Results 171 to 180 of about 22,126 (267)

Photo‐Gated Corona Microfluidics

Advanced Science, EarlyView.
Photo‐gated corona microfluidics decouples optical programming from electric‐field actuation to enable reconfigurable manipulation on open, electrode‐pattern‐free surfaces. Near‐infrared irradiation locally melts paraffin, creating a reversible charge‐relaxation pathway that reconstructs the electric field.
Xiaxia Cui, Yiqing Liu, Xinyi Qiu, Manfei Liu, Biao Cheng, Yuan Zhou, Changguo Xue, Sheng Zhang, Xin Tang, Qiang Tang   +9 more
wiley   +1 more source

Multi-Point Laser Detection Device for Ground Hazards in Blind Mobility. [PDF]

Sensors (Basel)
Berthe I, Bogaert L, Jordan L, Donnez J, Favey C, Farcy R.   +5 more
europepmc   +1 more source

Differential Tissue‐Coupled Powering for Battery‐Free Injectable Electroceuticals

Advanced Science, EarlyView.
A thread‐like injectable neural stimulator is powered through differential tissue‐coupled powering (DTCP), which harvests RF‐frequency tissue potentials with an elongated receiver while preserving a injectable cross‐section. The system integrates an ASIC, stimulation electrodes, and a portable transmitter, enabling wireless peripheral nerve stimulation,
Han Wu, Sultan Mahmud, Mali Halac, Asif Iftekhar Omi, Domenica Sofia Baez Rodas, Jeremiasz Dados, Chaojun Cheng, Anyu Jiang, Cameron Wallace, Anvi Singh, Erin Patrick, Baibhab Chatterjee, Shriya Srinivasan, Adam Khalifa   +13 more
wiley   +1 more source

Three-phase ScAlN-based PMUT-driven acoustic streaming micropump. [PDF]

Microsyst Nanoeng
Wu C, Keulemans G, Jones B, Rottenberg X, Rochus V, Heremans P.   +5 more
europepmc   +1 more source

Porous Ultralow‐κ sp2‐Bonded Boron Nitride Thin Films as Copper Diffusion Barriers

Advanced Science, EarlyView.
Porous sp2‐bonded boron nitride (p‐BN) thin films with an ultralow dielectric constant (κ = 1.77) are directly grown on Si substrates via RF magnetron sputtering. The films feature uniform nanopores (1.85 nm), high mechanical stability, hydrophobicity, and excellent Cu diffusion barrier performance even at 3 nm thickness, offering a promising solution ...
Caiyun Liu, Ze Long, Zhongyuan Han, Yingying Guo, Yuning Ding, Tianhao Guo, Yuting Tang, Runzhi An, Haoran Ma, Jishan Liu, Hongwei Liang, Hong Yin   +11 more
wiley   +1 more source

A DTMOS-Based Memristor Emulator Circuit for Low-Power Biomedical Signal Conditioning. [PDF]

Micromachines (Basel)
Barraj I.
europepmc   +1 more source

Optically Tunable Threshold Switching and Thermally Activated Transport in Planar Ag/MAPbI3 Thin Single‐Crystal Devices

Advanced Science, EarlyView.
Planar Ag/MAPbI3 thin single‐crystal halide perovskite devices show ultralow dark current and optically tunable threshold switching. Illumination enhances the polarity‐dependent hysteresis and shifts the switching voltage, whereas temperature‐dependent measurements reveal thermally activated, contact‐limited transport, underscoring the central role of ...
Ofelia Durante, Valeria Demontis, Sebastiano De Stefano, Selene Matta, Adolfo Mazzotti, Daniela Marongiu, Emanuele Meloni, Elisa Pili, Fang Liu, Nicola Sestu, Angelica Simbula, Mauro Carta, Michele Saba, Andrea Mura, Massimiliano Di Ventra, Giovanni Bongiovanni, Antonio Di Bartolomeo   +16 more
wiley   +1 more source

A Low-Noise, Low-Power, and Wide-Bandwidth Regulated Cascode Transimpedance Amplifier with Cascode-Feedback in 40 nm CMOS. [PDF]

Sensors (Basel)
Zhang X, Zhao Y, Yu G, Lu Z, Wang C.
europepmc   +1 more source

RRAM Variability Harvesting for CIM‐Integrated TRNG

Advanced Electronic Materials, EarlyView.
This work demonstrates a compute‐in‐memory‐compatible true random number generator that harvests intrinsic cycle‐to‐cycle variability from a 1T1R RRAM array. Parallel entropy extraction enables high‐throughput bit generation without dedicated circuits. This approach achieves NIST‐compliant randomness and low per‐bit energy, offering a scalable hardware
Ankit Bende, Gokulnath Rajendran, Regina Dittmann, Anupam Chattopadhyay, Vikas Rana   +4 more
wiley   +1 more source

An energy-efficient Flash-SAR ADC with two-step flash structure in a 0.18 μm CMOS process. [PDF]

Sci Rep
Xue S.
europepmc   +1 more source