Results 81 to 90 of about 64,276 (298)

Electrified Damage in Motion Systems

open access: yesAdvanced Engineering Materials, EarlyView.
The electrified damage in motion systems is a fundamental framework presenting the degradation pathway arising from the coupling of electrical energy transport with mechanical contact and interfacial chemistry. The framework positions electrified damage as a distinct degradation regime with unique characteristic surface morphologies and failures of ...
M. Humaun Kabir   +2 more
wiley   +1 more source

HEMT Noise Modeling for D Band Low Noise Amplifier Design

open access: yesIEEE Journal of the Electron Devices Society
An improved EEHEMT nonlinear model with noise model has been developed in this paper. Empirical formulas of bias dependent noise model parameters are given.
Ao Zhang, Jianjun Gao
doaj   +1 more source

A 2.4/5.2-GHz Concurrent Dual-Band CMOS Low Noise Amplifier

open access: yesIEEE Access, 2017
A concurrent dual-band low-noise amplifier (LNA) targeted for W-LAN IEEE 802.11 a/b/g standards is designed using 0.13-μm CMOS process. To attain the power-constrained simultaneous noise and input matching at 2.4 and 5.2 GHz, cascode common source
Sami Sattar, Tun Zainal Azni Zulkifli
doaj   +1 more source

Low-Noise Multimodal Reconfigurable Sensor Readout Circuit for Voltage/Current/Resistive/Capacitive Microsensors

open access: yesApplied Sciences, 2020
This paper presents a low-noise reconfigurable sensor readout circuit with a multimodal sensing chain for voltage/current/resistive/capacitive microsensors such that it can interface with a voltage, current, resistive, or capacitive microsensor, and can ...
Donggeun You   +10 more
doaj   +1 more source

Theory and optimisation of double conversion heterodyne photoparametric amplifier [PDF]

open access: yes
An optical wireless transmission technique represents an attractive choice for many indoor and outdoors applications within fixed and mobile networks. It has the advantage of providing a wide bandwidth that is unregulated worldwide, with availability ...
Alhagagi, Hussam A.
core  

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

open access: yesAdvanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu   +17 more
wiley   +1 more source

Regulated Ion‐Diffusion Hydrogels for Subtle and Multimodal Temperature‐Strain Sensing in Wound Monitoring

open access: yesAdvanced Functional Materials, EarlyView.
A soft, dual‐channel hydrogel patch enables simultaneous detection of wound temperature and strain by integrating ion‐diffusion‐mediated thermoelectric and resistive sensing. The conformal design maintains stable performance during motion, capturing subtle inflammatory and mechanical changes for continuous wound monitoring.
Yu Fang   +7 more
wiley   +1 more source

Near‐Infrared Light‐Driven Zn/Au Janus Micromotors for Multiplex SERS Detection of Anticancer Drugs

open access: yesAdvanced Functional Materials, EarlyView.
Zn/Au Janus micromotors, propelled by thermophoretic effects under NIR light, function as active SERS platforms for single and multiplex detection of anticancer drugs. Their dynamic motion enhances analyte exchange at the Au interface, reducing saturation and competitive adsorption, thereby improving sensitivity and extending the linear detection range.
Tijana Maric   +8 more
wiley   +1 more source

An ultra low power MMIC amplifier using 50nm delta doped In0.52Al0.48As / In0.53Ga0.47As metamorphic HEMT

open access: yes, 2010
An ultra-low-power monolithic amplifier using 50-nm gate-length GaAs metamorphic high-electron-mobility transistor (MHEMT) has been designed and fabricated by a coplanar waveguide monolithic microwave integrated circuit ...
Lok, L.B.   +18 more
core   +1 more source

Unraveling the Electronic Structure of Silicon Vacancy Centers in 4H‐SiC

open access: yesAdvanced Functional Materials, EarlyView.
The electronic structure of the silicon vacancy in 4H‐SiC is probed via transient absorption spectroscopy, uncovering previously inaccessible excited states of the quartet and doublet spin channels, including the V2' transition. In combination with theoretical analysis, a comprehensive picture of the electronic structure is established.
Ali Tayefeh Younesi   +9 more
wiley   +1 more source

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