Results 51 to 60 of about 1,297 (189)

Magnetoelectric Nanoparticle‐Based Wireless Brain–Computer Interface: Underlying Physics and Projected Technology Pathway

open access: yesAdvanced Science, EarlyView.
Magnetoelectric nanoparticles (MENPs) enable fully wireless, minutely invasive neuromodulation, and potentially neural recording, by converting magnetic into electric and, conversely, electric into magnetic fields, respectively, at high spatiotemporal resolution.
Elric Zhang   +14 more
wiley   +1 more source

Inverse tunneling magnetoresistance in nanoscale magnetic tunnel junctions [PDF]

open access: yesPhysical Review B, 2005
11 pages, 4 figures, To be published in Phys. Rev. B (in press)
openaire   +2 more sources

Magnetic tunnel junction based on bilayer LaI2 as perfect spin filter device

open access: yesnpj 2D Materials and Applications
The discovery of van der Waals intrinsic magnets has expanded the possibilities of realizing spintronics devices. We investigate the transmission, tunneling magnetoresistance ratio, and spin injection efficiency of bilayer LaI2 using a combination of ...
Shubham Tyagi   +3 more
doaj   +1 more source

Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling

open access: yesNature Communications, 2019
Electric field controlled magnetism provides an energy efficient way for the operations in the spintronic devices. Here the authors show strain induced, reversible, nonvolatile electric field control of magnetization and magnetoresistance in a magnetic ...
Aitian Chen   +15 more
doaj   +1 more source

Flexoelectricity in Photoconversion: Fundamentals, Materials, and Outlooks

open access: yesAdvanced Science, EarlyView.
Mechanical bending of a flexible cantilever induces a strain gradient in the photoactive material. The resulting flexoelectric field couples with photovoltaic and photoconductive effects, modulating charge generation, separation, and collection. A comparative analysis of oxide perovskites, halide perovskites, and two‐dimensional materials is presented,
Xiang Huang, Feng Li, Rongkun Zheng
wiley   +1 more source

Perpendicular magnetic anisotropy, tunneling magnetoresistance and spin-transfer torque effect in magnetic tunnel junctions with Nb layers

open access: yesScientific Reports, 2023
Nb and its compounds are widely used in quantum computing due to their high superconducting transition temperatures and high critical fields.
Bowei Zhou   +9 more
doaj   +1 more source

Sliding Ferroelectricity Driven Spin‐Layertronics in Altermagnetic Multilayers

open access: yesAdvanced Science, EarlyView.
Integrating sliding ferroelectricity with altermagnetism enables nonvolatile electrical control of spin and layer degrees of freedom. In bilayer CuF2, interlayer translation reverses layer‐locked spin‐split bands, establishing a multifunctional “spin‐layertronic” platform.
Rui Peng   +5 more
wiley   +1 more source

Tunnel magnetoresistance of a single-molecule junction [PDF]

open access: yesJournal of Applied Physics, 2008
Based on the nonequilibrium Green’s function technique and the Landauer–Büttiker theory, the possibility of a molecular spintronic device, which consists of a single C60 molecule attached to two ferromagnetic electrodes with finite cross sections, is investigated.
openaire   +2 more sources

Unconventional Room‐Temperature Antisymmetric Magnetoresistance in van der Waals Fe3GaTe2/Pt Heterostructures

open access: yesAdvanced Science, EarlyView.
We investigated a special electrical phenomenon, known as antisymmetric magnetoresistance with four distinct resistance states, in 2D Fe3GaTe2/Pt devices at room temperature. By designing devices with two separated magnetic nanoflakes, we confirmed that the effect originates from spin–momentum locking rather than magnetic domain walls or interface ...
Yunwen Zhu   +10 more
wiley   +1 more source

Giant magnetoresistance in perpendicularly magnetized synthetic antiferromagnetic coupling with Ir spacer

open access: yesAIP Advances, 2018
Perpendicularly magnetized magnetic tunnel junction (p-MTJ) is a key element for developing high-density spin-transfer torque switching magnetoresistive random access memory.
A. Fukushima   +5 more
doaj   +1 more source

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