Results 91 to 100 of about 1,297 (189)

Enhancing and decoupling magnetic anisotropy and tunnel magnetoresistance in CoFe2O4/MgO bilayers via swift heavy ion irradiation [PDF]

AIP Advances
Magnetic tunnel junctions (MTJs) formed by CoFe2O4 and MgO are key components to form memory elements in magnetic random access memory (MRAM) for high-density data storage applications.
Ritika Charak, Sanjeev Gautam, Shaffy Garg, Younghak Kim, Keun Hwa Chae   +4 more
doaj   +1 more source

Tunnel Magnetoresistive Effect in Nanostructured Composite Systems

EPJ Web of Conferences, 2018
The results of the investigation of tunnel magnetoresistive effect in a large number of metal-dielectric nanocomposites obtained by the same technology and under identical conditions are presented.
Stognei O.V., Sitnikov A.V., Kalinin Yu.E.   +2 more
doaj   +1 more source

Spin-torque quantization and microwave sensitivity of a nano-sized spin diode

EPJ Web of Conferences, 2018
Rectification of microwave signal by the spin-torque diode is very promising for its practical applications in microwave imaging. This is due to a very high sensitivity of magnetic tunnel junction under the bias current, which was previously demonstrated
Demin Gleb, Popkov Anatoly
doaj   +1 more source

Enhancement of magnetic field sensitivity by spin-transfer torque in in-plane magnetized superparamagnetic tunnel junctions

Applied Physics Express
We measured the magnetic field dependence of superparamagnetic tunnel junctions (SMTJs) with in-plane magnetization and a diameter of 100 nm. A threefold enhancement in the slope of the probability curve was observed under the application of large ...
Ryunosuke Hirama, Takahide Kubota, Motoki Endo, Kosuke Fujiwara, Satoshi Sasaki, Yutaka Higo, Lui Sakai, Masanori Hosomi, M. Oogane   +8 more
doaj   +1 more source

Half-metallic Heusler alloy/AlP based magnetic tunnel junction

AIP Advances
Exploring the spin transport characteristics of magnetic tunnel junctions based on half-metallic Heusler holds significance, not only in unraveling the fundamental physics at play but also in advancing applications of spintronic devices.
Kaifang Qu, Qiyun Xie, Wei Wang
doaj   +1 more source

Tunnel magnetoresistance angular and bias dependence enabling tuneable wireless communication. [PDF]

Sci Rep, 2019
Kowalska E, Fukushima A, Sluka V, Fowley C, Kákay A, Aleksandrov Y, Lindner J, Fassbender J, Yuasa S, Deac AM.   +9 more
europepmc   +1 more source

Room‐temperature tunable tunneling magnetoresistance in Fe3GaTe2/WSe2/Fe3GaTe2 van der Waals heterostructures

InfoMat
The exceptional properties of two‐dimensional (2D) magnet materials present a novel approach to fabricate functional magnetic tunnel junctions (MTJ) by constructing full van der Waals (vdW) heterostructures with atomically sharp and clean interfaces. The
Haiyang Pan, Anil Kumar Singh, Chusheng Zhang, Xueqi Hu, Jiayu Shi, Liheng An, Naizhou Wang, Ruihuan Duan, Zheng Liu, Stuart S. P. Parkin, Pritam Deb, Weibo Gao   +11 more
doaj   +1 more source

Erratum: Realizing Room-Temperature Resonant Tunnel Magnetoresistance in Cr/Fe/MgAl₂O₄ Quasi-Quantum Well Structures. [PDF]

Adv Sci (Weinh), 2019
Xiang Q, Sukegawa H, Belmoubarik M, Al-Mahdawi M, Scheike T, Kasai S, Miura Y, Mitani S.   +7 more
europepmc   +1 more source

Extremely Large Non-equilibrium Tunnel Magnetoresistance Ratio in CoRhMnGe Based Magnetic Tunnel Junction by Interface Modification. [PDF]

Front Chem, 2019
Feng Y, Cheng Z, Wang X.
europepmc   +1 more source

Realizing Room-Temperature Resonant Tunnel Magnetoresistance in Cr/Fe/MgAl₂O₄ Quasi-Quantum Well Structures. [PDF]

Adv Sci (Weinh), 2019
Xiang Q, Sukegawa H, Belmoubarik M, Al-Mahdawi M, Scheike T, Kasai S, Miura Y, Mitani S.   +7 more
europepmc   +1 more source