Results 11 to 20 of about 220,832 (286)
Re-analysis of single-mode conditions for thin-film lithium niobate rib waveguides
Results in Physics, 2021 Single-mode waveguide devices are necessary in photonic integrated circuits. Previous studies on the single-mode conditions (SMCs) of the thin film lithium niobate (TFLN) either only focus on wire waveguide, or lack comprehensive discussions on the ...
Ying Li +3 more
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Coexisting periodic attractors in injection locked diode lasers [PDF]
, 1997 We present experimental evidence for coexisting periodic attractors in a semiconductor laser subject to external optical injection. The coexisting attractors appear after the semiconductor laser has undergone a Hopf bifurcation from the locked steady ...
A Gavrielides +14 more
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Research of selective etching in LiNbO3 using proton-exchanged wet etching technique
Materials Research Express, 2020 Lithium niobate material (LN) has shown great application potentials in the fabrication of integrated optical devices due to its excellent physical properties, especially with the occurrence of lithium niobate-on-insulator (LNOI) substrate.
Ying Li +6 more
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Dispersion-induced dynamics of coupled modes in a semiconductor laser with saturable absorption [PDF]
, 2014 We present an experimental and theoretical study of modal nonlinear dynamics in a specially designed dual-mode semiconductor Fabry-Perot laser with a saturable absorber.
O'Brien, Stephen +2 more
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A dual-grating InGaAsP/InP DFB laser integrated with an SOA for THz generation [PDF]
, 2016 We report a dual-mode semiconductor laser that has two gratings with different periods below and above the active layer. A semiconductor optical amplifier (SOA), which is integrated with the dual-mode laser, plays an important role in balancing the ...
Deng, Qiufang +5 more
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Scientific Reports, 2017 Effect of charge carrier confinement and ultra-low disorder acquainted in AlGaAs/GaAs multi-quantum well system is investigated via Magneto-photoluminescence spectroscopy.
S. Haldar +6 more
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Improved Optical Property and Lasing of ZnO Nanowires by Ar Plasma Treatment
Nanoscale Research Letters, 2019 ZnO nanowires play a very important role in optoelectronic devices due to the wide bandgap and high exciton binding energy. However, for one-dimensional nanowire, due to the large surface to volume ratio, surface traps and surface adsorbed species acts ...
Haolin Li +8 more
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Continuous-wave Raman laser pumped within a semiconductor disk laser cavity [PDF]
, 2011 A KGd(WO4)(2) Raman laser was pumped within the cavity of a cw diode-pumped InGaAs semiconductor disk laser (SDL). The Raman laser threshold was reached for 5: 6W of absorbed diode pump power, and output power up to 0.8W at 1143nm, with optical ...
Alan J. Kemp +21 more
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Hot Carrier Photocurrent through MOS Structure
Applied Sciences, 2021 Flow of photocurrent through the metal-oxide-semiconductor structure induced by the pulsed infrared CO2 laser is investigated experimentally. In the case of a perfect insulator, the photocurrent has a photocapacitive character.
Jonas Gradauskas, Steponas Ašmontas
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Thermal photon statistics in laser light above threshold [PDF]
, 1999 We show that the reduction in photon number fluctuations at laser threshold often cited as a fundamental laser property does not occur in typical semiconductor lasers such as the ones commonly used in modern technological applications today. Indeed, such
Hess, Ortwin, Hofmann, Holger F.
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