Results 201 to 210 of about 12,763 (250)
Strain Engineering of Magnetoresistance and Magnetic Anisotropy in CrSBr
Biaxial compressive strain significantly enhances magnetoresistance and critical saturation fields in thin flakes of the 2D magnet CrSBr, along all three crystallographic axes. First‐principles calculations link these effects to strain‐induced increases in exchange interactions and magnetic anisotropy.
Eudomar Henríquez‐Guerra +19 more
wiley +1 more source
Transition metal oxy/carbo‐nitrides show great promise as catalysts for sustainable processes. A Mn‐Mo mixed‐metal oxynitride attains remarkable performance for the direct synthesis of acetonitrile, an important commodity chemical, via sequential C─N and C─C coupling from syngas (C1) and ammonia (N1) feedstocks.
M. Elena Martínez‐Monje +7 more
wiley +1 more source
Bacteria‐Responsive Nanostructured Drug Delivery Systems for Targeted Antimicrobial Therapy
Bacteria‐responsive nanocarriers are designed to release antimicrobials only in the presence of infection‐specific cues. This selective activation ensures drug release precisely at the site of infection, avoiding premature or indiscriminate release, and enhancing efficacy.
Guillermo Landa +3 more
wiley +1 more source
The Y supersaturation in the [Ba‐Cu(I/II)‐O] transient liquid composition is the driving force toward YBCO nucleation and growth in TLAG. Tuning the initial (Ba:Cu) molar ratio in the ink composition determines the YBCO epitaxial nucleation through supersaturation control.
Lavinia Saltarelli +12 more
wiley +1 more source
Kelvin Probe Force Microscopy in Bionanotechnology: Current Advances and Future Perspectives
Kelvin probe force microscopy (KPFM) enables the nanoscale mapping of electrostatic surface potentials. While widely applied in materials science, its use in biological systems remains emerging. This review presents recent advances in KPFM applied to biological samples and provides a critical perspective on current limitations and future directions for
Ehsan Rahimi +4 more
wiley +1 more source
Spin and Charge Control of Topological End States in Chiral Graphene Nanoribbons on a 2D Ferromagnet
Chiral graphene nanoribbons on a ferromagnetic gadolinium‐gold surface alloy display tunable spin and charge states at their termini. Atomic work function variations and exchange fields enabe transitions between singlet, doublet, and triplet configurations.
Leonard Edens +8 more
wiley +1 more source
Magnetic doping of the topological insulator Bi2Te3 with erbium adatoms induces out‐of‐plane magnetism and breaks time‐reversal symmetry, opening a Dirac gap and driving a Fermi surface transition from hexagonal to star‐of‐David geometry. Microscopy, spectroscopy, and magnetic dichroism reveal atomically controlled magnetic interactions that tailor the
Beatriz Muñiz Cano +18 more
wiley +1 more source
Advances in Magnetic Field Sensors
The most important milestone in the field of magnetic sensors was when AMR sensors started to replace Hall sensors in many applications where the greater sensitivity of AMRs was an advantage. GMR and SDT sensors finally found applications. We also review the development of miniaturization of fluxgate sensors and refer briefly to SQUIDs, resonant ...
Pavel Ripka, Michal Janošek
exaly +3 more sources
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Integrated semiconductor magnetic field sensors
Proceedings of the IEEE, 1986A magnetic field sensor is an entrance transducer that converts a magnetic field into an electronic signal. Semiconductor magnetic field sensors exploit the galvanomagnetic effects due to the Lorentz force on charge carriers. Integrated semiconductor, notably silicon, magnetic field sensors, are manufactured using integrated circuit technologies ...
H P Balteş, R S Popovic
exaly +2 more sources
IEEE Journal of Solid-State Circuits, 1983
The authors present a novel, fully integrated magnetic field sensor made in the standard, polysilicon-gate CMOS technology. The circuit shows a sensitivity of 1.2 V/T with 10 V supply voltage and 100 /spl mu/A current consumption. The circuit consists of a pair of split-drain MOS transistors in a CMOS-differential amplifier-like configuration.
R.S. Popovic, H.P. Baltes
openaire +2 more sources
The authors present a novel, fully integrated magnetic field sensor made in the standard, polysilicon-gate CMOS technology. The circuit shows a sensitivity of 1.2 V/T with 10 V supply voltage and 100 /spl mu/A current consumption. The circuit consists of a pair of split-drain MOS transistors in a CMOS-differential amplifier-like configuration.
R.S. Popovic, H.P. Baltes
openaire +2 more sources

