Results 1 to 10 of about 45,077 (116)

Terahertz semiconductor laser chaos [PDF]

Nature Communications
In the terahertz (THz) range, due to the lack of effective THz light sources, chaos generation in THz semiconductor lasers, e.g., quantum cascade lasers (QCLs), is particularly challenging.
Binbin Liu, Carlo Silvestri, Kang Zhou, Xuhong Ma, Shumin Wu, Ziping Li, Wenjian Wan, Zhenzhen Zhang, Ying Zhang, Junsong Peng, Heping Zeng, Cheng Wang, Massimo Brambilla, Lorenzo Luigi Columbo, Hua Li   +14 more
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Emission characteristics variation of GaAs0.92Sb0.08/Al0.3Ga0.7As strained multiple quantum wells caused by rapid thermal annealing

Scientific Reports, 2021
Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission characteristics of GaAs0.92Sb0.08/Al0.3Ga0.7As multiple quantum wells, which investigated by temperature ...
Dengkui Wang, Xian Gao, Jilong Tang, Xuan Fang, Dan Fang, Xinwei Wang, Fengyuan Lin, Xiaohua Wang, Rui Chen, Zhipeng Wei   +9 more
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Plasma-activated direct bonding at room temperature to achieve the integration of single-crystalline GaAs and Si substrate

Results in Physics, 2021
We use a plasma-activated direct bonding process at room temperature to form heterostructures between GaAs and traditional Si substrates. The intermediate layer is not required at the bonding interface.
Rui Huang, Tian Lan, Chong Li, Zhiyong Wang   +3 more
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Review of Issues and Solutions in High-Power Semiconductor Laser Packaging Technology

Frontiers in Physics, 2021
In the past 20 years, semiconductor lasers have been widely used in medical, industrial, and communication applications, providing a revolutionary and powerful platform for the fifth generation and advanced manufacturing.
Yixiong Yan, Yu Zheng, Haigang Sun, Ji’an Duan   +3 more
doaj   +1 more source

3D Simulation for Melt Laser Anneal Integration in FinFET’s Contact

IEEE Journal of the Electron Devices Society, 2020
Process integration feasibility of UV nanosecond melt laser annealing (MLA) in 14 nm node generation FinFET's contact for dopant surface segregation and activation is assessed by using a 3D TCAD simulation tool.
Toshiyuki Tabata, Benoit Curvers, Karim Huet, Soon Aik Chew, Jean-Luc Everaert, Naoto Horiguchi   +5 more
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Investigation of the Blistering and Exfoliation Mechanism of GaAs Wafers and SiO₂/Si₃N₄/GaAs Wafers by He⁺ and H⁺ Implantation

Crystals, 2020
The thermally activated blistering and exfoliation of GaAs wafers and SiO2/Si3N4/GaAs wafers after H+ and He+ implantation is systematically investigated.
Rui Huang, Tian Lan, Chong Li, Jing Li, Zhiyong Wang   +4 more
doaj   +1 more source

Study of optical modulation of the bipolar exposed transistor using semiconductor laser [PDF]

مجلة التربية والعلم, 2008
: The effects of semiconductor laser light on static and dynamic characteristics of bipolar exposed transistor had been studied experimentally. There was no significant influence on these characteristics in the absence of semiconductor light on ...
Taghreed Younis, Musab Mohammed
doaj   +1 more source

Formation of metal–semiconductor nanowire heterojunctions by nanosecond laser irradiation

AIP Advances, 2021
Laser nano-joining has emerged as a preferred technique for better device performance as it can result in stronger mechanical contacts and enhance the electrical properties between nanocomponents.
Shuo Zheng, Walter W. Duley, Peng Peng, Y. Norman Zhou   +3 more
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Effect of Post Thermal Annealing on the Optical Properties of InP/ZnS Quantum Dot Films

Nanoscale Research Letters, 2018
The enhancement of optical properties via thermal annealing on InP/ZnS core/shell quantum dot (QD) film was investigated in this work. The increase of emission intensities of the QD films was observed after thermal annealing at 180 °C for 5 min.
Bowen Zhang, Zhipeng Wei, Xinwei Wang, Xuan Fang, Dengkui Wang, Xian Gao, Dan Fang, Xiaohua Wang, Rui Chen   +8 more
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Research of selective etching in LiNbO3 using proton-exchanged wet etching technique

Materials Research Express, 2020
Lithium niobate material (LN) has shown great application potentials in the fabrication of integrated optical devices due to its excellent physical properties, especially with the occurrence of lithium niobate-on-insulator (LNOI) substrate.
Ying Li, Tian Lan, Dengcai Yang, Meihua Xiang, Jingjing Dai, Chong Li, Zhiyong Wang   +6 more
doaj   +1 more source