Results 91 to 100 of about 9,592,257 (290)

60 GHz low noise amplifier for low power

, 2011
As the first active component of a receiver, low noise amplifier plays an important role to amplify the weak signals for subsequent stages and to minimize the overall noise figure of the receiver’s front-end.
Jiang, Pengfei
core  

Tracking Battery Microstructural Degradation Through Directional Thermal Transport Signatures

Advanced Functional Materials, EarlyView.
In lithium‐ion batteries, heat conduction varies between the through‐plane and in‐plane directions because of the cell's layered structure. Therefore, cell degradation influences thermal conductivity in each direction uniquely due to detailed microstructural and compositional changes.
Mohammad Shoghi Tekmedash, Rituparna Mohanty, Jack Leber, David Nageb, Mirella Richard, Sharan Singh, Amin Reihani   +6 more
wiley   +1 more source

Low Power Ultra‐Wideband Low‐Noise Amplifier for UWB Receiver

Engineering Reports
In this paper, a 4‐13GHz low power low‐noise amplifier (LNA) for UWB based on two‐stage topology is presented. Wideband matching, low noise figure (NF), and low power are achieved by using a gate inductor‐assisted impedance matching and a current reuse ...
Haimei Liu, Xiangqian Liu, Bilu Gao
doaj   +1 more source

The Noise Performance of a Multiple-Input-Port and Multiple-Output-Port Low-Noise Amplifier Connected to an Array of Coupled Antennas

International Journal of Antennas and Propagation, 2011
We address the noise characterization of a multiple-input-port and multiple-output-port (MIPMOP) device receiving signals from an array of antennas.
Frédéric Broydé, Evelyne Clavelier
doaj   +1 more source

Dirac‐Source Linear X‐Ray Detection Diode

Advanced Functional Materials, EarlyView.
Monolayer graphene imparts near linear current‐voltage behavior to a perovskite X‐ray detection diode, contrasting with conventional diode‐like responses. Exploiting graphene's Dirac dispersion and a Schottky‐like back‐to‐back junction, the device achieves six‐orders‐of‐magnitude dark current suppression while retaining linearity over 200 V, enabling ...
Babar Shabbir, Shoaib Masood, Jialu Li, R. A. W. Ayyubi, Naeimeh Mozaffari, Mosarof Hossain, Nasir Mahmood, Muhammad Nadeem, Jacek J. Jasieniak   +8 more
wiley   +1 more source

JFET-Input Ultralow-Noise Amplifier for Low-Frequency Noise Measurements

IEEE Open Journal of Instrumentation and Measurement
Low-frequency noise measurements are essential for the characterization of electronic devices, sensors, and materials, as they provide insight into physical mechanisms, device quality, and long-term stability.
Graziella Scandurra, Emanuele Cardillo, Luigi Ferro, Gino Giusi, Carmine Ciofi   +4 more
doaj   +1 more source

A very low noise instrumentation amplifier for biomedical applications

, 1986
An instrumentation amplifier for use in medical, biological and electrophysiological measurements is described. It is a very low cost, high performance, FET input amplifier, its outstanding characteristic being a very low noise level, of the order of one
M. BERTOLACCINI, PADOVINI, GIORGIO MICHELE   +1 more
core  

An Epigenetic Fate Converter Based on Nuclei‐Targeting Lipid Nanoparticles Drives Neuronal Programming of Stem Cells for Spinal Cord Repair

Advanced Functional Materials, EarlyView.
Schematic illustration of LNP‐MPG nuclei‐targeting delivery of HMW‐FGF2 promoting histone acetylation to regulate the fate of DPSCs and treat spinal cord injury. LNPs components include pHMW‐FGF2 plasmid, DSPC, Dlin‐MC3‐DMA, cholesterol, and PEG2000, and are modified with MPG to form HMW‐FGF2@LNP‐MPG (HLM). HLM nuclei‐targets DPSCs to deliver HMW‐FGF2,
Heng Zhou, Qiang Qin, Xiqin Li, Hanyu Ding, Chun Xu, Yan He, Qingsong Ye   +6 more
wiley   +1 more source

An Adaptive Inhibitory WSe2 Transistor for Retinomorphic In‐Sensor Image Processing

Advanced Functional Materials, EarlyView.
Conventional retinomorphic devices typically require deliberate gate‐bias tuning for each illumination condition. In this paper, we demonstrate an adaptive inhibitory WSe2 transistor that uses photo‐induced regime shift between the subthreshold and accumulation modes to achieve decision‐free, intensity‐adaptive image processing within a single pixel ...
Juhwan Baek, Junhwa Oh, Hyeonjung Kim, Minsik Park, Haein Cho, Jin Young Park, Hyeonchang Son, Taeyun Kim, Sung‐Un An, Yamin Zhang, Hyeon‐Jin Shin, Seyong Oh, Dong‐Ho Kang   +12 more
wiley   +1 more source