Néel Tensor Torque in Polycrystalline Antiferromagnets
This work introduces a Néel tensor torque based on a rank‐two symmetric tensor capturing spin correlations in a polycrystalline antiferromagnet. It shows the Néel tensor can be shaped and reshaped through the spin‐orbit torque (SOT) technique, enabling field‐free SOT switching with a specific polarity of the adjacent ferromagnet. This discovery opens a
Chao‐Yao Yang +4 more
wiley +1 more source
Quantum Linear Magnetoresistance and Nontrivial Berry Phase in High‐Mobility Elemental Tellurium
Yi Ji +9 more
doaj +1 more source
Ferroelectrics Hybrids: Harnessing Multifunctionality of 2D Semiconductors in the Post‐Moore Era
In this Review, the state of art of ferroelectric hybrid systems—combining ferroelectrics, 2D semiconductors, and molecular switches is presented—as next‐generation platforms for high‐density, multifunctional electronics. By discussing 2D FeFET applications, nanoscale material downscaling, M3D integration, and emerging ferroelectrics, it highlights ...
Haixin Qiu +3 more
wiley +1 more source
Intercalation‐Induced Phase Transitions in Ferroelectric α‐In2Se3
Using the electrolyte gating technique, the van der Waals ferroelectric semiconductor α‐In2Se3 undergoes a series of transitions from a ferroelectric semiconductor to a dirty metal and finally to a metal, accompanied by a structural transformation. Concurrently, the ferroelectric hysteresis window progressively narrows and eventually disappears with ...
Xin He +12 more
wiley +1 more source
Extreme Transverse Magnetoresistance in TiZn16
Extreme magnetoresistance is observed in TiZn16, despite its metallic nature and a highly complex electronic structure with multiple electron and hole Fermi surfaces. High‐magnetic‐field measurements further revealed the presence of a cylindrical open orbit, which may help resolve the origin of the extreme magnetoresistance.
Aaron Chan +11 more
wiley +1 more source
Designing Memristive Materials for Artificial Dynamic Intelligence
Key characteristics required of memristors for realizing next‐generation computing, along with modeling approaches employed to analyze their underlying mechanisms. These modeling techniques span from the atomic scale to the array scale and cover temporal scales ranging from picoseconds to microseconds. Hardware architectures inspired by neural networks
Youngmin Kim, Ho Won Jang
wiley +1 more source
Ultimate Charge Transport Regimes in Doping-Controlled Graphene Laminates: Phonon-Assisted Processes Revealed by the Linear Magnetoresistance. [PDF]
Moazzami Gudarzi M +13 more
europepmc +1 more source
Large and Anisotropic Linear Magnetoresistance in Single Crystals of Black Phosphorus Arising From Mobility Fluctuations. [PDF]
Hou Z +11 more
europepmc +1 more source
Interaction-induced magnetotransport in a 2D Dirac-Heavy hole hybrid band system. [PDF]
Gusev GM +4 more
europepmc +1 more source
Observation of Complete Orbital Two-Channel Kondo Effect in van der Waals Ferromagnet Fe3GaTe2. [PDF]
Bao C +7 more
europepmc +1 more source

