Results 11 to 20 of about 1,297 (189)

Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance [PDF]

Nature Communications, 2018
Perpendicular magnetic tunnel junctions with large tunnel magnetoresistance and low junction resistance are promising for the magnetic random access memories.
Mengxing Wang, Wenlong Cai, Kaihua Cao, Jiaqi Zhou, Jerzy Wrona, Shouzhong Peng, Huaiwen Yang, Jiaqi Wei, Wang Kang, Youguang Zhang, Jürgen Langer, Berthold Ocker, Albert Fert, Weisheng Zhao   +13 more
doaj   +2 more sources

Giant Spin-flop magnetoresistance in a collinear antiferromagnetic tunnel junction [PDF]

Nature Communications
Collinear antiferromagnetic (AFM) materials have the unique promise of no stray fields, displaying ultrafast dynamics, and being robust against perturbation fields which motivate the extensive research of antiferromagnetic spintronics.
Shijie Xu, Zhizhong Zhang, Farzad Mahfouzi, Yan Huang, Houyi Cheng, Bingqian Dai, Jinwoong Kim, Daoqian Zhu, Wenlong Cai, Kewen Shi, Zongxia Guo, Kaihua Cao, Bin Hong, Yongshan Liu, Jiakai Yang, Kun Zhang, Jiefeng Cao, Fangyuan Zhu, Lixuan Tai, Yamei Wang, Sylvain Eimer, Albert Fert, Kang L. Wang, Nicholas Kioussis, Yue Zhang, Weisheng Zhao   +25 more
doaj   +2 more sources

Tunnel Magnetoresistance Sensors with Magnetostrictive Electrodes: Strain Sensors [PDF]

Sensors, 2016
Magnetostrictive tunnel magnetoresistance (TMR) sensors pose a bright perspective in micro- and nano-scale strain sensing technology. The behavior of TMR sensors under mechanical stress as well as their sensitivity to the applied stress depends on the ...
Ali Tavassolizadeh, Karsten Rott, Tobias Meier, Eckhard Quandt, Hendrik Hölscher, Günter Reiss, Dirk Meyners   +6 more
doaj   +2 more sources

Two-dimensional magnetic tunnel p-n junctions for low-power electronics [PDF]

Nature Communications
For decades, semiconductors and their heterostructures have underpinned both fundamental and applied research across all areas of electronics. Two-dimensional, 2D (atomically thin) semiconductors have now the potential to push further the miniaturization
Wenkai Zhu, Ziao Wang, Tiangui Hu, Zakhar R. Kudrynskyi, Tong Zhou, Zakhar D. Kovalyuk, Ce Hu, Hailong Lin, Xiaodong Li, Yongcheng Deng, Quanshan Lv, Lixia Zhao, Amalia Patanè, Igor Žutić, Houzhi Zheng, Kaiyou Wang   +15 more
doaj   +2 more sources

Strontium Ferromolybdate-Based Magnetic Tunnel Junctions

Applied Sciences, 2022
Thin-film strontium ferromolybdate is a promising material for applications in room-temperature magnetic tunnel junction devices. These are spin-based, low-power-consuming alternatives to CMOS in non-volatile memories, comparators, analog-to-digital ...
Gunnar Suchaneck, Evgenii Artiukh, Nikolai A. Sobolev, Eugene Telesh, Nikolay Kalanda, Dmitry A. Kiselev, Tatiana S. Ilina, Gerald Gerlach   +7 more
doaj   +1 more source

Mesoscopic tunneling magnetoresistance [PDF]

Physical Review B, 2001
5 pages, 3 eps figures included using epsf.sty. Revised text and improved notation, fig.
Usaj, Gonzalo, Baranger, Harold. U.
openaire   +2 more sources

Tunnel Spin-Polarization of Ferromagnetic Metals and Ferrimagnetic Oxides and Its Effect on Tunnel Magnetoresistance

Electronic Materials, 2022
This work presents an examination and unification of fragmented data on spin polarization in half-metallic, ferrimagnetic oxides. It also includes well understood ferromagnetic metals for comparison.
Gunnar Suchaneck
doaj   +1 more source

Interfacial quality to control tunnelling magnetoresistance

Frontiers in Physics, 2022
Theoretically, coherent tunnelling through an MgO barrier can achieve over 1,000% magnetoresistance at room temperature. To date, this has not been demonstrated experimentally.
Atsufumi Hirohata, Kelvin Elphick, David C. Lloyd, Shigemi Mizukami, Shigemi Mizukami   +4 more
doaj   +1 more source

Spin effects on transport and zero-bias anomaly in a hybrid Majorana wire-quantum dot system

Scientific Reports, 2023
We examine the impact of spin effects on the nonequilibrium transport properties of a nanowire hosting Majorana zero-energy modes at its ends, coupled to a quantum dot junction with ferromagnetic leads.
Alexandre Huguet, Kacper Wrześniewski, Ireneusz Weymann   +2 more
doaj   +1 more source

Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions

Physical Review Letters, 2022
Antiferromagnetic (AFM) spintronics has emerged as a subfield of spintronics driven by the advantages of antiferromagnets producing no stray fields and exhibiting ultrafast magnetization dynamics. The efficient method to detect an AFM order parameter, known as the Néel vector, by electric means is critical to realize concepts of AFM spintronics.
Jianting Dong, Xinlu Li, Gautam Gurung, Meng Zhu, Peina Zhang, Fanxing Zheng, Evgeny Y. Tsymbal, Jia Zhang   +7 more
openaire   +3 more sources