Results 151 to 160 of about 4,459,968 (325)

Myosin VI Drives Clathrin-Mediated AMPA Receptor Endocytosis to Facilitate Cerebellar Long-Term Depression [PDF]

, 2019
Wolfgang Wagner, Kristina Lippmann, Frank F. Heisler, Kira V. Gromova, Franco L. Lombino, Mona K. Roesler, Yvonne Pechmann, Sönke Hornig, Michaela Schweizer, Simona Polo, Jürgen R. Schwarz, Jens Eilers, Matthias Kneussel   +12 more
openalex   +1 more source

Homosynaptic long-term depression in area CA1 of hippocampus and effects of N-methyl-D-aspartate receptor blockade.

Proceedings of the National Academy of Sciences of the United States of America, 1992
S. Dudek, M. Bear
semanticscholar   +1 more source

Enhanced Switching Performance in Single‐Crystalline PbTiO3 Ferroelectric Memristors for Replicating Synaptic Plasticity

Advanced Functional Materials, EarlyView.
This study demonstrated single‐crystalline PbTiO3‐based memristors with atomically sharp interfaces, well‐ordered lattices, and minimal lattice mismatch. The devices exhibited an ON/OFF ratio exceeding 105, high stability, and rich resistance‐state modulation.
Haining Li, Zhiqiang Liao, Risa Kataoka, Md Sarker Shamim, Takeshi Kijima, Hiroyasu Yamahara, Hitoshi Tabata, Munetoshi Seki   +7 more
wiley   +1 more source

Long-term prognosis of depression in primary care

Bulletin of the World Health Organization, 2000
This article uses longitudinal data from a primary care sample to examine long-term prognosis of depression. A sample of 225 patients initiating antidepressant treatment in primary care completed assessments of clinical outcome (Hamilton Depression ...
G.E. Simon
doaj  

Influence of Attachment Anxiety on the Relationship between Loneliness and Depression among Long-Term Care Residents [PDF]

, 2021
Suthikarn Arunrasameesopa, Nahathai Wongpakaran, Tinakon Wongpakaran   +2 more
openalex   +1 more source

Mechanisms of synaptic depression triggered by metabotropic glutamate receptors [PDF]

, 2018
.: Glutamate, by activation of metabotropic receptors (mGluRs), can lead to a reduction of synaptic efficacy at many synapses. These forms of synaptic plasticity are referred to as long-term depression (mGluR-LTD).
Bellone, C., Lüscher, C., Mameli, M.
core  

An Ultra‐Robust Memristor Based on Vertically Aligned Nanocomposite with Highly Defective Vertical Channels for Neuromorphic Computing

Advanced Functional Materials, EarlyView.
An ultra‐robust memristor based on SrTiO3‐CeO2 (S‐C) vertically aligned nanocomposite (VAN) achieving exceptional endurance of 1012 switching cycles via interface engineering. Artificial neural networks (ANNs) integrated with S‐C VAN memristors exhibit high training accuracy across multiple datasets.
Zedong Hu, Hongyi Dou, Jeremy B. Gan, Cun Li, Xuanyu Sheng, Juanjuan Lu, Abhijeet Choudhury, Jialong Huang, Yizhi Zhang, Zhongxia Shang, Ye Cao, Xinghang Zhang, Haiyan Wang   +12 more
wiley   +1 more source

Phospholipase Cβ4 and Protein Kinase Cα and/or Protein Kinase CβI Are Involved in the Induction of Long Term Depression in Cerebellar Purkinje Cells [PDF]

, 2001
Moritoshi Hirono, Takashi Sugiyama, Yasushi Kishimoto, Ikuko Sakai, Takahito Miyazawa, Masahiro Kishio, Hiroko Inoue, Kazuki Nakao, Masayuki Ikeda, Shigenori Kawahara, Yutaka Kirino, Motoya Katsuki, Hidenori Horie, Yoshihiro Ishikawa, Tohru Yoshioka   +14 more
openalex   +1 more source

Enhanced Performance and In Situ TEM Investigation in High Entropy Alloy Electrode Based Memristors

Advanced Functional Materials, EarlyView.
This study utilizes in situ TEM, EDS, EELS, and APT to reveal switching in HEA/ZnO/Nb:STO RRAM. High diffusivity of Mn lowers the SET voltage to 1.5 V. Cr stabilizes the oxygen layer, while Fe, Co, and Ni stabilize the electrode. Based on these observations, the device achieves 30 ns switching, a 10⁷ memory window, and excellent endurance, being ...
Jing‐Yuan Tsai, Chun‐Wei Huang, Jui‐Yuan Chen, Che‐Hung Wang, Ping‐Hsien Wu, Jia‐Wei Chen, Yu‐Chen Yang, Tung‐huan Chou, Kun‐lin Lin, Ying‐Hao Chu, Wen‐Wei Wu   +10 more
wiley   +1 more source

Dynamic Control of Synaptic Plasticity by Competing Ferroelectric and Trap‐Assisted Switching in IGZO Transistors with Al2O3/HfO2 Dielectrics

Advanced Functional Materials, EarlyView.
A frequency‐tunable ferroelectric synaptic transistor based on a buried‐gate InGaZnO channel and Al2O3/HfO2 dielectric stack exhibits linear and reversible weight updates using single‐polarity pulses. By switching between ferroelectric and trap‐assisted modes depending on input frequency, the device simplifies neuromorphic circuit design and achieves ...
Ojun Kwon, Dong Ho Lee, Seyoung Oh, Jongwon Yoon, Hyo‐Bae Kim, Ji‐Hoon Ahn, Woojin Park, Han Seul Kim, Byungjin Cho   +8 more
wiley   +1 more source