Results 101 to 110 of about 2,921 (220)

Atomically Modulating Competing Exchange Interactions in Centrosymmetric Skyrmion Hosts GdRu2X2 (X = Si and Ge)

open access: yesAdvanced Electronic Materials, EarlyView.
Our work bridges the gap between skyrmion discovery and material design by demonstrating how atomic‐scale control of exchange interactions enables tunable skyrmion phase transitions in centrosymmetric magnetic metals. ABSTRACT Magnetic skyrmions are topologically protected spin states that hold promise for shaping the future of electronics.
Dasuni N. Rathnaweera   +9 more
wiley   +1 more source

Robustness of Half‐Metallicity and Spin‐Dependent Transport in Defective Co2HfSn and Co2ZrSn Heusler Alloys

open access: yesAdvanced Electronic Materials, EarlyView.
Point defects strongly influence the spin‐dependent electronic and transport properties of Co2HfSn and Co2ZrSn Heusler alloys. First‐principles calculations reveal that Co vacancies preserve half‐metallicity, while anti‐site and swap defects introduce minority‐spin states that reduce spin selectivity.
Alessandro Difalco   +5 more
wiley   +1 more source

Engineering a Correlated Narrow‐Gap Semiconductor: Effects of Ga Substitution in EuZn2P2

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT The effect of Ga substitution on the electronic, magnetic, and low‐energy responses of the Zintl phase EuZn2P2${\rm EuZn}_2 {\rm P}_2$ is investigated by electrical transport, electron spin resonance (ESR), and terahertz time‐domain spectroscopy (THz‐TDS). Incorporating Ga into EuZn2P2${\rm EuZn}_2 {\rm P}_2$ (EuZn1.8Ga0.2P2${\rm EuZn}_{1.8} {\
Mateus Dutra   +13 more
wiley   +1 more source

Fully Recyclable Printed Magnetoresistive Sensors Covering Broad Operational Ranges for Sustainable Interactive Electronics

open access: yesAdvanced Electronic Materials, EarlyView.
This work presents a sustainable printing and recycling strategy for magnetic sensors designed for IoT applications. By combining solvent‐orthogonal binders with tailored magnetic fillers, the sensors achieve tunable sensitivity across low to high magnetic field ranges.
Rui Xu   +6 more
wiley   +1 more source

Thickness‐Tuned Berry Curvature in vdW Epitaxial Cr3Te4 Ultrathin Films

open access: yesAdvanced Electronic Materials, EarlyView.
An investigation of thickness‐modulated Berry curvature in stoichiometric, high‐quality van der Waals epitaxial Cr3Te4 films. Surface and interface Te(CrTe2)‐termination enables Fermi level shifting via thickness variation, modulating Berry curvature near the band crossing point, thereby establishing termination engineering (may called Terminonics) as ...
Minghui Gu   +6 more
wiley   +1 more source

Combinatorial Survey of Structural Phase Distribution and Magnetism in Fe‐Ge‐Te Composition‐Spread Thin Film Libraries

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT Magnetic 2‐dimensional (2D) van der Waals (vdW) materials have garnered tremendous attention. The vdW ferromagnet Fe5Ge1Te2 has a Curie temperature Tc of ≈ 270 K, which is tailorable by tuning the stoichiometry and the Fe deficiency to reach room temperature.
Chih‐Yu Lee   +7 more
wiley   +1 more source

Selective Tuning of Perpendicular Magnetic Anisotropy and Dzyaloshinskii–Moriya Interaction in Heterostructures Compatible with Magnetic Tunnel Junctions

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT Chirally coupled magnetic tunnel junctions (MTJs) have been proposed as a route toward compact spin logic architectures. Micromagnetic simulations indeed show that chiral coupling between adjacent MTJs with perpendicular magnetic anisotropy (PMA) can be achieved through an in‐plane (IP) interconnection mediated by the Dzyaloshinskii–Moriya ...
Bob Vermeulen   +14 more
wiley   +1 more source

Non-conventional resonant behavior of an unconfined magnetic domain wall in a permalloy strip

open access: yesAPL Materials
The resonant dynamic of a magnetic domain wall in a permalloy microstrip has been investigated using an innovative experimental setup that enables a simultaneous measurement of the ferromagnetic resonance and the magnetoresistance.
Laura Fernández-García   +7 more
doaj   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

open access: yesAdvanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj   +2 more
wiley   +1 more source

Machine Learning‐Assisted Second‐Order Perturbation Theory for Chemical Potential Correction Toward Hubbard U Determination

open access: yesAdvanced Intelligent Discovery, EarlyView.
In this work, the Doubao large language model (LLM) is involved in the formula derivation processes for Hubbard U determination regarding the second‐order perturbations of the chemical potential. The core ML tool is optimized for physical domain knowledge, which is not limited to parameter prediction but rather serves as an interactive physical theory ...
Mingzi Sun   +8 more
wiley   +1 more source

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