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Magnetic tunnelling junction based FPGA
Proceedings of the 2006 ACM/SIGDA 14th international symposium on Field programmable gate arrays, 2006The aim of this paper is to propose a real time reconfigurable (RTR) micro-FPGA using new non volatile memory. Magnetic tunneling junctions (MTJ) used in Magnetic random access memories (MRAM) are compatible with classical CMOS processes. Moreover remanent property of such a memory could limit configuration time and power consumption required at each ...
Bruchon, Nicolas +3 more
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Transport in magnetically-doped magnetic tunnel junctions
IEEE International Digest of Technical Papers on Magnetics Conference, 2002We report striking transport behavior of magnetic tunnel junctions which are engineered to incorporate localized magnetic impurities inside the tunnel barrier. Such junctions exhibited zero-bias anomalies (giant conductance dip or equivalently, giant resistance peak) in dynamic conductance curves, and striking bias and temperature dependencies of ...
null Seung-Young Bae +1 more
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2008
In magnetoelectronic devices large opportunities are opened by the spin dependent tunneling resistance, where a strong dependence of the tunneling current on the relative orientation of the magnetization of the electrodes is found. Within a short time, the amplitude of the resistance change of the junctions increased dramatically.
Reiss, Günter +4 more
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In magnetoelectronic devices large opportunities are opened by the spin dependent tunneling resistance, where a strong dependence of the tunneling current on the relative orientation of the magnetization of the electrodes is found. Within a short time, the amplitude of the resistance change of the junctions increased dramatically.
Reiss, Günter +4 more
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Spin-Polarized Resonant Tunneling in Magnetic Tunnel Junctions
Science, 2002Insertion of a thin nonmagnetic copper Cu(001) layer between the tunnel barrier and the ferromagnetic electrode of a magnetic tunnel junction is shown to result in the oscillation of the tunnel magnetoresistance as a function of the Cu layer thickness. The effect is interpreted in terms of the formation of spin-polarized resonant tunneling.
S, Yuasa, T, Nagahama, Y, Suzuki
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Microstructures of magnetic tunneling junctions
Journal of Applied Physics, 2003We have investigated the microstructures of magnetic tunneling junctions using high-resolution transmission electron microscopy (HRTEM). These junctions exhibit large magnetoresistance of 34% at room temperature and at tens of gauss. HRTEM reveals well-defined layered polycrystalline metallic structures.
Lai-feng Li, Xiaoyong Liu, Gang Xiao
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Photoconductance in magnetic tunnel junctions
IEEE Transactions on Magnetics, 2002The applicability of magnetic tunnel junctions strongly depends on the electrical properties of the oxide barrier. The height and thickness of the energy barrier determines the resistance-area product of the junction, which is an important factor in the application of microstructured devices, such as MRAM.
Koller, P.H.P. +3 more
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Spin-dependent tunnelling in magnetic tunnel junctions
Journal of Physics: Condensed Matter, 2003The phenomenon of electron tunnelling has been known since the advent of quantum mechanics, but continues to enrich our understanding of many fields of physics, as well as creating sub-fields on its own. Spin-dependent tunnelling (SDT) in magnetic tunnel junctions (MTJs) has recently aroused enormous interest and has developed in a vigorous field of ...
Tsymbal, Evgeny Y +2 more
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Graphene As a Tunnel Barrier: Graphene-Based Magnetic Tunnel Junctions
Nano Letters, 2012Graphene has been widely studied for its high in-plane charge carrier mobility and long spin diffusion lengths. In contrast, the out-of-plane charge and spin transport behavior of this atomically thin material have not been well addressed. We show here that while graphene exhibits metallic conductivity in-plane, it serves effectively as an insulator ...
Enrique, Cobas +4 more
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