Results 261 to 270 of about 567,077 (336)

The integration of functions into logic programming: From theory to practice

, 1994
Michael Hanus
openalex   +1 more source

All Organic Fully Integrated Neuromorphic Crossbar Array

Advanced Electronic Materials, EarlyView.
In this work, the first fully integrated crossbar array of electrochemical random‐access memory (ECRAM) that is composed entirely of organic materials is represented. This array can perform inference and in situ parallel training and is capable of classifying linearly separable 2D and 3D classification tasks with high accuracy.
Setareh Kazemzadeh, Tim Stevens, Yoeri van de Burgt   +2 more
wiley   +1 more source

Thermal colloid programming. [PDF]

Sci Rep
Fortulan R, Raeisi Kheirabadi N, Chiolerio A, Adamatzky A.   +3 more
europepmc   +1 more source

A Model-Theoretic Reconstruction of the Operational Semantics of Logic Programs

, 1993
Moreno Falaschi, Giorgio Levi, Maurizio Martelli, Catuscia Palamidessi   +3 more
openalex   +1 more source

High Linearity and Symmetry Ferroelectric Artificial Neuromorphic Devices Based on Ultrathin Indium‐Tin‐Oxide Channels

Advanced Electronic Materials, EarlyView.
Ultrathin ITO and ferroelectric HZO are used to fabricate synaptic transistors. The device has a great on/off ratio ≈108 with a memory window of 1.73 V, successfully simulates the characteristics of the human brain, and achieves good linearity of 0.45 for potential and 0.73 for depression and low asymmetry of 0.89.
Siwei Wang, Xuemeng Hu, Baifan Qian, Jiajie Yu, Zhenhai Li, Qingqing Sun, David Wei Zhang, Qingxuan Li, Lin Chen   +8 more
wiley   +1 more source

CirclizePlus: using ggplot2 feature to write readable R code for circular visualization. [PDF]

Front Genet
Zhang Z, Cao T, Huang Y, Xia Y.
europepmc   +1 more source

Semantics of Horn and disjunctive logic programs

, 1991
Jorge Lobo, Arcot Rajasekar, Jack Minker
openalex   +1 more source

Logic programming with sets

Journal of Computer and System Sciences, 1987
openaire   +3 more sources

On the Enhanced p‐Type Performance of Back‐Gated WS2 Devices

Advanced Electronic Materials, EarlyView.
A scalable method for directly growing WS2 enables robust and persistent p‐type behavior in back‐gated FETs, independent of metal contacts, thickness, or ambient conditions. Electrical measurements reveal minimal Schottky barrier heights and stable thermionic transport, while first‐principles simulations suggest tungsten vacancies or WO3 species as the
Carlos Marquez, Farzan Gity, Jose C. Galdon, Alberto Martinez, Norberto Salazar, Lida Ansari, Hazel Neill, Luca Donetti, Francisco Lorenzo, Manuel Caño‐Garcia, Ruben Ortega, Carlos Navarro, Carlos Sampedro, Paul K. Hurley, Francisco Gamiz   +14 more
wiley   +1 more source

Low-Power Memristor for Neuromorphic Computing: From Materials to Applications. [PDF]

Nanomicro Lett
Xia Z, Sun X, Wang Z, Meng J, Jin B, Wang T.   +5 more
europepmc   +1 more source