Results 31 to 40 of about 20,651 (264)

Traction using a clip-with-line is a preferred method for trainees in performing esophageal endoscopic submucosal dissection: an animal model study

open access: yesTherapeutic Advances in Gastroenterology, 2017
Background: The optimal operative process of esophageal endoscopic submucosal dissection (ESD), especially for the beginners, is not established. In this study, the clip-with-line method, the tunneling method and the conventional method for esophageal ...
Peng Jin   +7 more
doaj   +1 more source

The PRIMA Thesaurus for Materials Science and Engineering

open access: yesAdvanced Engineering Materials, EarlyView.
The PRIMA Thesaurus is a structured vocabulary designed to improve how materials science data is described and shared. Developed with input from multiple experts, it enables clear documentation of research workflows, data exchange, and reuse across platforms.
Rossella Aversa   +8 more
wiley   +1 more source

A High-Performance InAs/GaSb Core-Shell Nanowire Line-Tunneling TFET: An Atomistic Mode-Space NEGF Study

open access: yesIEEE Journal of the Electron Devices Society, 2019
Using a tight-binding mode-space NEGF technique, we explore the essential physics, design and performance potential of the III-V core-shell (CS) nanowire (NW) heterojunction tunneling field-effect transistor (TFET).
Aryan Afzalian   +4 more
doaj   +1 more source

Hybrid Metal–Carbon Ink for Printed Stretchable Temperature Sensors

open access: yesAdvanced Engineering Materials, EarlyView.
We prepare conductive inks for temperature sensing with silver flakes and carbon or graphite flakes in a silicone elastomer matrix. Silver dominates the temperature‐dependent conductivity, while the carbon filler network ensures the stability of the conductive pathways and retains function under strain.
Makara Lay   +3 more
wiley   +1 more source

Research and implementation of eco-grouting material derived from shield tunneling muck

open access: yesCase Studies in Construction Materials
During shield tunneling construction, a significant amount of waste muck is generated, presenting challenges due to its high volume, complex composition, and difficult disposal.
Wei Wang   +6 more
doaj   +1 more source

One through the other tunneling of the “kink” – Type solitons in domain wall of ferromagnetic film

open access: yesResults in Physics, 2019
The sub-barrier quantum passing through one another of length segments of two nanosized magnetic solitons (kink – type) in the form of unipolar vertical Bloch lines is considered.
A.B. Shevchenko, M.Yu. Barabash
doaj   +1 more source

A Novel Approach for Risk Assessment of Building Damage via Metro Tunnel Construction

open access: yesAdvances in Civil Engineering, 2022
The impact of shield construction on the surrounding buildings involves numerous factors, and the factors are uncertain and ambiguous, which have a great impact on the progress and safety of the project.
Hai-Lin Wang   +3 more
doaj   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

open access: yesAdvanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone   +11 more
wiley   +1 more source

TCAD Simulation Study of ESD Behavior of InGaAs/InP Heterojunction Tunnel FETs

open access: yesCrystals, 2020
For the first time, we investigated the electrostatic discharge (ESD) behavior of an InGaAs/InP heterojunction tunneling field effect transistor (HTFET). The device structure in this study has a high on-state current without extra process steps.
Zhihua Zhu   +5 more
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

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