Results 61 to 70 of about 1,297 (189)

Uranium Doped Gallium Nitride Epitaxial Thin Films

Advanced Electronic Materials, EarlyView.
Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix, Sabin Regmi, Aaron G. Penders, Sohail Shah, Kevin D. Vallejo, Volodymyr B. Buturlim, Belief Rifore, Krzysztof Gofryk, Mukesh Bachhav, Nicholas J. Borys, Brelon J. May   +10 more
wiley   +1 more source

Resistive switching and voltage induced modulation of tunneling magnetoresistance in nanosized perpendicular organic spin valves

AIP Advances, 2016
Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La0.7Sr0.3MnO3/Alq3/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as high as -70% the latter even ...
Robert Göckeritz, Nico Homonnay, Alexander Müller, Bodo Fuhrmann, Georg Schmidt   +4 more
doaj   +1 more source

Features of Modeling of the Magnetorefractive Effect in Multilayered Metal Nanostructures

Российский технологический журнал, 2019
The magnetorefractive effect (MRE) is important and interesting from both fundamental and practical points of view. This effect consists in a change in the reflection coefficient or the passage of an electromagnetic wave from magnetized structures with ...
A. A. Mokrushina, A. N. Yurasov
doaj   +1 more source

Topological Materials and Related Applications

Advanced Electronic Materials, EarlyView.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti, Roberto Mantovan, Emanuele Longo, Harold J. W. Zandvliet, Pantelis Bampoulis, Yu Pan, Fan Li, Xia Wang, Payton Downey, Alessandro Molle   +9 more
wiley   +1 more source

Fractional Modeling of the AC Large-Signal Frequency Response in Magnetoresistive Current Sensors

Sensors, 2013
Fractional calculus is considered when derivatives and integrals of non-integer order are applied over a specific function. In the electrical and electronic domain, the transfer function dependence of a fractional filter not only by the filter order n ...
Sergio Iván Ravelo Arias, Diego Ramírez Muñoz, Jaime Sánchez Moreno, Susana Cardoso, Ricardo Ferreira, Paulo Jorge Peixeiro de Freitas   +5 more
doaj   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

Perpendicularly magnetized ferrimagnetic [Mn50Ga50/Co2FeAl] superlattice and the utilization in magnetic tunnel junctions

AIP Advances, 2015
The ferrimagnetic superlattice (SL) [MnGa/Co2FeAl]n exhibiting perpendicular magnetic anisotropy opened a new method for spintronics materials used in magnetic random access memory, because of the high anisotropy, small damping constant and tunable ...
Q. L. Ma, X. M. Zhang, T. Miyazaki, S. Mizukami   +3 more
doaj   +1 more source

SiOx‐Based Probabilistic Bits Enabling Invertible Logic Gate for Cryptographic Applications

Advanced Intelligent Systems, EarlyView.
To enable lightweight hardware encryption and decryption, a Ti/SiOx/Ti threshold switching device is engineered to generate controllable stochastic oscillations. By tuning the input voltage, the device produces a programmable spike probability governed by intrinsic switching dynamics, enabling probabilistic bits that construct an invertible ...
Jihyun Kim, Hyeonsik Choi, Jiyong Woo
wiley   +1 more source

Flexible magnetic films and spintronic devices

npj Spintronics
The rapid evolution of wearable and implantable electronics has driven the development of flexible magnetoelectronic devices that integrate mechanical adaptability with robust magnetic functionality.
Guohao Bo, Xiaoguang Xu, Kangkang Meng, Yong Wu, Yong Jiang   +4 more
doaj   +1 more source

Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation

Advanced Intelligent Systems, EarlyView.
Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison, Kevin Nadaud, Josquin Harrison, Guillaume F. Nataf, Laura Bégon‐Lours   +4 more
wiley   +1 more source