by a reduced index reflectance from the GaN material to the outside air, and an increased roughness in the oxidized sidewalls. In addition, the enhanced output power was decreased when the PEC oxidation time was increased. These PEC treated InGaN/
null Chia-Feng Lin +2 more
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Slow light transmission in a photonic crystal power splitter with parallel outputs
Photonics and Nanostructures - Fundamentals and Applications, 2014Abstract In this paper, we investigate coupling of light to slow modes in a photonic crystal power splitter composed of a Y-junction and two 60° bends. First, a combination of two cascaded bends which is commonly used in integrated photonic crystal circuits is studied in slow light frequency regime.
Maliheh Khatibi Moghaddam +2 more
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High-output-power deep ultraviolet light-emitting diode assembly using direct bonding
Applied Physics Express, 2016Abstract We fabricated high-output-power 255 and 280 nm light-emitting diodes (LEDs) using direct bonding. The LED chips were bonded to sapphire lenses at room temperature using either atomic diffusion bonding or surface-activated bonding.
Masatsugu Ichikawa +8 more
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