Results 201 to 210 of about 2,440,609 (329)

Semiconducting THO‐C3N Monolayers for Ultrahigh Anisotropic Carrier Mobility

Advanced Science, EarlyView.
A precise site‐specific N‐doping strategy that drives a secondary electronic transition in net W is proposed, enabling the electronic properties transition from metal to Dirac semimetal and ultimately to semiconductor. The obtained THO‐C3N‐2 and THO‐C3N‐3 semiconductors exhibit high carrier mobilities and pronounced mobility anisotropy, with THO‐C3N‐2 ...
Rui Tan, Xueqing Chen, Jifeng Luo, Zhe Xue, Zehou Li, Xiaolin Wei, Zhenkun Tang, Gaokuo Zhong   +7 more
wiley   +1 more source

High‐Performance Ambipolar Organic Electrochemical Transistors Based on Diketopyrrolopyrrole‐Dialkoxybithiazole Conjugated Polymers for Single‐component Inverters

Advanced Science, EarlyView.
Two donor‐acceptor conjugated polymers, incorporating diketopyrrolopyrrole (DPP) and dialkoxybithiazole (2Tz) units with ethylene glycol (EG) side chains, exhibit relatively balanced ambipolar organic electrochemical transistor (OECT) performance. This ambipolarity enables the realization of single‐component complementary inverters capable of ternary ...
Jiazheng Li, Zhi Li, Jiayu Huang, Jingjing Su, Peijie Xu, Siwen Wang, Ping Zhang, Yuchuan Tian, Tao Pan, Junyang Liu, Junyu Li, Gang Ye, Ryan C. Chiechi, Yanxi Zhang, Wenjing Hong   +14 more
wiley   +1 more source

Synergistic Effects of Additive Engineering in Enhancing the Performance of Sn–Pb Perovskite Thin‐Film Transistors and Derived Logic Circuits

Advanced Science, EarlyView.
An additive engineering strategy employing 4,8‐dihydrobenzo[1,2‐b:4,5‐b′]dithiophen‐4,8‐dione (BDTD) is utilized to passivate bulk defects, regulate crystallization dynamics, and suppress Sn4+ formation in Sn–Pb perovskite thin‐film transistors. The incorporation of BDTD yields a substantial enhancement in electrical performance, increasing the hole ...
Zeeshan Alam Ansari, Abhishek Kumar, Soumallya Banerjee, Chintam Hanmandlu, Anjali Thakran, Yu‐Te Chen, Po‐Yu Yang, Shenghan Li, Chun‐Wei Pao, Yun‐Chorng Chang, Chu‐Chen Chueh, Chih‐Wei Chu   +11 more
wiley   +1 more source

Electrical Coupling and Simulation of Monolithic 3D Logic Circuits and Static Random Access Memory. [PDF]

Micromachines (Basel), 2019
Ahn TJ, Choi BH, Lim SK, Yu YS.
europepmc   +1 more source

An On‐Demand Neuromorphic Vision System Enabled by a Multi‐Paradigm Neuromorphic Device and Hierarchical Reconfigurability Designed from Device to System Level

Advanced Science, EarlyView.
An on‐demand ultra‐reconfigurable intelligent vision system with hierarchical reconfigurability from device to system levels is demonstrated. Through co‐design of a multi‐paradigm device, reconfigurable circuits, and adaptive system architecture/algorithms, the system enables seamless switching among spiking, non‐spiking, neuromorphic imaging (NI), and
Biyi Jiang, Jiayi Xu, Liang Ran, Xinhe Feng, Khalil Harrabi, Yida Li, Longyang Lin, Feichi Zhou   +7 more
wiley   +1 more source

Accelerated Discovery of Topological Conductors for Nanoscale Interconnects

Advanced Science, EarlyView.
Copper interconnects exhibit a sharp increase in resistivity at ultra‐scaled dimensions, threatening continued miniaturization of integrated circuits. The gapless surface states of topological semimetals provide conduction channels resistant to localization.
Alexander C. Tyner, William Rogers, Po‐Hsin Shih, Yi‐Hsin Tu, Gengchiau Liang, Hsin Lin, Ching‐Tzu Chen, James M. Rondinelli   +7 more
wiley   +1 more source

Error Mitigation Using Approximate Logic Circuits: A Comparison of Probabilistic and Evolutionary Approaches

IEEE Transactions on Reliability, 2016
A. Sánchez-Clemente, L. Entrena, Radek Hrbacek, L. Sekanina   +3 more
semanticscholar   +1 more source

Integration of Freestanding High‐k Oxide Membranes for 2D Ferroelectric Field‐Effect Transistors

Advanced Science, EarlyView.
This work introduces a defect‐tolerant integration strategy that enables freestanding BaTiO3 membranes to form low‐leakage top‐gate junctions with MoS2. The resulting FeFETs exhibit a record 0.22 V nm−1 memory window, ultrahigh‐k response, and near‐ideal subthreshold swings.
Zejing Guo, Xuyang Sha, Fang Xu, Guangyi Huang, Jinfeng Zhang, Yang Mou, Guorui Zhao, Jiaqi Liu, Qing Lan, Wenqing Song, Cheng Zhang, Hai Huang, Changlin Zheng, Lingfei Wang, Hangwen Guo, Jian Shen, Wu Shi   +16 more
wiley   +1 more source

Partial TMR in FPGAs Using Approximate Logic Circuits

IEEE Transactions on Nuclear Science, 2016
A. Sánchez-Clemente, L. Entrena, M. García-Valderas   +2 more
semanticscholar   +1 more source

T Cell Exhaustion in Cancer Immunotherapy: Heterogeneity, Mechanisms, and Therapeutic Opportunities

Advanced Science, EarlyView.
T cell exhaustion limits immunotherapy efficacy. This article delineates its progression from stem‐like to terminally exhausted states, governed by persistent antigen, transcription factors, epigenetics, and metabolism. It maps the exhaustion landscape in the TME and proposes integrated reversal strategies, providing a translational roadmap to overcome
Yang Yu, Xiaoyu Yao, Qingyang Wang, Mengrui Yang, Runze Li, Jiangjiang Qin, Jing Zhuang, Changgang Sun   +7 more
wiley   +1 more source