Results 91 to 100 of about 2,986,448 (239)

Quasi-linear magnetoresistance and paramagnetic singularity in hypervalent bismuthide

open access: yesnpj Quantum Materials
Materials featuring hypervalent bismuth motifs have generated immense interest due to their extraordinary electronic structure and exotic quantum transport.
Zhongchen Xu   +9 more
doaj   +1 more source

Grazing Incidence X-ray Scattering from Magnetic Thin Films and Nanostructures [PDF]

open access: yes, 2009
Grazing incidence scattering of synchrotron x-rays has been used to characterize the structure of magnetic thin films and periodic nanostructures. The combined metal and metal oxide films have been chosen to clarify the effects of growth processing ...
Eastwood, David Samuel   +1 more
core  

Multiferroic‐Centric Materials and Systems Engineering for Battery Applications: An Insight Into Mechanisms, Strategies, and Characterizations

open access: yesAdvanced Science, EarlyView.
Multiferroic order parameters – polarization, magnetization, and ferroelastic strain – are positioned as dynamic design variables for batteries. Their mechanistic roles, practical tuning through fabrication and external fields, and ferroic‐resolved characterization routes are unified into a closed‐loop framework, revealing how coupled ferroic responses
Jiaqi Su   +13 more
wiley   +1 more source

Large, linear c-axis magnetoresistance in YBa2Cu3O7−δ

open access: yes, 2000
Underdoped YBa2Cu3O7-δ single crystals exhibit a large, positive c-axis magnetoresistance that is strikingly linear over a wide magnetic field range up to 60 T.
Balakirev, F. F.   +13 more
core   +1 more source

Sliding Ferroelectricity Driven Spin‐Layertronics in Altermagnetic Multilayers

open access: yesAdvanced Science, EarlyView.
Integrating sliding ferroelectricity with altermagnetism enables nonvolatile electrical control of spin and layer degrees of freedom. In bilayer CuF2, interlayer translation reverses layer‐locked spin‐split bands, establishing a multifunctional “spin‐layertronic” platform.
Rui Peng   +5 more
wiley   +1 more source

Extreme magnetoresistance at high-mobility oxide heterointerfaces with dynamic defect tunability

open access: yesNature Communications
Magnetic field-induced changes in the electrical resistance of materials reveal insights into the fundamental properties governing their electronic and magnetic behavior. Various classes of magnetoresistance have been realized, including giant, colossal,
D. V. Christensen   +7 more
doaj   +1 more source

Terahertz‐Nanoscale Visualization of the Microscopic Spin‐Charge Architecture of Colossal Magnetoresistive Switching

open access: yesAdvanced Science, EarlyView.
This study employs cryogenic magneto‐terahertz nanoscopy to reveal the real‐space electrodynamics of the colossal magnetoresistance transition. By capturing the terahertz electrodynamic evolution of field‐driven spin switching, the work unveils the dissipative dynamics of emergent metallic states, providing a high‐frequency view of coupled spin‐charge ...
Samuel Haeuser   +6 more
wiley   +1 more source

Efficient Current‐Driven Perpendicular Magnetization Switching Through the Synergy of the Orbital and Spin Hall Effects

open access: yesAdvanced Science, EarlyView.
NiNb alloys enable efficient charge‐to‐spin conversion by combining the spin Hall effect of nickel with the orbital Hall effect of niobium. Composition tuning yields spin‐torque efficiencies of −1.4 to −1.7 and a non‐monotonic efficiency‐resistivity relationship, revealing orbital‐spin synergy beyond conventional spin Hall materials and offering a ...
Chuangwen Wu   +16 more
wiley   +1 more source

INCREASE OF THE LINEAR MAGNETORESISTANCE OF INDIUM BY ARTIFICAL VOIDS

open access: yes, 1978
L'augmentation de la magnéto-résistance de l'indium due à des cavités artificielles a été étudiée. La magnéto-résistance linéaire se trouve en effet beaucoup accrue par les cavités, en accord avec les calculs théoriques classiques.The increase of the ...
C.J. Beers   +3 more
core   +1 more source

Voltage‐Reconfigurable Magneto‐Ionic Nanolayers in Dot Arrays for Probabilistic, Materials‐Engineered Security Primitives

open access: yesAdvanced Science, EarlyView.
A magneto‐ionic security‐by‐materials‐design strategy exploits voltage‐driven N3– migration in selectively contacted FeCoN dots, creating reconfigurable sub‐15 nm ferromagnetic sublayers with deterministic and/or probabilistic (single‐domain↔vortex) states, voltage‐tunable probabilities and fully stochastic orientation/chirality.
Irena Spasojevic   +4 more
wiley   +1 more source

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