Results 31 to 40 of about 1,297 (189)

Ultra-giant magnetoresistance in graphene-based spin valves with gate-controlled potential barriers

New Journal of Physics, 2019
Pursuing larger tunnel magnetoresistance is a significant work to develop attractive spin-valve devices for high-performance read heads of hard disk drives, magnetic random access memories, and transistors.
Peng Tseng, Wen-Jeng Hsueh
doaj   +1 more source

Tunneling Anisotropic Magnetoresistance: A Spin-Valve-Like Tunnel Magnetoresistance Using a Single Magnetic Layer [PDF]

Physical Review Letters, 2004
We introduce a new class of spintronics devices in which a spin-valve like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled ferromagnets. The effect is observed in a normal-metal/insulator/ferromagnetic-semiconductor tunneling device.
Gould, C., Rüster, C., Jungwirth, T., Girgis, E., Schott, G. M., Giraud, R., Brunner, K., Schmidt, G., Molenkamp, L. W.   +8 more
openaire   +3 more sources

Theory for tunnel magnetoresistance oscillation

Physical Review B
The universal oscillation of the tunnel magnetoresistance (TMR) ratio as a function of the insulating barrier thickness in crystalline magnetic tunnel junctions (MTJs) is a long-standing unsolved problem in condensed matter physics. To explain this, we here introduce a superposition of wave functions with opposite spins and different Fermi momenta ...
Keisuke Masuda, Thomas Scheike, Hiroaki Sukegawa, Yusuke Kozuka, Seiji Mitani, Yoshio Miura   +5 more
openaire   +3 more sources

Tunnel magnetoresistance exceeding 100% in magnetic tunnel junctions using Mn-based tetragonal alloy electrodes with perpendicular magnetic anisotropy

AIP Advances, 2023
We studied MgO barrier magnetic tunnel junctions (MTJs) comprising perpendicularly magnetized MnGa and FeCoB electrodes. In those perpendicular (p-) MTJs, we utilized thin metastable bcc CoMn alloys as an interlayer between MnGa and MgO to enhance the ...
Kazuya Z. Suzuki, Shigemi Mizukami
doaj   +1 more source

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

Advanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben, Nicolas Gauquelin, Arno Annys, Zhaoliang Liao, Jo Verbeeck, Guus Rijnders, Gertjan Koster   +6 more
wiley   +1 more source

Integrated Field‐Free SOT Domain‐Wall Synapses and MTJ Stochastic Neurons for Hardware Boltzmann Machines

Advanced Functional Materials, EarlyView.
Field‐free spin‐orbit torque domain‐wall synapses integrated with stochastic MTJ neurons enable compact hardware Boltzmann machines. Leveraging intrinsic stochasticity and multi‐level conductance, the system achieves efficient probabilistic learning with high accuracy, demonstrating a scalable spintronic platform for energy‐efficient edge AI.
Aijaz H. Lone, Meng Tang, Camelia Florica, Bin He, Jingkai Xu, Selma Amara, Georgian Melinte, Xixiang Zhang, Gianluca Setti   +8 more
wiley   +1 more source

Tunneling magnetoresistance effect in altermagnets

Physical Review B
13 pages, 7 ...
Yu-Fei Sun, Yue Mao, Yu-Chen Zhuang, Qing-Feng Sun   +3 more
openaire   +2 more sources

Development of a Three‐Axis Planar Hall Magnetoresistance Sensor Using a Superparamagnetic Nanoparticle‐Based Flux Guide

Advanced Functional Materials, EarlyView.
A printed superparamagnetic nanoparticle‐based flux guide enables the realization of a hysteresis‐free three‐axis magnetic sensor. This innovative architecture efficiently redirects out‐of‐plane fields to planar sensing elements, facilitating simultaneous vector detection without complex reset protocols.
Changyeop Jeon, Mijin Kim, Keonmok Kim, Byeonghwa Lim, Bibhutibhusan Nayak, Youngdo Jung, Bo‐Yeon Lee, Taehyeong Jeon, Jinwoo Kim, Sunjong Oh, CheolGi Kim   +10 more
wiley   +1 more source

Strain Engineering of Magnetoresistance and Magnetic Anisotropy in CrSBr

Advanced Materials, EarlyView.
Biaxial compressive strain significantly enhances magnetoresistance and critical saturation fields in thin flakes of the 2D magnet CrSBr, along all three crystallographic axes. First‐principles calculations link these effects to strain‐induced increases in exchange interactions and magnetic anisotropy.
Eudomar Henríquez‐Guerra, Alberto M. Ruiz, Marta Galbiati, Álvaro Cortés‐Flores, Daniel Brown, Esteban Zamora‐Amo, Lisa Almonte, Andrei Shumilin, Juan Salvador‐Sánchez, Ana Pérez‐Rodríguez, Iñaki Orue, Andrés Cantarero, Andres Castellanos‐Gomez, Federico Mompeán, Mar Garcia‐Hernandez, Efrén Navarro‐Moratalla, Enrique Diez, Mario Amado, José J. Baldoví, M. Reyes Calvo   +19 more
wiley   +1 more source

Origin of the Magnetoresistance in Oxide Tunnel Junctions Determined through Electric Polarization Control of the Interface

Physical Review X, 2015
The observed magnetoresistance (MR) in three-terminal (3T) ferromagnet-nonmagnet (FM-NM) tunnel junctions has historically been assigned to ensemble dephasing (Hanle effect) of a spin accumulation, thus offering a powerful approach for characterizing the
Hisashi Inoue, Adrian G. Swartz, Nicholas J. Harmon, Takashi Tachikawa, Yasuyuki Hikita, Michael E. Flatté, Harold Y. Hwang   +6 more
doaj   +1 more source