Results 51 to 60 of about 64,093 (287)
ABSTRACT A second allogeneic (allo‐)hematopoietic stem cell transplantation (HSCT2) is a potential curative option for pediatric patients with acute lymphoblastic leukemia (ALL) following relapse after first allogeneic transplantation (HSCT1), but its efficacy is limited by high relapse rates and transplant‐related toxicity in highly pretreated ...
Ava Momm +10 more
wiley +1 more source
Rad-hard vertical JFET switch for the HV-MUX system of the ATLAS upgrade Inner Tracker
This work presents a new silicon vertical JFET (V-JFET) device, based on the trenched 3D-detector technology developed at IMB-CNM, to be used as switches for the High-Voltage powering scheme of the ATLAS upgrade Inner Tracker.
Fernandez-Martinez, Pablo +5 more
core +1 more source
The impact of repetitive unclamped inductive switching on the electrical parameters of low-voltage trench power nMOSFETs [PDF]
The impact of hot-carrier injection (HCI) due to repetitive unclamped inductive switching (UIS) on the electrical performance of low-voltage trench power n-type MOSFETs (nMOSFETs) is assessed.
Alatise, Olayiwola M. +7 more
core +1 more source
ABSTRACT Although most malignant germ cell tumors (GCTs) are highly curable with cisplatin‐based therapy, options for patients with multiply relapsed/refractory disease remain limited. For this population, we report the first pediatric use of gemcitabine, docetaxel, melphalan, and carboplatin (GemDMC) as part of sequential cycles of high‐dose ...
Maria Frost +10 more
wiley +1 more source
Crosstalk between the ribosome quality control‐associated E3 ubiquitin ligases LTN1 and RNF10
Loss of the E3 ligase LTN1, the ubiquitin‐like modifier UFM1, or the deubiquitinating enzyme UFSP2 disrupts endoplasmic reticulum–ribosome quality control (ER‐RQC), a pathway that removes stalled ribosomes and faulty proteins. This disruption may trigger a compensatory response to ER‐RQC defects, including increased expression of the E3 ligase RNF10 ...
Yuxi Huang +8 more
wiley +1 more source
Study on Single-event Gate Rupture Mechanism of Asymmetric-trench SiC MOSFET
The demand for kilovolt-level radiation-hardened SiC devices in modern spacecraft is urgent. To provide a theoretical basis for the hardening design of SiC MOSFETs against single-event gate rupture (SEGR), a study on the single-event effects of 1 200 V ...
WANG Lihao1, 2, DONG Tao2, FANG Xingyu2, QI Xiaowei2, WANG Liang2, CHEN Miao2, ZHANG Xing1, ZHAO Yuanfu2
doaj +1 more source
An Innovated 80V-100V High-Side Side-Isolated N-LDMOS Device
We used TCAD Synopsys 3D tools and device simulators to propose an innovative device structure of 80V-100V high-side NLDMOS by using the silicon to silicon-di-oxide ratio with side trench.
Yangi Shao Ming +6 more
doaj +1 more source
The Role of the Substrate on Pattern-Dependent Charging [PDF]
Monte Carlo simulations of charging and profile evolution during plasma etching reveal that the substrate can mediate current imbalance across the wafer.
Giapis, Konstantinos P. +1 more
core +1 more source
The Ile181Asn variant of human UDP‐xylose synthase (hUXS1), associated with a short‐stature genetic syndrome, has previously been reported as inactive. Our findings demonstrate that Ile181Asn‐hUXS1 retains catalytic activity similar to the wild‐type but exhibits reduced stability, a looser oligomeric state, and an increased tendency to precipitate ...
Tuo Li +2 more
wiley +1 more source

