Results 1 to 10 of about 1,297 (189)

Temperature dependence of tunnel magnetoresistance in serial magnetic tunnel junctions

AIP Advances, 2022
Magnetic tunnel junctions have been widely used in various applications, such as magnetic sensors and magnetic random-access memories. In the practical application of MTJs, they are usually used in series toward high sensitivity and high stability ...
Dongyan Zhao, Yubo Wang, Jin Shao, Yanning Chen, Zhen Fu, Qingtao Xia, Shuaipeng Wang, Xiuwei Li, Guangzhi Dong, Min Zhou, Dapeng Zhu   +10 more
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Tunneling anisotropic magnetoresistance driven by magnetic phase transition

Nature Communications, 2017
Tunneling anisotropic magnetoresistance is promising for next generation memory devices but limited by the low efficiency and functioning temperature. Here the authors achieved 20% tunneling anisotropic magnetoresistance at room temperature in magnetic ...
X. Z. Chen, J. F. Feng, Z. C. Wang, J. Zhang, X. Y. Zhong, C. Song, L. Jin, B. Zhang, F. Li, M. Jiang, Y. Z. Tan, X. J. Zhou, G. Y. Shi, X. F. Zhou, X. D. Han, S. C. Mao, Y. H. Chen, X. F. Han, F. Pan   +18 more
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Resonant Inversion of Tunneling Magnetoresistance

Physical Review Letters, 2003
Resonant tunneling via localized states in the barrier can invert magnetoresistance in magnetic tunnel junctions. Experiments performed on electrodeposited Ni/NiO/Co nanojunctions of area smaller than 0.01 microm(2) show that both positive and negative values of magnetoresistance are possible. Calculations based on Landauer-Büttiker theory explain this
Tsymbal, Evgeny Y., Sokolov, Andrei, Sabiryanov, Ildar F., Doudin, Bernard   +3 more
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Magnetic memory driven by topological insulators

Nature Communications, 2021
It remains challenging to integrate topological insulators (TI) with magnetic tunnel junctions (MTJ) for spintronics applications. Here, the authors achieve a large tunneling magnetoresistance ratio and a low switching current density in a TI-MTJ device ...
Hao Wu, Aitian Chen, Peng Zhang, Haoran He, John Nance, Chenyang Guo, Julian Sasaki, Takanori Shirokura, Pham Nam Hai, Bin Fang, Seyed Armin Razavi, Kin Wong, Yan Wen, Yinchang Ma, Guoqiang Yu, Gregory P. Carman, Xiufeng Han, Xixiang Zhang, Kang L. Wang   +18 more
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Large and Local Magnetoresistance in a State-of-the-Art Perpendicular Magnetic Medium

Nanotechnology, Science and Applications, 2021
Morgan Williamson,1,2 Cheng Wang,3 Pin-Wei Huang,3 Ganping Ju,3 Maxim Tsoi1,2 1Physics Department, University of Texas at Austin, Austin, TX 78712, USA; 2Texas Materials Institute, University of Texas at Austin, Austin, TX 78712, USA; 3Fremont Research ...
Williamson M, Wang C, Huang PW, Ju G, Tsoi M   +4 more
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The tunneling magnetoresistance current dependence on cross sectional area, angle and temperature

AIP Advances, 2015
The magnetoresistance of a MgO-based magnetic tunnel junction (MTJ) was studied experimentally. The magnetoresistance as a function of current was measured systematically on MTJs for various MgO cross sectional areas and at various temperatures from 7.5 ...
Z. H. Zhang, Lihui Bai, C.-M. Hu, S. Hemour, K. Wu, X. L. Fan, D. S. Xue, D. Houssameddine   +7 more
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Resonant Tunnel Magnetoresistance in a Double Magnetic Tunnel Junction

Journal of Superconductivity and Novel Magnetism, 2011
We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can be aligned parallel or antiparallel with respect to the fixed magnetizations of the left FML and right FMR ...
Useinov, Arthur, Useinov, Niazbeck Kh H, Tagirov, Lenar R., Kosel, Jürgen   +3 more
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Nanogranular Strontium Ferromolybdate/Strontium Molybdate Ceramics—A Magnetic Material Possessing a Natural Core-Shell Structure

Electronic Materials
In this work, we demonstrate the preparation of easy-to-fabricate nanogranular strontium ferromolybdate/strontium molybdate core-shell ceramics and examine their properties, including tunnel magnetoresistance, magnetic field sensitivity, and temperature ...
Gunnar Suchaneck, Evgenii Artiukh, Nikolay Kalanda, Marta Yarmolich, Gerald Gerlach   +4 more
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Tunneling magnetoresistance in junctions composed of ferromagnets and time-reversal invariant topological superconductors

New Journal of Physics, 2016
Tunneling magnetoresistance between two ferrromagnets is an issue of fundamental importance in spintronics. In this work, we show that tunneling magnetoresistance can also emerge in junctions composed of ferromagnets and time-reversal invariant ...
Zhongbo Yan, Shaolong Wan
doaj   +1 more source

Influence of roughness and disorder on tunneling magnetoresistance [PDF]

Physical Review B, 2006
A systematic, quantitative study of the effect of interface roughness and disorder on the magnetoresistance of FeCo$|$vacuum$|$FeCo magnetic tunnel junctions is presented based upon parameter-free electronic structure calculations. Surface roughness is found to have a very strong effect on the spin-polarized transport while that of disorder in the ...
Xu, P., Karpan, V., Xia, K., Zwierzycki, M., Marushchenko, I., Kelly, P.   +5 more
openaire   +3 more sources