Results 91 to 100 of about 81,809 (301)

A 0.6 V low-power 3.5 GHz CMOS low noise amplifier for WiMAX applications [PDF]

open access: yes, 2013
[[abstract]]In this letter, a low-voltage and low-power 3.5-GHz low noise ampli?er (LNA) is designed and fabricated using TSMC 0.18-lm MS/RF complementary metal-oxide-semiconductor ?eld effect transistor (CMOS) technology.
Jeng-Han Tsai;Yi-Jhang Lin;Hao-Chun Yu
core  

Thermally Pre‐Formed Reconfigurable Resistive Random‐Access Memory Crossbar Arrays: A Dual‐Mode Platform for Robust Physically Unclonable Functions and In‐Memory Computing

open access: yesAdvanced Functional Materials, EarlyView.
A reconfigurable RRAM platform utilizing thermally pre‐formed filaments (TPFs) is developed to realize robust hardware security. By exploiting the thermodynamic stochasticity of TPFs, exceptionally reliable physically unclonable functions (PUFs) are achieved.
Seongbin Kwon   +4 more
wiley   +1 more source

Development of a Three‐Axis Planar Hall Magnetoresistance Sensor Using a Superparamagnetic Nanoparticle‐Based Flux Guide

open access: yesAdvanced Functional Materials, EarlyView.
A printed superparamagnetic nanoparticle‐based flux guide enables the realization of a hysteresis‐free three‐axis magnetic sensor. This innovative architecture efficiently redirects out‐of‐plane fields to planar sensing elements, facilitating simultaneous vector detection without complex reset protocols.
Changyeop Jeon   +10 more
wiley   +1 more source

LNA A 1.9 GHZ low noise amplifier

open access: yesIngeniería Investigación y Desarrollo, 2006
This paper shows the design, the simulation, and the layout from a low noise amplifier (LNA), designed with and approximate band from 25 to 80 MHz. The design results of the matching neworks are shown, its noise figure, its available and transduced gain ...
Jorge Julián Moreno-Rubio   +1 more
doaj  

Digitally tunable low noise amplifier [PDF]

open access: yes, 2004
Low noise amplifiers are classified into two categories: Wideband low noise amplifiers and Narrowband low noise amplifiers. Wideband LNAs are known for achieving a poor noise performance.
Benmansour, Mohamed
core   +1 more source

Interface Effects in Ultrathin Silicon on Insulator Films

open access: yesAdvanced Functional Materials, EarlyView.
This work establishes a systematic framework to discriminate how bulk and interface phenomena affect charge transport in ultrathin P‐doped silicon‐on‐insulator (SOI) films. For Si films below 15 nm, electrical characterization demonstrates that interface states drive charge transport, shifting the metal‐insulator transition (MIT) critical dopant ...
Andrea Pulici   +8 more
wiley   +1 more source

Submicron Metasurface Reconfigured Multiband Smart Windows

open access: yesAdvanced Functional Materials, EarlyView.
This work presents a submicron metasurface reconfigured multiband thermochromic smart window. By integrating subwavelength nanostructures into a Fabry−Perot resonator configuration, it mitigates conventional trade‐offs to simultaneously deliver high luminous transmittance and robust solar heating and radiative cooling modulation capabilities ...
Guanya Wang   +8 more
wiley   +1 more source

The Noise Performance of a Multiple-Input-Port and Multiple-Output-Port Low-Noise Amplifier Connected to an Array of Coupled Antennas

open access: yesInternational Journal of Antennas and Propagation, 2011
We address the noise characterization of a multiple-input-port and multiple-output-port (MIPMOP) device receiving signals from an array of antennas.
Frédéric Broydé, Evelyne Clavelier
doaj   +1 more source

Multi-element fiber for space-division multiplexing [PDF]

open access: yes, 2013
A novel approach of using multi-element fiber (MEF) technology in space-division multiplexing (SDM) systems is presented. This paper reviews the progress in fabrication and characterization of MEF based both ultra-low crosstalk transmission and amplifier
V. J. F. Rancaño   +13 more
core   +1 more source

All‐Solution‐Processed HgTe Quantum Dot Photodetectors for Extended Short‐Wavelength Infrared Range Enhanced by Plasmonic ITO Nanocrystals

open access: yesAdvanced Functional Materials, EarlyView.
All‐solution‐processed, low‐cost extended short‐wavelength infrared photodetectors are realized by coupling colloidal HgTe quantum dots to plasmonic In2O3:Sn,F nanocrystals. Localized surface plasmon resonances boost and spectrally tailor light absorption between 1500 and 3000 nm, enabling responsivities above 40 A W−1.
Kseniia A. Sergeeva   +9 more
wiley   +1 more source

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