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Terahertz-range on-chip local oscillator based on Josephson junction arrays for superconducting quantum-limited receivers. [PDF]
Beilstein J NanotechnolKhan FV +4 more
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All-electrical skyrmionic magnetic tunnel junction
Nature, 2023Topological whirls or ‘textures’ of spins such as magnetic skyrmions represent the smallest realizable emergent magnetic entities1–5. They hold considerable promise as robust, nanometre-scale, mobile bits for sustainable computing6–8.
Shaohai Chen +16 more
semanticscholar +3 more sources
All-electrical manipulation of magnetization in magnetic tunnel junction via spin–orbit torque
Applied Physics Letters, 2020Besides spin-transfer torque, spin–orbit torque (SOT) provides us with another electrical way for developing magnetic random access memory (MRAM) based on magnetic tunnel junctions (MTJs).
W. Kong +6 more
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Advanced Electronic Materials, 2020
Emerging research in 2D materials has promoted the development of nanoelectronics. Ferromagnetic van der Waals (vdW) layered materials can be utilized to implement ultrathin spintronic devices with new functionalities. The theoretical investigation of 2D
Zheng‐Zhe Lin, Xiangshan Chen
semanticscholar +1 more source
Emerging research in 2D materials has promoted the development of nanoelectronics. Ferromagnetic van der Waals (vdW) layered materials can be utilized to implement ultrathin spintronic devices with new functionalities. The theoretical investigation of 2D
Zheng‐Zhe Lin, Xiangshan Chen
semanticscholar +1 more source
Magnetic tunnelling junction based FPGA
Proceedings of the 2006 ACM/SIGDA 14th international symposium on Field programmable gate arrays, 2006The aim of this paper is to propose a real time reconfigurable (RTR) micro-FPGA using new non volatile memory. Magnetic tunneling junctions (MTJ) used in Magnetic random access memories (MRAM) are compatible with classical CMOS processes. Moreover remanent property of such a memory could limit configuration time and power consumption required at each ...
Bruchon, Nicolas +3 more
openaire +2 more sources
2008
In magnetoelectronic devices large opportunities are opened by the spin dependent tunneling resistance, where a strong dependence of the tunneling current on the relative orientation of the magnetization of the electrodes is found. Within a short time, the amplitude of the resistance change of the junctions increased dramatically.
Reiss, Günter +4 more
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In magnetoelectronic devices large opportunities are opened by the spin dependent tunneling resistance, where a strong dependence of the tunneling current on the relative orientation of the magnetization of the electrodes is found. Within a short time, the amplitude of the resistance change of the junctions increased dramatically.
Reiss, Günter +4 more
openaire +3 more sources
Transport in magnetically-doped magnetic tunnel junctions
IEEE International Digest of Technical Papers on Magnetics Conference, 2002We report striking transport behavior of magnetic tunnel junctions which are engineered to incorporate localized magnetic impurities inside the tunnel barrier. Such junctions exhibited zero-bias anomalies (giant conductance dip or equivalently, giant resistance peak) in dynamic conductance curves, and striking bias and temperature dependencies of ...
null Seung-Young Bae +1 more
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Experimental Observation of Single Skyrmion Signatures in a Magnetic Tunnel Junction.
Physical Review Letters, 2019We have deterministically created a stable topological spin texture in magnetic tunnel junctions (MTJ) by using pulsed or microwave currents. The spin texture is characterized by a field-dependent intermediate resistance state and a new magnetic ...
N. Penthorn +4 more
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