Results 101 to 110 of about 3,968 (226)

Field‐Frustrated Cooperative Distortions: Suppressing Jahn‐Teller Ordering via Microwave Annealing

open access: yesAdvanced Science, EarlyView.
Microwave annealing decouples local Jahn‐Teller distortions from long‐range cooperative ordering in CuFe2O4, stabilizing a metastable cubic phase that remains locally distorted yet globally symmetry‐frustrated. Synchrotron XRD, PDF, XPS, and in situ thermal cycling reveal how non‐equilibrium MW‐phonon interactions suppress cooperative orbital‐lattice ...
Daryoosh Vashaee, Kelvin Dsouza
wiley   +1 more source

Quadratic to linear magnetoresistance tuning in TmB 4 [PDF]

open access: yes, 2019
The change of a material's electrical resistance (R) in response to an external magnetic field (B) provides subtle information for the characterization of its electronic properties and has found applications in sensor and storage related technologies. In
Sunku, Sai   +15 more
core   +2 more sources

Multiferroic‐Centric Materials and Systems Engineering for Battery Applications: An Insight Into Mechanisms, Strategies, and Characterizations

open access: yesAdvanced Science, EarlyView.
Multiferroic order parameters – polarization, magnetization, and ferroelastic strain – are positioned as dynamic design variables for batteries. Their mechanistic roles, practical tuning through fabrication and external fields, and ferroic‐resolved characterization routes are unified into a closed‐loop framework, revealing how coupled ferroic responses
Jiaqi Su   +13 more
wiley   +1 more source

Thermal magnetoresistance of potassium [PDF]

open access: yes, 1988
It has recently been shown that an inhomogeneous, anisotropic Hall coefficient, arising from a charge-density-wave domain structure, explains the nonsaturating electrical magnetoresistance of potassium.
Huberman, M. L.
core   +1 more source

Extreme magnetoresistance at high-mobility oxide heterointerfaces with dynamic defect tunability

open access: yesNature Communications
Magnetic field-induced changes in the electrical resistance of materials reveal insights into the fundamental properties governing their electronic and magnetic behavior. Various classes of magnetoresistance have been realized, including giant, colossal,
D. V. Christensen   +7 more
doaj   +1 more source

Sliding Ferroelectricity Driven Spin‐Layertronics in Altermagnetic Multilayers

open access: yesAdvanced Science, EarlyView.
Integrating sliding ferroelectricity with altermagnetism enables nonvolatile electrical control of spin and layer degrees of freedom. In bilayer CuF2, interlayer translation reverses layer‐locked spin‐split bands, establishing a multifunctional “spin‐layertronic” platform.
Rui Peng   +5 more
wiley   +1 more source

Possible origin of linear magnetoresistance: Observation of Dirac surface states in layered PtBi2 [PDF]

open access: yes, 2018
The nonmagnetic compounds showing extremely large magnetoresistance are attracting a great deal of research interest due to their potential applications in the field of spintronics.
Fedorov, A.V.   +32 more
core   +1 more source

Machine‐Learning‐Enhanced Printed Vertical Magnetoresistive Sensors for Transparent, Flexible, Multimodal Interactive Magnetoelectronics

open access: yesAdvanced Science, EarlyView.
This study presents printed magnetoresistive sensors with a vertically aligned architecture that enables high optical transparency and mechanical flexibility. By integrating deep learning for the analysis of complex spatiotemporal signal patterns, the system further achieves intelligent multimodal interaction capabilities.
Rui Xu   +11 more
wiley   +1 more source

Anisotropic Fermi Surface and Quantum Limit Transport in High Mobility Three-Dimensional Dirac Semimetal Cd_{3}As_{2}

open access: yesPhysical Review X, 2015
Three-dimensional topological Dirac semimetals have a linear dispersion in 3D momentum space and are viewed as the 3D analogues of graphene. Here, we report angle-dependent magnetotransport on the newly revealed Cd_{3}As_{2} single crystals and clearly ...
Yanfei Zhao   +14 more
doaj   +1 more source

Unconventional Room‐Temperature Antisymmetric Magnetoresistance in van der Waals Fe3GaTe2/Pt Heterostructures

open access: yesAdvanced Science, EarlyView.
We investigated a special electrical phenomenon, known as antisymmetric magnetoresistance with four distinct resistance states, in 2D Fe3GaTe2/Pt devices at room temperature. By designing devices with two separated magnetic nanoflakes, we confirmed that the effect originates from spin–momentum locking rather than magnetic domain walls or interface ...
Yunwen Zhu   +10 more
wiley   +1 more source

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