Results 121 to 130 of about 25,124 (221)
Flexible Memory: Progress, Challenges, and Opportunities
Flexible memory technology is crucial for flexible electronics integration. This review covers its historical evolution, evaluates rigid systems, proposes a flexible memory framework based on multiple mechanisms, stresses material design's role, presents a coupling model for performance optimization, and points out future directions.
Ruizhi Yuan +5 more
wiley +1 more source
Half-metallic chromium dioxide (CrO2) is a promising candidate in magnetic random-access memory (MRAM) devices due to its nearly full spin polarization and ultralow Gilbert damping at room temperature. In this study, we succeeded in fabricating (110) and
Zhenhua Zhang +3 more
doaj +1 more source
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj +2 more
wiley +1 more source
In this work, the Doubao large language model (LLM) is involved in the formula derivation processes for Hubbard U determination regarding the second‐order perturbations of the chemical potential. The core ML tool is optimized for physical domain knowledge, which is not limited to parameter prediction but rather serves as an interactive physical theory ...
Mingzi Sun +8 more
wiley +1 more source
Feature Disentangling and Combination Implemented by Spin–Orbit Torque Magnetic Tunnel Junctions
Spin–orbit torque magnetic tunnel junctions (SOT‐MTJs) enable efficient feature disentangling and integration in image data. A proposed algorithm leverages SOT‐MTJs as true random number generators to disentangle and recombine features in real time, with experimental validation on emoji and facial datasets.
Xiaohan Li +15 more
wiley +1 more source
ON MAGNETIC SURFACE STATES INDUCED LINEAR MAGNETORESISTANCE
A new quantum mechanical model for explaining linear magnetoresistance of simple metals is proposed, based on the existence of internal magnetic surface states of electrons in the vicinity of dislocations, or other extended crystalline imperfections.
openaire +2 more sources
This study explores the epitaxial growth of high‐quality La‐doped BiFeO3 (BLFO) thin films at 550 °C using magnetron sputtering. The films exhibit good ferroelectric properties and low leakage current. A BLFO/CoFeB heterostructure is constructed, achieving an exchange bias field exceeding the coercive field at room temperature.
Zhiqin Zhou +10 more
wiley +1 more source
Fermion Loops, Linear Magnetoresistance, Linear In Temperature Resistance, and Bad Metals
Bad metals including the high $T_c$ superconductors display an exotic resistance that is linear in both temperature and magnetic field. This hallmark of strong correlations is poorly understood.
Sacksteder, Vincent
core
The investigation of the Kondo lattice system CeB6${\rm CeB}_6$ by highly surface sensitive techniques is hampered by difficulties in preparing well‐ordered, atomically flat surfaces. The richness of possible surface terminations and their impact on spectroscopic STM results are discussed.
M. Victoria Ale Crivillero +4 more
wiley +1 more source
Functional hybrid microbeads with electrical, magnetic, and/or optical responsiveness have emerged as versatile platforms for biotechnology. This review highlights recent advances in microfluidic technologies for producing such microbeads, with a focus on incorporating functional nanoparticles in microdroplet systems.
Bayinqiaoge +2 more
wiley +1 more source

