Results 151 to 160 of about 25,124 (221)

Néel Tensor Torque in Polycrystalline Antiferromagnets

open access: yesAdvanced Materials, Volume 38, Issue 9, 12 February 2026.
This work introduces a Néel tensor torque based on a rank‐two symmetric tensor capturing spin correlations in a polycrystalline antiferromagnet. It shows the Néel tensor can be shaped and reshaped through the spin‐orbit torque (SOT) technique, enabling field‐free SOT switching with a specific polarity of the adjacent ferromagnet. This discovery opens a
Chao‐Yao Yang   +4 more
wiley   +1 more source

Quantum Linear Magnetoresistance and Nontrivial Berry Phase in High‐Mobility Elemental Tellurium

open access: yesAdvanced Electronic Materials, 2023
Yi Ji   +9 more
doaj   +1 more source

Ferroelectrics Hybrids: Harnessing Multifunctionality of 2D Semiconductors in the Post‐Moore Era

open access: yesAdvanced Materials, Volume 38, Issue 7, 2 February 2026.
In this Review, the state of art of ferroelectric hybrid systems—combining ferroelectrics, 2D semiconductors, and molecular switches is presented—as next‐generation platforms for high‐density, multifunctional electronics. By discussing 2D FeFET applications, nanoscale material downscaling, M3D integration, and emerging ferroelectrics, it highlights ...
Haixin Qiu   +3 more
wiley   +1 more source

Intercalation‐Induced Phase Transitions in Ferroelectric α‐In2Se3

open access: yesAdvanced Science, Volume 13, Issue 9, 13 February 2026.
Using the electrolyte gating technique, the van der Waals ferroelectric semiconductor α‐In2Se3 undergoes a series of transitions from a ferroelectric semiconductor to a dirty metal and finally to a metal, accompanied by a structural transformation. Concurrently, the ferroelectric hysteresis window progressively narrows and eventually disappears with ...
Xin He   +12 more
wiley   +1 more source

Extreme Transverse Magnetoresistance in TiZn16

open access: yesAdvanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
Extreme magnetoresistance is observed in TiZn16, despite its metallic nature and a highly complex electronic structure with multiple electron and hole Fermi surfaces. High‐magnetic‐field measurements further revealed the presence of a cylindrical open orbit, which may help resolve the origin of the extreme magnetoresistance.
Aaron Chan   +11 more
wiley   +1 more source

Designing Memristive Materials for Artificial Dynamic Intelligence

open access: yesAdvanced Intelligent Discovery, Volume 2, Issue 1, February 2026.
Key characteristics required of memristors for realizing next‐generation computing, along with modeling approaches employed to analyze their underlying mechanisms. These modeling techniques span from the atomic scale to the array scale and cover temporal scales ranging from picoseconds to microseconds. Hardware architectures inspired by neural networks
Youngmin Kim, Ho Won Jang
wiley   +1 more source

Ultimate Charge Transport Regimes in Doping-Controlled Graphene Laminates: Phonon-Assisted Processes Revealed by the Linear Magnetoresistance. [PDF]

open access: yesACS Nano
Moazzami Gudarzi M   +13 more
europepmc   +1 more source

Large and Anisotropic Linear Magnetoresistance in Single Crystals of Black Phosphorus Arising From Mobility Fluctuations. [PDF]

open access: yesSci Rep, 2016
Hou Z   +11 more
europepmc   +1 more source

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