Results 231 to 240 of about 2,440,609 (329)

Reconfigurable Combinational Logic Operations Using Triple‐Gated Feedback Field‐Effect Transistors for Logic‐In‐Memory Computing

open access: yesAdvanced Electronic Materials, EarlyView.
In this study, we demonstrated that four distinct combinational logic operations can be reconfigured and executed within a single circuit structure, where each reconfigurable logic‐in‐memory cell dynamically adapts its function. The reconfigurable logic‐in‐memory cell, composed of triple‐gated feedback field‐effect transistors, performs NOT, AND, OR ...
Dongki Kim   +4 more
wiley   +1 more source

Toward Reliable Metal Halide Perovskite FETs: From Electronic Structure and Device Physics to Stability and Performance Engineering

open access: yesAdvanced Electronic Materials, EarlyView.
Metal halide perovskite field‐effect transistors (PeFETs) offer great promise for flexible, low‐cost, and high‐performance due to their excellent charge carrier properties. However, challenges like ion migration, hysteresis, and instability limit their performance.
Georgios Chatzigiannakis   +13 more
wiley   +1 more source

Flexible monolithic 3D complementary circuits based on 2D semiconductor inks. [PDF]

open access: yesNat Commun
Zou T   +10 more
europepmc   +1 more source

RRAM Variability Harvesting for CIM‐Integrated TRNG

open access: yesAdvanced Electronic Materials, EarlyView.
This work demonstrates a compute‐in‐memory‐compatible true random number generator that harvests intrinsic cycle‐to‐cycle variability from a 1T1R RRAM array. Parallel entropy extraction enables high‐throughput bit generation without dedicated circuits. This approach achieves NIST‐compliant randomness and low per‐bit energy, offering a scalable hardware
Ankit Bende   +4 more
wiley   +1 more source

A Polymorphic Reconfigurable Multi‐Electrode Device Based on Electrically Bistable Nanostructured Metallic Films

open access: yesAdvanced Electronic Materials, EarlyView.
A polymorphic reconfigurable multi‐electrode device based on electrically bistable nanostructured metallic films. The adaptive reconfiguration properties of the nanostructured network under specific input voltages drive the reprogrammability of the device. This system can be employed for the implementation of polymorphic devices, which can be used both
Silvia Bressan   +4 more
wiley   +1 more source

Inverters with Different Load Configurations and a Two-Input Multiplexer Based on IGZO NMOS TFTs. [PDF]

open access: yesNanomaterials (Basel)
Hernandez-Luna IS   +5 more
europepmc   +1 more source

A field-programmable gate array based on wafer-scale 2D semiconductor. [PDF]

open access: yesNatl Sci Rev
Sun Q   +13 more
europepmc   +1 more source

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