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An intrinsic magnetic tunnel junction
Science, 2018Magnetism An electrical current running through two stacked magnetic layers is larger if their magnetizations point in the same direction than if they point in opposite directions. These so-called magnetic tunnel junctions, used in electronics, must be carefully engineered.
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Tunneling magnetoresistance in antiferromagnetic magnetic tunnel junctions
Journal of Physics D: Applied PhysicsAbstract Magnetic random-access memory (MRAM) offers significant advantages in non-volatility, low power consumption, and high endurance and fast switching speed, making it an attractive solution for memory applications. The core structure, magnetic tunnel junctions (MTJs), has been successfully established in MRAM with high tunneling
Jiakai Yang +14 more
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Tunneling magnetoresistance modulation in a magnetic tunnel junction with a ferroelectric barrier
Nanotechnology, 2011A simple model is developed to investigate the potential profile changes due to mechanical stress at the ferromagnetic/ferroelectric interfaces of ferromagnetic-ferroelectric-ferromagnetic tunnel junctions with an ultrathin ferroelectric barrier. The potential changes associated with the polarization variation have significant effects on the tunneling ...
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Huge tunneling magnetoresistance in magnetic tunnel junction with Heusler alloy Co2MnSi electrodes
Chinese Journal of Chemical Physics, 2021Qunxiang Li, Huang Jing
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Magnetic tunnel junction on a ferroelectric substrate
Applied Physics Letters, 2009N A Pertsev, H Kohlstedt, Kohlstedt H
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Voltage-induced magnetization switching method utilizing dipole coupled magnetic tunnel junction
Journal of Magnetism and Magnetic Materials, 2020Jiahao Liu, Lu Huang, Xiaokuo Yang
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Magnetoresistance in silicon based ferrite magnetic tunnel junction
Current Applied Physics, 2014S Ravi, K Tamilarasan
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