Results 281 to 290 of about 11,719,954 (368)
Surface Crack Detection of Aluminum Alloy Using Injected Direct Current-Magnetic Field Measurement Method. [PDF]
Wang H, Shi J, Wang Q, Dong L, Liu H.
europepmc +1 more source
The phenyl‐linked self‐assembled monolayer exhibits robust intrinsic stability and hole extraction capability compared to the alkyl‐linked counterparts, thus facilitating the device stability with T80 over 1000 h and efficiency of 19.7% in advancing organic solar cells.
Nan Zhang+11 more
wiley +1 more source
Clarification of Sugarcane Juice Catalyzed by Magnetic Immobilized Laccase Intensified by Alternating Magnetic Field. [PDF]
Wang F+6 more
europepmc +1 more source
A method to fabricate anisotropic SiO2 patchy microspheres is presented using a modified microcontact printing technique. This involves a PDMS elastomer stamp with grooved surface topography, creating a confined environment for the microspheres.
Martin Reifarth+10 more
wiley +1 more source
Mapping the Sun's coronal magnetic field using the Zeeman effect. [PDF]
Schad TA+11 more
europepmc +1 more source
An Effect of Static Magnetic Field on the Point Discharge Current
Minoru Kawano
openalex +2 more sources
Oxygen‐doping modulated g‐C3N4 support enables a strong built‐in electric field (BIEF) in FeOCl‐OCN.This enhanced BIEF induces the rearrangement of Fe(II)/Fe(III) in FeOCl, which subtly improves intermediates adsorption and also reduces the energy barrier of *O production, thereby achieving efficient PMS activation with 1O2 and Fe(IV)= O as the primary
Ying Zeng+9 more
wiley +1 more source
Transport and thermoelectric properties of bernal stacked bilayer graphene due to lattice vibrations and magnetic field. [PDF]
Azizi F, Rezania H.
europepmc +1 more source
Gate‐Tunable Hole Transport in In‐Plane Ge Nanowires by V‐Groove Confined Selective Epitaxy
Ge nanowires are promising for hole spin‐based quantum processors, requiring direct integration onto Si wafers. This work introduces V‐groove‐confined selective epitaxy for in‐plane nanowire growth on Si. Structural and low‐temperature transport measurements confirm their high crystalline quality, gate‐tunable hole densities, and mobility.
Santhanu Panikar Ramanandan+11 more
wiley +1 more source