Results 111 to 120 of about 14,704,035 (301)
A 12 dB 0.7 V 𝟖𝟓𝟎𝝁W CMOS LNA for 866 MHz UHF RFID Reader
Active and Passive Electronic Components, 2010 The design of a narrow-band cascode CMOS inductive source-degenerated low noise amplifier (LNA) for 866 MHz UHF RFID reader is presented. Compared to other previously reported narrow-band LNA designs, in this paper the finite 𝑔ds (=1/𝑟0) effect has been
Jie Li, S. M. Rezaul Hasan
doaj +1 more source
Magnetoelectric Multiferroics for the Next-Generation Ultralow-Power Electronics. [PDF]
Adv Sci (Weinh)Magnetoelectric coupling provides a unifying route from electric‐field control of magnetic order to non‐volatile MeRAM, MESO logic, and emerging antiferromagnetic and magnonic devices. By connecting switching physics with device benchmarks, material platforms, and integration strategies, distinctive technological opportunities are identified alongside ...
Liu Y +13 more
europepmc +2 more sources
Wafer‐Scale Top‐Down Patterning of Metal Halide Perovskites
Advanced Materials Technologies, EarlyView.Wafer‐scale patterning of metal halide perovskite films is demonstrated on 150 mm substrates using a chemically amplified resist, polymethyl methacrylate (CAR‐PMMA) and a single reactive ion etching step. The streamlined process preserves film luminescence while defining submicrometer features across the full wafer, enabling dense, scalable integration
Federico Fabrizi +7 more
wiley +1 more source
Low-frequency noise impact on CMOS image sensors [PDF]
, 2009 CMOS image sensors are nowadays extensively used in imaging applications even for high-end applications. This is really possible thanks to a reduction of noise obtained, among others, by Correlated Double Sampling (CDS) readout.
Magnan, Pierre +1 more
core
A 6-Transistor Ultra-Low Power CMOS Voltage Reference with 0.02%/V Line Sensitivity. [PDF]
Proc Cust Integr Circuits Conf, 2020 Bialek H, Johnston ML, Natarajan A.
europepmc +1 more source
Vertical Gate‐All‐Around SiGeSn/GeSn/SiGeSn Nanowire Transistors for Energy‐Efficient Electronics
Advanced Materials Technologies, EarlyView.Band‐engineered SiGeSn/GeSn/SiGeSn heterostructures enable complementary vertical nanowire MOSFETs and steep slope tunnel FETs (TFETs) within a unified Group‐IV platform. Leakage suppression and tunnelling‐path engineering demonstrate an effective strategy for future low‐power and energy‐efficient integrated electronics.
Kenta Moto +9 more
wiley +1 more source
A 51 to 65 GHz low-power bulk-pumped mixer using 0.13-?m CMOS Technology
, 2013 [[abstract]]A low-voltage and low-power down-conversion bulk-driven mixer using standard 0.13 mum CMOS technology is presented in this letter. To work on a low supply voltage and low power consumption applications while maintaining reasonable performance,
Che-Yu Wang;Jeng-Han Tsai
core
Red‐Light Tomographic Volumetric 3D Printing in Seconds for Fabrication of Colorless Structures
Advanced Materials Technologies, EarlyView.A custom red‐light‐responsive TVAM platform combines methylene blue, triethanolamine, and PEGDA to fabricate transparent crosslinked hydrogels. Light patterns are projected into a rotating resin container, where a sacrificial photoinitiator system enables rapid polymerization and colorless channel‐containing structures, utilizing low‐energy light for ...
Ali Eftekhari +9 more
wiley +1 more source
Design of Low Power Phase Detector in 0.13 um CMOS [PDF]
Journal of Electrical and Electronics Engineering, 2017 This paper presents a designed of Phase Detector (PD) which applied into the Phase Locked Loop (PLL) circuits which commonly used in the system of communication.
RAHMAN F. Labonnah +3 more
doaj
Advanced Optical Materials, EarlyView.Naphthopyran–benzophenone compounds can act simultaneously as photoinitiators and photochromic molecules for two‐photon polymerization. Using a single‐step process, liquid photoresist is encapsulated within polymerized 3D microstructures, preserving reversible UV–vis photochromism after fabrication.
João P. Leote +5 more
wiley +1 more source