Results 281 to 290 of about 11,719,954 (368)

Enhancing UV Stability and Charge Extraction in Organic Solar Cells with Phenyl‐Linked Aromatic Self‐Assembled Monolayer

open access: yesAdvanced Functional Materials, EarlyView.
The phenyl‐linked self‐assembled monolayer exhibits robust intrinsic stability and hole extraction capability compared to the alkyl‐linked counterparts, thus facilitating the device stability with T80 over 1000 h and efficiency of 19.7% in advancing organic solar cells.
Nan Zhang   +11 more
wiley   +1 more source

Regioselective and Anisotropic Multi‐Patching of Small Microparticles via a Polymer Brush‐Assisted Microcontact Printing (µCP)

open access: yesAdvanced Functional Materials, EarlyView.
A method to fabricate anisotropic SiO2 patchy microspheres is presented using a modified microcontact printing technique. This involves a PDMS elastomer stamp with grooved surface topography, creating a confined environment for the microspheres.
Martin Reifarth   +10 more
wiley   +1 more source

Mapping the Sun's coronal magnetic field using the Zeeman effect. [PDF]

open access: yesSci Adv
Schad TA   +11 more
europepmc   +1 more source

Oxygen Doping Enables Tailored Built‐In Electric Fields in FeOCl/g‐C3N4 Heterojunctions for Enhanced Peroxymonosulfate Activation

open access: yesAdvanced Functional Materials, EarlyView.
Oxygen‐doping modulated g‐C3N4 support enables a strong built‐in electric field (BIEF) in FeOCl‐OCN.This enhanced BIEF induces the rearrangement of Fe(II)/Fe(III) in FeOCl, which subtly improves intermediates adsorption and also reduces the energy barrier of *O production, thereby achieving efficient PMS activation with 1O2 and Fe(IV)= O as the primary
Ying Zeng   +9 more
wiley   +1 more source

Gate‐Tunable Hole Transport in In‐Plane Ge Nanowires by V‐Groove Confined Selective Epitaxy

open access: yesAdvanced Functional Materials, EarlyView.
Ge nanowires are promising for hole spin‐based quantum processors, requiring direct integration onto Si wafers. This work introduces V‐groove‐confined selective epitaxy for in‐plane nanowire growth on Si. Structural and low‐temperature transport measurements confirm their high crystalline quality, gate‐tunable hole densities, and mobility.
Santhanu Panikar Ramanandan   +11 more
wiley   +1 more source

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