Results 21 to 30 of about 753,454 (265)

Low Noise Balanced Homodyne Detector for Quantum Noise Measurement

IEEE Access, 2022
The research of quantum noise in the interaction of laser and atoms plays a critical role in quantum optical experiments. The measurement of quantum noise is mainly based on the balanced homodyne detection method.
Shubo Lang, Shicheng Zhang, Xiaolin Li, Yueping Niu, Shangqing Gong   +4 more
doaj   +1 more source

Investigation of Noise Properties in the InP HEMT for LNAs in Qubit Amplification: Effects From Channel Indium Content

IEEE Journal of the Electron Devices Society
The InP high-electron-mobility transistor (HEMT) is employed in cryogenic low-noise amplifiers (LNAs) for the readout of faint microwave signals in quantum computing.
Junjie Li, Johan Bergsten, Arsalan Pourkabirian, Jan Grahn   +3 more
doaj   +1 more source

Flow structure and unsteady characteristics of fountain flow induced by dual impinging jets

Kongqi donglixue xuebao
The flow-field structure and mechanical characteristics of dual impinging jets are critical issues during the takeoff and landing phases of aircraft. However, the unsteady characteristics of the fountain effect induced by dual impinging jets have not yet
Yifan Zhao, Rongping Zhang, Rongping Zhang, Yuxiang Liang, Yuxiang Liang, Jiaxi Zhao, Jiaxi Zhao, Xunnian Wang   +7 more
doaj   +1 more source

Appraisal of a low noise electrocardiogram

Journal of the American College of Cardiology, 1983
Two low noise electrocardiographic systems were designed to record low amplitude His-Purkinje potentials in the PR segment and delayed depolarization potentials in the ST-T segment from the body surface on a beat to beat basis. In one system, a bipolar electrode was utilized and the noise level was optimally reduced to 2 to 2.5 microV by a combination ...
El-Sherif, Nabil, Mehra, Rahul, Gomes, J.A.C., Kelen, George   +3 more
openaire   +2 more sources

Low-frequency noise in nanowires

Nanoscale, 2023
This paper reviews 40 years of research on low-frequency noise and random-telegraph noise in metallic and semiconducting nanowires.
openaire   +2 more sources

Investigating transcription factor dynamics in health and disease using FRAP

FEBS Letters, EarlyView.
FRAP analysis of GFP‐tagged transcription factors reveals how molecular mobility and target engagement change in response to drug treatment. By combining live‐cell imaging, quantitative model fitting, and statistical analysis, this approach uncovers transcription factor dynamics linked to disease mechanisms, providing a powerful framework for ...
Kannan Govindaraj, Carolina Vazquez Garzon, Jose Joaquin Velasco, Janine N. Post   +3 more
wiley   +1 more source

Design and Analysis of Low-Power Ultra-Wideband CMOS Variable-Gain LNAs With Sub-2.5 dB NF_min Using Coupled Microstrip-Line Neutralization and AGF-Inductor

IEEE Access
This study reports low power-dissipation (PD) and low noise-figure (NF) ultra-wideband CMOS variable-gain amplifiers (VGAs). VGA1 and VGA2 use coupled microstrip-line (CL) neutralization with an adjustable-gain-flatness inductor and multiple inductive ...
Jin-Fa Chang
doaj   +1 more source

Ligand‐dependent transcriptional heterogeneity in cell cycle gene expression delays G1/S entry

FEBS Letters, EarlyView.
EGF and HRG induce distinct G1/S progression programs in ErbB2‐amplified BT474 breast cancer cells. Despite activating the potent ErbB2–ErbB3 heterodimer, HRG does not accelerate cell‐cycle entry. Instead, EGF promotes earlier restriction‐point passage via ERK–FOS signaling, whereas HRG activates the AKT–MYC axis, driving transcriptional heterogeneity ...
Ririn Rahmala Febri, Ayaka Nagasato‐Ichikawa, Keita Iida, Shuhei Kimura, Akira Imamoto, Mariko Okada   +5 more
wiley   +1 more source

A 35 nV/√Hz Analog Front-End Circuit with Adjustable Bandwidth and Gain in UMC 40 nm CMOS for Biopotential Signal Acquisition

Sensors
This paper presents a 35 nV/√Hz analog front-end (AFE) circuitdesigned in the UMC 40 nm CMOS technology for the acquisition of biopotential signal. The proposed AFE consists of a capacitive-coupled instrumentation amplifier (CCIA) and a combination of a ...
Lu Liu, Bin Wang, Yiren Xu, Xiaokun Lin, Weitao Yang, Yinglong Ding   +5 more
doaj   +1 more source

A Stacked Back Side-Illuminated Voltage Domain Global Shutter CMOS Image Sensor with a 4.0 μm Multiple Gain Readout Pixel

Sensors, 2020
A backside-illuminated complementary metal-oxide-semiconductor (CMOS) image sensor with 4.0 μm voltage domain global shutter (GS) pixels has been fabricated in a 45 nm/65 nm stacked CMOS process as a proof-of-concept vehicle.
Ken Miyauchi, Kazuya Mori, Toshinori Otaka, Toshiyuki Isozaki, Naoto Yasuda, Alex Tsai, Yusuke Sawai, Hideki Owada, Isao Takayanagi, Junichi Nakamura   +9 more
doaj   +1 more source