Pressure-Tunable Phase Transitions in Atomically Thin Chern Insulator MnBi<sub>2</sub>Te<sub>4</sub>. [PDF]
Márffy A +10 more
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Anisotropic Magnetoresistive Sensors: Dynamic Modeling and Characterization for Blade Tip-Timing Measurements. [PDF]
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The electronic structure of 1/1 ZnMgHf and its consequences for the electronic transport of the quasicrystal. [PDF]
Buganski I +5 more
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Observing and Suppressing Metallization in MoS<sub>2</sub> for Near-Ideal Spin Filtering. [PDF]
Huang TC +7 more
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Physics origin of universal unusual magnetoresistance. [PDF]
Zhu L, Liu Q, Wang X.
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A temperature-induced hysteretic behavior of resistivity and magnetoresistance of electrodeposited bismuth microbridges for X-ray transition-edge sensor absorbers. [PDF]
Quaranta O +10 more
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Enhancement of Superconductivity in WP via Oxide-Assisted Chemical Vapor Transport. [PDF]
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Topological protection in a Landau flat band at <i>v</i> = 7/11, a candidate filling factor for unconventional correlations. [PDF]
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Quantum Linear Magnetoresistance in Multilayer Epitaxial Graphene
Nano Letters, 2010We report the first observation of linear magnetoresistance (LMR) in multilayer epitaxial graphene grown on SiC. We show that multilayer epitaxial graphene exhibits large LMR from 2.2 K up to room temperature and that it can be best explained by a purely quantum mechanical model. We attribute the observation of LMR to inhomogeneities in the epitaxially
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Linear magnetoresistance of aluminum
Journal of Low Temperature Physics, 1974The transverse magnetoresistivity of pure single crystals of aluminum (RRR ∼22,000) has been studied at 4.2 K and in high magnetic fields using the hard helicon technique. The measured magnetoresistivity is separated into a saturating and a linearly increasing part, and the effect of deformation and quenching on the linear component is studied.
T. Amundsen, P. Jerstad
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