Results 1 to 10 of about 2,576,589 (345)

Simulation and Experimental Research on a Beam Homogenization System of a Semiconductor Laser [PDF]

Sensors, 2022
Aiming at the application of laser active imaging detection technology, this paper studied the beam homogenization system of a semiconductor laser based on a homogenizing pipe. Firstly, the principle of the homogenizing pipe was introduced. Secondly, the
Haijing Zheng, Huayan Sun, Huaili Zhang, Yingchun Li, Huichao Guo, Laixian Zhang, Rong Li, Qiang Yin   +7 more
doaj   +2 more sources

Terahertz semiconductor laser chaos [PDF]

Nature Communications
In the terahertz (THz) range, due to the lack of effective THz light sources, chaos generation in THz semiconductor lasers, e.g., quantum cascade lasers (QCLs), is particularly challenging.
Binbin Liu, Carlo Silvestri, Kang Zhou, Xuhong Ma, Shumin Wu, Ziping Li, Wenjian Wan, Zhenzhen Zhang, Ying Zhang, Junsong Peng, Heping Zeng, Cheng Wang, Massimo Brambilla, Lorenzo Luigi Columbo, Hua Li   +14 more
doaj   +2 more sources

Passively mode-locked diode-pumped surface-emitting semiconductor laser

IEEE Photonics Technology Letters, 2000
A surface-emitting semiconductor laser has been passively mode locked in an external cavity incorporating a semiconductor saturable absorber mirror. The gain medium consists of a stack of 12 InGaAs-GaAs strained quantum wells, grown above a Bragg mirror ...
Sjoerd Hoogland, S Dhanjal, A C Tropper   +2 more
exaly   +2 more sources

Colloidal Semiconductor Nanocrystal Lasers and Laser Diodes

Chemical Reviews, 2023
Lasers and optical amplifiers based on solution-processable materials have been long-desired devices for their compatibility with virtually any substrate, scalability, and ease of integration with on-chip photonics and electronics.
Namyoung Ahn, Clément Livache, V. Pinchetti, V. Klimov   +3 more
semanticscholar   +1 more source

Emission characteristics variation of GaAs0.92Sb0.08/Al0.3Ga0.7As strained multiple quantum wells caused by rapid thermal annealing

Scientific Reports, 2021
Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission characteristics of GaAs0.92Sb0.08/Al0.3Ga0.7As multiple quantum wells, which investigated by temperature ...
Dengkui Wang, Xian Gao, Jilong Tang, Xuan Fang, Dan Fang, Xinwei Wang, Fengyuan Lin, Xiaohua Wang, Rui Chen, Zhipeng Wei   +9 more
doaj   +1 more source

Plasma-activated direct bonding at room temperature to achieve the integration of single-crystalline GaAs and Si substrate

Results in Physics, 2021
We use a plasma-activated direct bonding process at room temperature to form heterostructures between GaAs and traditional Si substrates. The intermediate layer is not required at the bonding interface.
Rui Huang, Tian Lan, Chong Li, Zhiyong Wang   +3 more
doaj   +1 more source

Review of Issues and Solutions in High-Power Semiconductor Laser Packaging Technology

Frontiers in Physics, 2021
In the past 20 years, semiconductor lasers have been widely used in medical, industrial, and communication applications, providing a revolutionary and powerful platform for the fifth generation and advanced manufacturing.
Yixiong Yan, Yu Zheng, Haigang Sun, Ji’an Duan   +3 more
doaj   +1 more source

Hertz-linewidth semiconductor lasers using CMOS-ready ultra-high-Q microresonators [PDF]

Nature Photonics, 2020
Driven by narrow-linewidth bench-top lasers, coherent optical systems spanning optical communications, metrology and sensing provide unrivalled performance. To transfer these capabilities from the laboratory to the real world, a key missing ingredient is
W. Jin, Qifan Yang, L. Chang, B. Shen, Heming Wang, M. A. Leal, Lue Wu, Maodong Gao, Avi Feshali, M. Paniccia, K. Vahala, J. Bowers   +11 more
semanticscholar   +1 more source

3D Simulation for Melt Laser Anneal Integration in FinFET’s Contact

IEEE Journal of the Electron Devices Society, 2020
Process integration feasibility of UV nanosecond melt laser annealing (MLA) in 14 nm node generation FinFET's contact for dopant surface segregation and activation is assessed by using a 3D TCAD simulation tool.
Toshiyuki Tabata, Benoit Curvers, Karim Huet, Soon Aik Chew, Jean-Luc Everaert, Naoto Horiguchi   +5 more
doaj   +1 more source

Integrated Pockels laser [PDF]

Nature Communications, 2022
The development of integrated semiconductor lasers has miniaturized traditional bulky laser systems, enabling a wide range of photonic applications. A progression from pure III-V based lasers to III-V/external cavity structures has harnessed low-loss ...
Mingxiao Li, L. Chang, Lue Wu, Jeremy Staffa, Jingwei Ling, U. Javid, Shixin Xue, Yang He, R. Lopez-Rios, Theodore J. Morin, Heming Wang, B. Shen, S. Zeng, Linxaio Zhu, K. Vahala, J. Bowers, Q. Lin   +16 more
semanticscholar   +1 more source