Results 251 to 260 of about 112,501 (276)

Linewidth and writing resolution

2016
This chapter introduces the concept of linewidth and writing resolution in direct laser writing (DLW) lithography. The experimental factors controlling these two parameters are mainly the wavelength of the laser, the numerical aperture of the objective lenses, and the mechanical strength of the photoresist.
de Miguel, Gustavo, Vicidomini, Giuseppe, Harke, Benjamin, Diaspro, Alberto   +3 more
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Commutation relations and laser linewidth

Physical Review A, 1990
The waves reflected from a resonator must obey the commutation relations of waves in free space. This fact alone, regardless of whether the medium in the resonator is linear or nonlinear, imposes commutation relations on the internal noise sources. The minimum linewidth of an oscillator can be derived from this fact alone.
, Yamamoto, , Haus
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Ultranarrow linewidth waveguide excimer lasers

Applied Optics, 1989
We have constructed a single longitudinal mode XeCl laser using microwave discharge waveguide laser technology. The pulse duration, repetition rate, and simplicity of construction associated with waveguide excimer lasers lend this system unique capabilities and a broad utility for interfacing with other excimer devices.
C P, Christensen, B J, Feldman, A, Huston   +2 more
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Photoemission linewidths and quasiparticle lifetimes

Physical Review B, 1993
Expressions are derived for the relationship between the measured linewidths in angle-resolved valence-band photoemission spectra and the lifetimes of the photoelectron and photohole. The expressions are different for the energy-distribution curve (EDC), constant initial-state spectrum (CIS), and constant final-state spectrum modes of data acquisition,
, Smith, , Thiry, , Petroff
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SPL Linewidth Control

2001
The current-controlled scanning probe lithography (SPL) systems that we developed (described in Chapter 3) can reliably pattern uniform features in organic resists with dimensions below 100 nm. In this chapter, we compare electron exposures made by SPL to those made by electron beam lithography (EBL).
Hyongsok T. Soh, Kathryn Wilder Guarini, Calvin F. Quate   +2 more
openaire   +1 more source

Homogeneous linewidth and linewidth enhancement factor for a GaAs semiconductor laser

Journal of Physics D: Applied Physics, 1986
The homogeneous linewidth and the linewidth enhancement factor alpha for a room-temperature GaAs laser are studied, calculating the time constant for the relaxation of the polarisation. The homogeneous linewidth obtained, arising from electron-electron and electron-phonon interactions, is of the order of several meV.
A Sugimura, E Patzak, P Meissner
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Theory of vibrational linewidths

Chemical Physics Letters, 1976
Abstract A simple theory of the homogeneous broadening of vibrational lines in the IR and Raman spectra of molecules in liquids is presented. The theory considers the relationship between the linewidth and excited state lifetime, parameters which may now be independently measured. It is used to qualitatively explain the dependence of the linewidth on
P.A. Madden, R.M. Lynden-Bell
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Semiconductor laser linewidth

Optics and Spectroscopy, 2015
The contribution of quantum fluctuations of the electromagnetic-field amplitude and phase and the medium to the semiconductor laser linewidth is found. It is shown that this contribution increases the linewidth by an order of magnitude in comparison with the contribution of spontaneous radiation.
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Multielement laser-diode linewidth theory

Optics Letters, 1988
A simple formula is presented for the linewidth-power product of multielement laser diodes, under the condition that the active elements are submitted to the same field. The theory is particularly applicable to laser diodes incorporating two thin active layers of different composition.
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Micromaser linewidth

Physical Review A, 1997
Rebecca R. McGowan, William C. Schieve
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