Results 81 to 90 of about 1,297 (189)
Memristive Physical Reservoir Computing
Advanced Science, Volume 13, Issue 33, 15 June 2026.Memristors’ nonlinear dynamics and input‐dependent memory effects make them ideal candidates for high‐performance physical reservoir computing (RC). Based on their conductance modulation, memristors can be classified as electronic or optoelectronic types.
Dian Jiao +9 more
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Progress in Strain Engineering of 2D‐Integrated Heterostructures for Ultrasensitive Sensors
Advanced Science, Volume 13, Issue 33, 15 June 2026.. ABSTRACT Two‐dimensional (2D) integrated heterostructures have emerged as a cornerstone in the advancement of next‐generation sensor technologies. These heterostructures, which combine materials with different dimensionalities, have led to significant breakthroughs in sensing performance and device integration.
That Buu Ton +4 more
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Theory of tunneling magnetoresistance
Journal of Physics D: Applied PhysicsAbstract This review is an account of theory of spin-dependent tunneling and magnetoresistive transport in magnetic tunnel junctions, covering coherent and incoherent tunneling processes, first-principles theory, and device-level phenomena.
X-G Zhang, Mairbek Chshiev
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The Progress of Orbitronics: The Enhancement of Orbital Torque Efficiency
Advanced Physics Research, Volume 5, Issue 6, June 2026.Orbit‐torque (OT) devices attract significant attention for their low‐power consumption and high stability in applications. This review systematically outlines strategies for enhancing OT efficiency. We categorize approaches into boosting orbital currents/torques and improving the orbital‐to‐spin conversion coefficient.
Pengfei Liu +6 more
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Tunneling anisotropic magnetoresistance in La2/3Sr1/3MnO3/LaAlO3/Pt tunnel junctions
AIP Advances, 2016 The magnetotransport properties of La2/3Sr1/3MnO3(LSMO)/ LaAlO3(LAO)/Pt tunneling junctions have been analyzed as a function of temperature and magnetic field.
R. Galceran +6 more
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Tunnel Magnetoresistance Sensor with AC Modulation and Impedance Compensation for Ultra-Weak Magnetic Field Measurement. [PDF]
Sensors (Basel), 2022 Zhao W, Tao X, Ye C, Tao Y.
europepmc +1 more source
Approaches to tunnel magnetoresistance effect with antiferromagnets
Journal of Physics: Condensed MatterAbstract The tunnel magnetoresistance (TMR) effect is one of the representative phenomena in spintronics. Ferromagnets, which have a net spin polarization, have been utilized for the TMR effect. Recently, by contrast, the TMR effect with antiferromagnets, which do not possess a macroscopic spin polarization, has been proposed, and also ...
Katsuhiro Tanaka +2 more
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Results in PhysicsThe angle-dependent tunnel magnetoresistance (TMR) is studied in double-barrier magnetic tunnel junctions with a central layered antiferromagnet (DB-MTJs-AF).
Nader Ghobadi +2 more
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Resonant TMR inversion in LiF/EuS based spin-filter tunnel junctions
AIP Advances, 2016 Resonant tunneling can lead to inverse tunnel magnetoresistance when impurity levels rather than direct tunneling dominate the transport process. We fabricated hybrid magnetic tunnel junctions of CoFe/LiF/EuS/Ti, with an epitaxial LiF energy barrier ...
Fen Liu +5 more
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Tunnel magnetoresistance effect in a magnetic tunnel junction with a B2-Fe3Sn electrode
AIP Advances, 2019 In magnetic tunnel junctions (MTJs), the tunnel resistance varies as a function of the relative magnetic configuration of the electrode, in an effect called tunnel magnetoresistance (TMR).
Y. Goto +4 more
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