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Design of a Current-Source-Output Inductive Power Transfer LED Lighting System
IEEE Journal of Emerging and Selected Topics in Power Electronics, 2015Inductive power transfer (IPT) light-emitting diode (LED) lighting systems have many advantages in commercial, industrial, and domestic applications. Due to the large leakage inductance, primary and secondary capacitor compensations are necessary to improve the power transfer capability. To offer a direct current source output for LED driving, topology
null Xiaohui Qu +3 more
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Junction geometries to improve power output of incoherent light from GaAs diodes
1963 International Electron Devices Meeting, 1963Incoherent radiation is usually observed emanating from the p or n region of a wafer containing a p-n junction. In the region in which the radiative recombination occurs, the P/I ratio is 1.5 watts per ampere at 77° K for unity quantum efficiency. The ratio of the maximum power which may exit either the p or n surface to that generated within the ...
R.B. Liebert +3 more
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Journal of the Korean Physical Society, 2012
In this paper, we report the effect of p-type AlGaInN/GaN superlattices (SLs) as electron-blocking layers (EBLs) on the optical properties of vertical light-emitting diodes (VLEDs). Using p-AlGaInN/GaN SLs in VLEDs, we have achieved significant improvements in the output power and the external quantum efficiency (EQE) as compared to VLEDs using p ...
Su Jin Kim, Sung Hun Son, Tae Geun Kim
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In this paper, we report the effect of p-type AlGaInN/GaN superlattices (SLs) as electron-blocking layers (EBLs) on the optical properties of vertical light-emitting diodes (VLEDs). Using p-AlGaInN/GaN SLs in VLEDs, we have achieved significant improvements in the output power and the external quantum efficiency (EQE) as compared to VLEDs using p ...
Su Jin Kim, Sung Hun Son, Tae Geun Kim
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IEEE Electron Device Letters, 2009
The enhancement of light extraction from GaN-based light-emitting diodes (LEDs) with a double 12-fold photonic quasi-crystal (PQC) structure using nanoimprint lithography is presented. At a driving current of 20 mA on a transistor-outline-can package, the light output power of an LED with a nanohole patterned sapphire substrate (NHPSS) and an LED with ...
null Hung-Wen Huang +5 more
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The enhancement of light extraction from GaN-based light-emitting diodes (LEDs) with a double 12-fold photonic quasi-crystal (PQC) structure using nanoimprint lithography is presented. At a driving current of 20 mA on a transistor-outline-can package, the light output power of an LED with a nanohole patterned sapphire substrate (NHPSS) and an LED with ...
null Hung-Wen Huang +5 more
openaire +1 more source
Planning for post‐pandemic cancer care delivery: Recovery or opportunity for redesign?
Ca-A Cancer Journal for Clinicians, 2021Pelin Cinar +2 more
exaly
A roadmap for the commercialization of perovskite light emitters
Nature Reviews Materials, 2022, Richard Friend, Edward H Sargent
exaly

