Results 91 to 100 of about 25,244 (222)

Magneto-transport studies on Bi2Te2+xSe1–x (x = 0.05 and 0.10) topological insulators

AIP Advances, 2016
Bi2Te2Se is one of the most promising three dimensional topological insulators, for the study of surface states. In this work, we report the results of transport and magneto-transport behavior of Bi2Te2+xSe1–x (x=0.05 and 0.10) single crystals grown ...
Bushra Irfan, Ratnamala Chatterjee
doaj   +1 more source

Magnetoresistance in semiconductor structures with hopping conductivity: effects of random potential and generalization for the case of acceptor states

, 2010
We reconsider the theory of magnetoresistance in hopping semiconductors. First, we have shown that the random potential of the background impurities affects significantly preexponential factor of the tunneling amplitude which becomes to be a short-range ...
A. B. Aleinikov, A. El kaaouachi, A. El kaaouachi, A. V. Shumilin, B. I. Shklovskii, B. I. Shklovskii, B. Spivak, E. Sobko, I. M. Lifshitz, N. S. Averkiev, N. V. Agrinskaya, N. V. Agrinskaya, V. I. Kozub, V. L. Nguyen, V. L. Nguyen   +14 more
core   +1 more source

Uranium Doped Gallium Nitride Epitaxial Thin Films

Advanced Electronic Materials, EarlyView.
Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix, Sabin Regmi, Aaron G. Penders, Sohail Shah, Kevin D. Vallejo, Volodymyr B. Buturlim, Belief Rifore, Krzysztof Gofryk, Mukesh Bachhav, Nicholas J. Borys, Brelon J. May   +10 more
wiley   +1 more source

Quasi-linear magnetoresistance and paramagnetic singularity in hypervalent bismuthide

npj Quantum Materials
Materials featuring hypervalent bismuth motifs have generated immense interest due to their extraordinary electronic structure and exotic quantum transport.
Zhongchen Xu, Yi Yan, Zhihao Liu, Jie Pang, Guohao Dong, Xiutong Deng, Shengnan Zhang, Xianmin Zhang, Youguo Shi, Quansheng Wu   +9 more
doaj   +1 more source

Emergence of Double‐Dome Superconductivity in the Pressurized Dirac Semimetal BaMg2Bi2

Advanced Electronic Materials, EarlyView.
ABSTRACT Dirac semimetal BaMg2${\rm BaMg}_{2}$Bi2${\rm Bi}_{2}$ is reported to be a unique topological material that manifests surface superconductivity that coexists with bulk band topology at ambient pressure. Here, we present a comprehensive investigation of high‐pressure superconducting properties in BaMg2${\rm BaMg}_{2}$Bi2${\rm Bi}_{2}$ single ...
Qi Wang, Juefei Wu, Cuiying Pei, Yi Zhao, Yiyan Wang, Yanpeng Qi   +5 more
wiley   +1 more source

Observation of linear-polarization-sensitivity in the microwave-radiation-induced magnetoresistance oscillations

, 2011
In the quasi two-dimensional GaAs/AlGaAs system, we investigate the effect of rotating \textit{in-situ} the electric field of linearly polarized microwaves relative to the current, on the microwave-radiation-induced magneto-resistance oscillations.
Mani, R. G., Ramanayaka, A. N., Wegscheider, W.   +2 more
core   +1 more source

Topological Materials and Related Applications

Advanced Electronic Materials, EarlyView.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti, Roberto Mantovan, Emanuele Longo, Harold J. W. Zandvliet, Pantelis Bampoulis, Yu Pan, Fan Li, Xia Wang, Payton Downey, Alessandro Molle   +9 more
wiley   +1 more source

Extreme magnetoresistance at high-mobility oxide heterointerfaces with dynamic defect tunability

Nature Communications
Magnetic field-induced changes in the electrical resistance of materials reveal insights into the fundamental properties governing their electronic and magnetic behavior. Various classes of magnetoresistance have been realized, including giant, colossal,
D. V. Christensen, T. S. Steegemans, T. D. Pomar, Y. Z. Chen, A. Smith, V. N. Strocov, B. Kalisky, N. Pryds   +7 more
doaj   +1 more source

Transversal magnetoresistance in Weyl semimetals

, 2015
We explore theoretically the magnetoresistvity of three-dimensional Weyl and Dirac semimetals in transversal magnetic fields within two alternative models of disorder: (i) short-range impurities and (ii) charged (Coulomb) impurities.
Gornyi, I. V., Klier, J., Mirlin, A. D.
core   +1 more source

Electrically and Magnetically Tunable Charge–Density–Wave Transport in Quasi‐2D h‐BN/1T‐TaS2 Field Effect Devices

Advanced Electronic Materials, EarlyView.
Perpendicular electric and magnetic fields are used to control charge‐density‐wave (CDW) domain dynamics in quasi‐two‐dimensional h‐BN/1T‐TaS2 field‐effect devices. Electrical gating produces a non‐monotonic modulation of the CDW depinning threshold — behavior distinct from quasi‐one‐dimensional CDW systems.
Jonas O. Brown, Maedeh Taheri, Nicholas R. Sesing, Tina T. Salguero, Alexander A. Balandin   +4 more
wiley   +1 more source