Results 101 to 110 of about 9,592,304 (290)

Flexible linearity profile low noise feedforward amplifiers for improving channel capacity [PDF]

, 2003
This paper describes a highly linear low noise amplifier (LNA) exhibiting a flexible linearity profile intended as a way to meet future flexible mobile communications standards.
Watkins, GT, Warr, PA
core  

Sub‐1 ms Optoelectronic Synapse Based on {ZnCdO/ZnO} Multilayer Structure for High‐Speed Neuromorphic Vision Systems

Advanced Functional Materials, EarlyView.
Eu‐doped {ZnCdO/ZnO} structures grown on Si are developed, showcasing dual‐functionality controlled by europium doping. While high europium concentration transforms the device into an ultrafast, self‐powered photodetector, low‐doped structures can be used as an optoelectronic synapse.
Igor Perlikowski, Eunika Zielony, Adrian Kaim, Ewa Przeździecka   +3 more
wiley   +1 more source

Amplifier circuit for a silicon-photomultiplier-coupled plastic scintillator detector

He jishu
BackgroundThe silicon photomultiplier (SiPM) is sensitive to environmental noise, its performance is greatly affected by ambient noise.PurposeThis study aims to design a negative-feedback selective amplifier circuit for SiPM coupled plastic scintillator ...
TANG Chenyang, CHEN Xinnan, GAO Chunyu, LI Yupeng, WANG Xiao, TANG Xiuzhang   +5 more
doaj   +1 more source

Low-noise Amplifier for Neural Recording [PDF]

, 2015
With a combination of engineering approaches and neurophysiological knowledge of the central nervous system, a new generation of medical devices is being developed to link groups of neurons with microelectronic systems.
Srivastava, Rachna
core  

Circularly Polarized Electroluminescence and Spin‐Polarized Carrier Transport in Chiral‐Doped Polymer Films

Advanced Functional Materials, EarlyView.
Chiral dopants induce supramolecular chirality in an achiral polymer (PFO), generating spin‐polarized carriers via the chiral‐induced spin selectivity (CISS) and suggesting a possible contribution of Spin‐polarized carrier transport to circularly polarized electroluminescence (CPEL).
Kazuyuki Asahi, Masashi Hasegawa, Yuuya Nagata, Tamaki Nakano, Hiroyuki Nishikawa   +4 more
wiley   +1 more source

Wideband SiGe-HBT Low-Noise Amplifier with Resistive Feedback and Shunt Peaking. [PDF]

Sensors (Basel), 2023
Song I, Ryu G, Jung SH, Cressler JD, Cho MK.   +4 more
europepmc   +1 more source

A 3-8 GHz low-noise CMOS amplifier

, 2009
A wideband CMOS low-noise amplifier (LNA) is
Boon, Chirn Chye, Do, Manh Anh, Yeo, Kiat Seng, Meaamar, Ali   +3 more
core   +1 more source

Full‐Field Damage Monitoring in Architected Lattices Using In situ Electrical Impedance Tomography

Advanced Functional Materials, EarlyView.
In situ electrical impedance tomography (EIT) turns 3D‐printed, CNT‐infused architected lattices into full‐field damage‐imaging systems. Tunable Voronoi‐based geometries act as active sensing architectures, enabling conductivity maps to detect early‐stage damage and localise sequential ligament fracture before catastrophic failure.
Akash Deep, Andrea Samore, Alistair McEwan, Andrew McBride, Shanmugam Kumar   +4 more
wiley   +1 more source

Artificial Neural Network Modeling of a CMOS Differential Low-Noise Amplifier Using the Bayesian Regularization Algorithm. [PDF]

Sensors (Basel), 2023
Subburaman B, Thangaraj V, Balu V, Pandyan UM, Kulkarni J.   +4 more
europepmc   +1 more source

Cryogenic InAs/AlSb HEMT Wideband Low-Noise IF Amplifier for Ultra-Low-Power Applications

, 2012
A cryogenic wideband 4-8 GHz hybrid low-noise amplifier, based on a 110 nm gate length InAs/AlSb HEMT process is presented. At room temperature the three-stage amplifier exhibited a transducer gain of 29 dB and a noise temperature of 150 K with 17.6 mW ...
Moschetti, G., Nilsson, P.A., Grahn, J., Wallart, X., Grahn, Jan, Abbasi, M., Abbasi, Morteza,, Nilsson, Per-Åke,, Wallart, X.,, Moschetti, Giuseppe, Desplanque, L., Wadefalk, N., Desplanque, L.,, Grahn, Jan,, Wadefalk, Niklas, Moschetti, Giuseppe,, Wadefalk, Niklas,, Nilsson, Per-\uc5ke, Nilsson, Per-Åke, Abbasi, Morteza   +19 more
core   +1 more source