Results 271 to 280 of about 124,327 (319)

Large Voltage-Induced Changes in the Perpendicular Magnetic Anisotropy of an MgO-Based Tunnel Junction with an Ultrathin Fe Layer

Physical Review Applied, 2016
T. Nozaki, A. Kozioł-Rachwał, W. Skowroński, V. Zayets, Y. Shiota, S. Tamaru, H. Kubota, A. Fukushima, S. Yuasa, Yoshishige Suzuki   +9 more
semanticscholar   +3 more sources

Spin-Polarized Resonant Tunneling in Magnetic Tunnel Junctions

Science, 2002
Insertion of a thin nonmagnetic copper Cu(001) layer between the tunnel barrier and the ferromagnetic electrode of a magnetic tunnel junction is shown to result in the oscillation of the tunnel magnetoresistance as a function of the Cu layer thickness. The effect is interpreted in terms of the formation of spin-polarized resonant tunneling.
S, Yuasa, T, Nagahama, Y, Suzuki
openaire   +2 more sources

Voltage-Controlled Spintronic Stochastic Neuron Based on a Magnetic Tunnel Junction

Physical Review Applied, 2019
Neuromorphic computing based on stochastic spintronic units has attracted intense attention, but controlling such a stochastic system with high energy efficiency remains a challenge. The authors propose a voltage-controlled spintronic device that enables
Jialin Cai, B. Fang, Like Zhang, Wenxing Lv, Baoshun Zhang, Tiejun Zhou, G. Finocchio, Z. Zeng   +7 more
semanticscholar   +1 more source

Spin-dependent tunnelling in magnetic tunnel junctions

Journal of Physics: Condensed Matter, 2003
The phenomenon of electron tunnelling has been known since the advent of quantum mechanics, but continues to enrich our understanding of many fields of physics, as well as creating sub-fields on its own. Spin-dependent tunnelling (SDT) in magnetic tunnel junctions (MTJs) has recently aroused enormous interest and has developed in a vigorous field of ...
Tsymbal, Evgeny Y, Mryasov, O. N., LeClair, Patrick R.   +2 more
openaire   +1 more source

Compact Model of Dielectric Breakdown in Spin-Transfer Torque Magnetic Tunnel Junction

IEEE Transactions on Electron Devices, 2016
Spin-transfer torque magnetic tunnel junction (MTJ) is a promising candidate for nonvolatile memories thanks to its high speed, low power, infinite endurance, and easy integration with CMOS circuits.
You Wang, Hao Cai, Lirida Alves de Barros Naviner, Yue Zhang, Xiaoxuan Zhao, Erya Deng, Jacques-Olivier Klein, Weisheng Zhao   +7 more
semanticscholar   +1 more source

Complementary Magnetic Tunnel Junction Logic

IEEE Transactions on Electron Devices, 2014
This brief proposes and analyzes a novel logic family composed solely of magnetic tunnel junctions (MTJs) to form complimentary pull-up and pull-down networks. This logic family solves the challenge of direct cascading in spintronic logic circuits while also providing non-volatile data storage.
Joseph S. Friedman, Alan V. Sahakian
openaire   +1 more source

Microstructures of magnetic tunneling junctions

Journal of Applied Physics, 2003
We have investigated the microstructures of magnetic tunneling junctions using high-resolution transmission electron microscopy (HRTEM). These junctions exhibit large magnetoresistance of 34% at room temperature and at tens of gauss. HRTEM reveals well-defined layered polycrystalline metallic structures.
Lai-feng Li, Xiaoyong Liu, Gang Xiao
openaire   +1 more source

Magnetic tunnel junction pattern technique

Journal of Applied Physics, 2003
We have developed a magnetic tunnel junction (MTJ) pattern technique that involves transforming the magnetic layer above the tunnel barrier in unwanted areas into an insulator, thus providing insulation between different MTJ devices without suffering common tunnel barrier shorting problems.
Eugene Chen, Benjamin Schwarz, Chang Ju Choi, Witold Kula, Jerome Wolfman, Kamel Ounadjela, Sam Geha   +6 more
openaire   +1 more source

Photoconductance in magnetic tunnel junctions

IEEE Transactions on Magnetics, 2002
The applicability of magnetic tunnel junctions strongly depends on the electrical properties of the oxide barrier. The height and thickness of the energy barrier determines the resistance-area product of the junction, which is an important factor in the application of microstructured devices, such as MRAM.
Koller, P.H.P., Vanhelmont, F.W.M., Coehoorn, R., de Jonge, W.J.M.   +3 more
openaire   +2 more sources

Perpendicular-anisotropy magnetic tunnel junction switched by spin-Hall-assisted spin-transfer torque

Journal of Physics D: Applied Physics, 2015
We investigate the magnetization switching induced by spin-Hall-assisted spin-transfer torque (STT) in a three-terminal device consisting of a perpendicular-anisotropy magnetic tunnel junction (MTJ) and an β-W strip.
Zhaohao Wang, Weisheng Zhao, Erya Deng, Jacques-Olivier Klein, C. Chappert   +4 more
semanticscholar   +1 more source