Results 41 to 50 of about 4,253,055 (306)

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

TBM Selection Optimization and Tunneling Parameter Control in Complex Offshore Strata for Urban Rail Transit

Chengshi guidao jiaotong yanjiu
[Objective] In order to improve the formation adaptability of the tunnel boring machine (shorten as TBM) and solve the problem of TBM selection for the west extension section of Qingdao Metro Line 2 (hereinafter referred to as Line 2) in the complex ...
Jian SHI, Weijing LIU, Shilin ZHANG, Suozai LI, Desen KONG   +4 more
doaj   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

Advances in Sustainable and Wearable Textile Based Soft Robotics

Advanced Functional Materials, EarlyView.
This Review examines advances in wearable textile‐based soft robotics, focusing on sustainable materials, integrated sensing, and scalable actuation. It discusses manufacturing and system integration across healthcare, assistive robotics, prosthetics, and human–machine interfaces, and highlights key challenges in circular design, including life‐cycle ...
Zahir Abbas, Marzia Dulal, Sophia K. Novoselov, Victoria K. Novoselov, Kostya S. Novoselov, Shaila Afroj, Nazmul Karim   +6 more
wiley   +1 more source

Influence Factors of Strata Deformation Response Induced by Shield Tunneling in Thick Silty Clay Layer

Chengshi guidao jiaotong yanjiu
[Objective] In thick silty clay layers, the disturbance caused by shield tunneling is affected by multiple factors such as strata conditions and construction parameters.
LI Liang, LU Yong, FAN Cunxin, GUO Bing, ZHU Wenxuan   +4 more
doaj   +1 more source

Integration of tunneling magnetoresistive sensors for high resolutive magnetic particle detection [PDF]

, 2009
Albon C. Integration of tunneling magnetoresistive sensors for high resolutive magnetic particle detection. Bielefeld (Germany): Bielefeld University; 2009.The development of nanotechnology pushes the limits of biomedicine in regions where the size of ...
Albon, Camelia
core  

Functionalizing Micro‐to‐Mesoscopic Electrode Architectures for Regulating Electron Transfer Behaviors in Electrocatalysis

Advanced Functional Materials, EarlyView.
A systematic review is conducted to assess the influence of electrode architecture across micro‐ to mesoscopic length scales on electron‐transfer pathways in electrocatalysis. We discuss the structure‐activity relationships in electrocatalytic applications, including resource recovery and environmental remediation, and provide cost‐effective, efficient
Manshu Zhao, Jiaojiao Zhang, Shideng Yuan, Xinmeng Yu, Keming Wan, Xiaoguang Duan, Zhining Wang   +6 more
wiley   +1 more source

Binary‐to‐Ternary Reconfigurable Transistors Using Plasma‐Assisted MoS2

Advanced Functional Materials, EarlyView.
A binary‐to‐ternary reconfigurable transistor is demonstrated using a dual‐gated molybdenum disulfide homojunction with localized O2 plasma treatment. The device exhibits on/intermediate and intermediate/off current ratios of 102 and 104, respectively, and the intermediate state is electrically tunable in the ternary mode.
Yeonghyeon Ko, Jungi Song, Minsu Kim, Yongwook Seok, Seongje Moon, Kenji Watanabe, Takashi Taniguchi, Kayoung Lee   +7 more
wiley   +1 more source

Modeling of direct tunneling gate current and gate capacitance in deep submicron MOSFETs with high-K dielectric.

, 2002
Scaling down of MOS device dimensions is accompanied by a decrease in gate-oxide thickness and an increase in substrate doping density. When gate oxide thickness becomes less than 2 nm, a substantial current follows through gate-oxide due to direct ...
Hakim, M. M. A.
core   +1 more source

Peck Formula Modification of and Engineering Application in Small Radius Curve Shield Tunneling Construction

Chengshi guidao jiaotong yanjiu
Objective In the urban rail transit line planning, curved tunnels, and even small radius curved tunnels are often chosen due to influencing factors such as building foundations, underground pipelines, and weak soil layers.
Linghang YANG
doaj   +1 more source