Results 151 to 160 of about 2,986,448 (239)

Large linear magnetoresistance in heavily-doped Nb:SrTiO₃ epitaxial thin films. [PDF]

Sci Rep, 2016
Jin H, Lee K, Baek SH, Kim JS, Cheong BK, Park BH, Yoon S, Suh BJ, Kim C, Seo SS, Lee S.   +10 more
europepmc   +1 more source

Computational and Experimental Thermoelectric Properties of YCuSb2

Advanced Sustainable Systems, Volume 10, Issue 10, October 2026.
The thermoelectric properties of the topological material YCuSb2 and its Te‐doped derivatives are investigated through a combination of experimental and computational methods. The materials exhibit low lattice thermal conductivity and electrical resistivity due to high carrier concentrations.
Noah Losier, Emily Doucet, Shivank A. Tyagi, Jubert Pasco, Clodualdo Aranas, Jan‐Hendrik Pöhls   +5 more
wiley   +1 more source

Quantum Linear Magnetoresistance and Nontrivial Berry Phase in High‐Mobility Elemental Tellurium

Advanced Electronic Materials, 2023
Yi Ji, Bin Wang, Chushan Li, Huakun Zuo, Enkui Yi, Gangjian Jin, Donghui Guo, Bing Shen, Dingyong Zhong, Huichao Wang   +9 more
doaj   +1 more source

Emergent 3D Fermiology and Magnetism in an Intercalated Van der Waals System

Advanced Science, Volume 13, Issue 55, 5 October 2026.
An emergent three‐dimensional electronic state is uncovered in an intercalated van der Waals system. A spin‐polarized intercalant‐host hybridized band crossing the Fermi level provides an itinerant channel for interlayer exchange, highlighting how electronic dispersion governs magnetic dimensionality.
Luigi Camerano, Emanuel A. Martínez, Victor Porée, Laura Martella, Dario Mastrippolito, Debora Pierucci, Franco D'Orazio, Polina M. Sheverdyaeva, Paolo Moras, Enrico Della Valle, Tianlun Yu, Moritz Hoesch, Craig M. Polley, Thiagarajan Balasubramanian, Alessandro Nicolaou, Luca Ottaviano, Vladimir N. Strocov, Gianni Profeta, Federico Bisti   +18 more
wiley   +1 more source

Theory of huge tunneling magnetoresistance in graphene

, 2008
We investigate theoretically the spin-independent tunneling magnetoresistance effect in a graphene monolayer modulated by two parallel ferromagnets deposited on a dielectric layer.
Chang K, kchang@red.semi.ac.cn, Zhai F, Zhai, F, Dalian Univ Technol, Sch Phys Optoelect Technol, Dalian 116024, Peoples R China. 电子邮箱地址: fengzhai@dlut.edu.cn   +3 more
core  

Engineering a Correlated Narrow‐Gap Semiconductor: Effects of Ga Substitution in EuZn2P2

Advanced Electronic Materials, Volume 12, Issue 19, 12 October 2026.
ABSTRACT The effect of Ga substitution on the electronic, magnetic, and low‐energy responses of the Zintl phase EuZn2P2${\rm EuZn}_2 {\rm P}_2$ is investigated by electrical transport, electron spin resonance (ESR), and terahertz time‐domain spectroscopy (THz‐TDS). Incorporating Ga into EuZn2P2${\rm EuZn}_2 {\rm P}_2$ (EuZn1.8Ga0.2P2${\rm EuZn}_{1.8} {\
Mateus Dutra, Esteban Marulanda, Gustavo G. Vasques, Jaime Ferreira Oliveira, Pedro C. Sabino, Rebeca Brigato Delgado, Leticie Mendonça‐Fereira, Adriano R. V. Benvenho, Elisa Baggio‐Saitovitch, Ricardo K. Machado, Nicolas M. Kawahala, Julian Munevar, Marcos A. Avila, Felix G. G. Hernandez   +13 more
wiley   +1 more source

Mn‐Substituted Topological Phase Transition in Topological Insulator Pt2HgSe3

Advanced Electronic Materials, Volume 12, Issue 19, 12 October 2026.
ABSTRACT Topological materials have gained a significant interest in recent years due to their unique features, leading to topological insulators (TI), Dirac or Weyl semimetals, etc. The layered material Pt2HgSe3${\rm Pt}_2{\rm HgSe}_3$ is found to be a dual TI characterized by significant spin–orbit coupling and band inversion.
Deergh Bahadur Shahi, Gang Bahadur Acharya, Dipak Bhattarai, Bishnu Karki, Madhav Prasad Ghimire   +4 more
wiley   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, Volume 2, Issue 5, October 2026.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

Machine Learning‐Assisted Second‐Order Perturbation Theory for Chemical Potential Correction Toward Hubbard U Determination

Advanced Intelligent Discovery, Volume 2, Issue 5, October 2026.
In this work, the Doubao large language model (LLM) is involved in the formula derivation processes for Hubbard U determination regarding the second‐order perturbations of the chemical potential. The core ML tool is optimized for physical domain knowledge, which is not limited to parameter prediction but rather serves as an interactive physical theory ...
Mingzi Sun, Tong Wu, Baian Chen, Zikang Li, Qiuyang Lu, Lu Lu, Hon Ho Wong, Cheuk Hei Chan, Bolong Huang   +8 more
wiley   +1 more source

Dielectric, Magnetic, and Thermal Studies of (1−x) Ni0.8 Mn0.2Fe2 O4 + xBaFeO3 (x = 0.2–0.8) Nanocomposites

ChemistrySelect, Volume 11, Issue 39, 20 October 2026.
Hydrothermally synthesized (1−x) Ni0.8 Mn0.2Fe2 O4 + xBaFeO3 (x = 0.2–0.8) 3 nanocomposites exhibit composition‐dependent structural, dielectric, magnetic, and thermal responses. The BaFeO3 incorporation produces mixed ferrite–perovskite phases, non‐Debye dielectric relaxation, and frequency‐dependent hopping conductivity, while magnetization decreases
H. V. Srikanth, S. Ramesh, B. Surendra Babu, Ramakrishna Rao Bhonsle, M. N. V. Ramesh, Sake Devendra   +5 more
wiley   +1 more source