Results 221 to 230 of about 14,704,035 (301)

A Water Compartment Cell Culture Lid Enables Stable Longitudinal Recording of Neuronal Networks In Vitro

open access: yesAdvanced Science, EarlyView.
A cell culture lid with an integrated water compartment eliminates evaporation from microelectrode arrays while preserving gas exchange. Freed from the osmotic drift and repeated medium exchanges that disturb conventional recordings, patterned human iPSC‐derived neuronal networks are recorded continuously for five weeks. Single‐spike resolution reveals
Benedikt Maurer   +4 more
wiley   +1 more source

Negative Gauge Factor Piezoresistance in Soft Strain and Pressure Sensors: Mechanisms, Materials, and Emerging Applications

open access: yesAdvanced Science, EarlyView.
Negative‐gauge‐factor materials reverse the usual rule of piezoresistive sensing: their resistance falls, rather than rises, under deformation. This review organizes such behavior into four mechanistic classes spanning intrinsic semiconductors, composites, conducting polymers, and engineered architectures.
Su‐Hyeong Lee   +2 more
wiley   +1 more source

Chip‐Level Voltage Controlled Magnetic p‐Bits Array with Variation Compensation for Stochastic Neural Network Computation

open access: yesAdvanced Science, EarlyView.
A chip‐level VCMA‐MTJ array is demonstrated for stochastic neural‐network computing. Combined with a tail‐truncation strategy to compensate for device‐to‐device variations, it establishes a hardware–software co‐design approach for scalable probabilistic computing.
Jiachen Bao   +15 more
wiley   +1 more source

Space‐Charge‐Driven Nonlinear Charge Transport in Silicon Reconfigurable Nonlinear‐Processing Units

open access: yesAdvanced Science, EarlyView.
Many approaches to AI hardware focus on accelerating linear operations, yet nonlinearity underpins computational expressivity. Reconfigurable nonlinear‐processing units (RNPUs) are promising computational primitives that provide nonlinear transformations directly in hardware.
Jonas Kareem   +6 more
wiley   +1 more source

Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses

open access: yesAdvanced Electronic Materials, EarlyView.
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj   +3 more
wiley   +1 more source

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