Results 11 to 20 of about 753,454 (265)
Design and Characterization of a Burst Mode 20 Mfps Low Noise CMOS Image Sensor
Sensors, 2023 This paper presents a novel ultra-high speed, high conversion-gain, low noise CMOS image sensor (CIS) based on charge-sweep transfer gates implemented in a standard 180 nm CIS process.
Xin Yue, Eric R. Fossum
doaj +1 more source
Threshold Uniformity Improvement in 1b Quanta Image Sensor Readout Circuit
Sensors, 2022 A new readout architecture for single-bit quanta image sensor (QIS) consisting of a capacitive transimpedance amplifier (CTIA) before a 1-bit quantizer to improve the threshold uniformity of the readout cluster is proposed in this paper.
Zhaoyang Yin +3 more
doaj +1 more source
A 0.5-V Four-Stage Amplifier Using Cross-Feedforward Positive Feedback Frequency Compensation
Chips, 2023 This paper presents a low-voltage CMOS four-stage amplifier operating in the subthreshold region. The first design technique includes the cross-feedforward positive feedback frequency compensation (CFPFC) for obtaining better bandwidth efficiency in a ...
Feifan Gao, Pak Kwong Chan
doaj +1 more source
Single Stage Low Noise Inductor-Less TIA for RF Over Fiber Communication
IEEE Access, 2021 This paper presents design, mathematical analysis, and measurement of low noise single-stage transimpedance amplifier (TIA) with scalable bandwidth using 130 nm bipolar complementary metal-oxide-semiconductor (BiCMOS) silicon-germanium (SiGe) process ...
Vijay Kumar +3 more
doaj +1 more source
AIP Advances, 2019 The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the preferred active device used in a cryogenic low noise amplifier (LNA) for sensitive detection of microwave signals. We have investigated the angular dependence of the InP HEMT when
Isabel Harrysson Rodrigues +6 more
doaj +1 more source
Temporal Noise Analysis of Charge-Domain Sampling Readout Circuits for CMOS Image Sensors
Sensors, 2018 This paper presents a temporal noise analysis of charge-domain sampling readout circuits for Complementary Metal-Oxide Semiconductor (CMOS) image sensors. In order to address the trade-off between the low input-referred noise and high dynamic range, a Gm-
Xiaoliang Ge, Albert J. P. Theuwissen
doaj +1 more source
Journal of Low Power Electronics and Applications, 2023 This paper presents a capacitively coupled chopper instrumentation amplifier (CCIA) with ultra-low power consumption and programmable bandwidth for biomedical applications.
Xuan Thanh Pham +2 more
doaj +1 more source
The Wavelength-Shifting Optical Module
Sensors, 2022 The Wavelength-shifting Optical Module (WOM) is a novel photosensor concept for the instrumentation of large detector volumes with single-photon sensitivity.
Benjamin Bastian-Querner +15 more
doaj +1 more source
The masking-level difference in low-noise noise.
The Journal of the Acoustical Society of America, 1996 The masking-level difference for a 500-Hz pure tone signal was examined for an interaurally in-phase noise having different degrees of power fluctuations. MLDs were reliably smaller in noise having relatively low power fluctuations. This effect was due to the following trends in the threshold data. (1) For all subjects, the So threshold improved as the
J W, Hall, J H, Grose, W M, Hartmann
openaire +3 more sources
Sensors, 2017 This paper presents a novel full-depletion Si X-ray detector based on silicon-on-insulator pixel (SOIPIX) technology using a pinned depleted diode structure, named the SOIPIX-PDD.
Hiroki Kamehama +7 more
doaj +1 more source