Results 191 to 200 of about 22,126 (267)

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

Advanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer   +12 more
wiley   +1 more source

A High-Performance Ultraviolet Optical Sensing System for Rotating Detonation Extreme Combustion. [PDF]

Sensors (Basel)
Dai W, Shi Y, Ma J, Bu M, Wang L, Xie Q, Wen H, Wang B.   +7 more
europepmc   +1 more source

Millisecond‐Scale Relaxation in Metastable HZO Ferroelectric Capacitors for Bio‐Inspired Temporal Computing

Advanced Electronic Materials, EarlyView.
Through the introduction of a niobium oxide layer into a hafnia ferroelectric capacitor stack, we build a memory device with a strong imprint effect. This imprint leads to a millisecond retention loss that can be tuned by the programming conditions that can be utilized as a scalable, analog hardware time constant for bio‐inspired temporal computing ...
Luca Fehlings, Thomas Mikolajick, Beatriz Noheda, Erika Covi   +3 more
wiley   +1 more source

Logic Gates Based on Skyrmions. [PDF]

Nanomaterials (Basel)
Shu Y, Li Q, Zhang W, Peng Y, Lai P, Zhao G.   +5 more
europepmc   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Sub-THz communication systems: pushing the capabilities of silicon. [PDF]

Commun Eng
Gruber J, Alotaibi H, Tabatabavakili A, Chen L, Aghasi H, Naghavi SMH, Afshari E.   +6 more
europepmc   +1 more source

Ultra‐Low Power Consumption and Highly Durability in Sm:HfO2 Thin Film Ferroelectric Memristor for Edge Detection

Advanced Electronic Materials, EarlyView.
ABSTRACT With the continuous development of computer image processing, developing efficient and low‐power computing devices has become a key challenge. Memristors have integrated in‐situ storage and computing capabilities, making them an ideal choice for low‐power image processing computing architectures. However, current memristors are confronted with
Tengyu Li, YongRui Wang, Weifeng Zhang, Jikang Xu, Xiaobing Yan   +4 more
wiley   +1 more source

Hafnium-Based Ferroelectric Post-Moore Electronics: Device Physics, Integration Architectures, and Neuromorphic System Implementation. [PDF]

Nanomicro Lett
Chen X, Wang Z, Meng J, Wang T.
europepmc   +1 more source

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

Advanced Electronic Materials, EarlyView.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol, Nikhil Garg, Matteo Mazza, Yanming Zhang, Elisa Zaccaria, Wooseok Choi, Bert Jan Offrein, Laura Bégon‐Lours   +7 more
wiley   +1 more source

People Counting and Positioning Using Low‐Resolution Infrared Images for FeFET‐Based In‐Memory Computing

Advanced Electronic Materials, EarlyView.
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar, Li Zhang, Alexander Rehmer, Marc Lupp, Subhashree Baskaran, Osama Abdelaal, Franz Müller, Nandakishor Yadav, Bing Li, Thomas Kämpfe   +9 more
wiley   +1 more source