Results 91 to 100 of about 14,704,035 (301)

Clustomesogen Showing Sub‐Zero Liquid Crystal Properties: Supramolecular Assembly Between Cs2[Mo6Ii8(OCOC2F5)6] and Hexaethylenoxide Containing Mesogenic Dimers

open access: yesAdvanced Materials, EarlyView.
Associating a red‐NIR phosphorescent octahedral hexanuclear molybdenum cluster compound with hexaethyleneoxide chains bearing mesogenic units on both ends leads to an emissive hybrid liquid crystal showing mesomorphism on a very unusual temperature range down to −25°C.
Killiann Heinz   +11 more
wiley   +1 more source

An ultra-low power CMOS random number generator

open access: yes, 2008
This paper proposes an ultra-low power CMOS random number generator (RING), which is based on an oscillator-sampling architecture. The noisy oscillator consists of a dual-drain MOS transistor, a noise generator and a voltage control oscillator.
Zhang, W   +3 more
core  

RTS noise impact in CMOS image sensors readout circuit [PDF]

open access: yes, 2009
CMOS image sensors are nowadays widely used in imaging applications even for high end applications. This is really possible thanks to a reduction of noise obtained, among others, by Correlated Double Sampling (CDS) readout.
P. Magnan   +3 more
core   +1 more source

Advances in Bio‐Integrated Edge Computing Systems for Smart and Connected Health

open access: yesAdvanced Materials, EarlyView.
This review explores advances in bio‐integrated edge computing for healthcare, focusing on co‐designing computing, sensing, and energy strategies to overcome integration and power challenges for optimized, decentralized operation. ABSTRACT Recent advances in bio‐integrated healthcare technologies have enabled continuous, high‐resolution monitoring and ...
Gyuwon Kim   +4 more
wiley   +1 more source

A 0.6 V low-power 3.5 GHz CMOS low noise amplifier for WiMAX applications

open access: yes, 2013
[[abstract]]In this letter, a low-voltage and low-power 3.5-GHz low noise ampli?er (LNA) is designed and fabricated using TSMC 0.18-lm MS/RF complementary metal-oxide-semiconductor ?eld effect transistor (CMOS) technology.
Jeng-Han Tsai;Yi-Jhang Lin;Hao-Chun Yu
core  

Near‐Infrared Imaging of H2O2 in Plants With Nanosensors Under Environmentally Changing Conditions

open access: yesAdvanced Materials, EarlyView.
This paper reports a ratiometric nanosensor enabling robust, multivariate detection of stress signals (H2O2) in plants, with high resistance to light fluctuations and mechanical disturbances. Single‐walled carbon nanotubes serve as the sensor, Egyptian Blue nanosheets serve as a stable reference, and plant autofluorescence serves as a label‐free ...
Jiaqi Li   +8 more
wiley   +1 more source

Blending With Insulating Polymers Enables Stable Anti‐Ambipolar Characteristics in n‐Type Organic Mixed‐Conductors for Heterogeneous Spiking Neurons

open access: yesAdvanced Materials, EarlyView.
A polymer blend of n‐type OMIEC P(gNDI‐gT2) with insulating PMMA yields mechanically stabilized, anti‐ambipolar organic electrochemical transistors (OECTs) with tunable ionic‐electronic transport. This blending allows low‐power, fast‐spiking heterogeneous Hodgkin–Huxley neurons, enabling biomimetic frequency deconvolution and reservoir computing, which
Zachary Laswick   +12 more
wiley   +1 more source

Highly Efficient Functionalization of hBN With Lithium Oxalate: A Multifunctional Platform for Composites, Ion Transport, and Spin Labeling

open access: yesAdvanced Materials, EarlyView.
Mechanochemical functionalization of hexagonal boron nitride with lithium oxalate produces LBNCO (Li2(BN)6C2O4${\mathrm{Li}}_{2}{\operatorname{(}\mathrm{BN})}_{6}{\mathrm{C}}_{2}{\mathrm{O}}_{4}$), a layered, intrinsically lithiated material that combines Li+${\rm Li}^+$ transport with high thermal stability and persistent paramagnetic centers.
Bence G. Márkus   +20 more
wiley   +1 more source

Comparison of ultra-low-power and static CMOS full adders in 0.15 mu m FD SOI CMOS

open access: yes, 2009
Ultra-low-power and static CMOS full adders are implemented in a 0.15 mu m FD SOI CMOS technology with 1.5 V supply. The power consumption of ultra-low-power full adder is shown to be half that of static CMOS.
D. Kamel   +8 more
core   +1 more source

A Low-Power Voltage Limiter/Regulator IC in Standard Thick-Oxide 130 nm CMOS for Inductive Power Transfer Application [PDF]

open access: yes, 2014
This paper presents a novel CMOS low-power voltage limiter/regulator circuit with hysteresis for inductive power transfer in an implanted telemetry application.
Lapshev S, Hasan SMREZAUL
core   +1 more source

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