Results 151 to 160 of about 451,786 (303)

Self‐Organized Growth of Catalyst‐Free Single Crystal WnO3n‐2 (n = 25) Nanowire Bundles on Si (111) via Selective He+ Ion Irradiation

open access: yesAdvanced Materials Interfaces, EarlyView.
A novel and efficient method is explored to synthesize 1D single‐crystal sub‐stoichiometric WnO3n‐2 (n = 25) nanowire bundles. The approach utilizes selective low‐energy He+ ion irradiation (27 eV) on Mo‐Ni doped WOx surface, achieving efficient catalyst‐free self‐organized growth of high aspect ratio nanowires at the temperature of 700 °C.
Maryna Bilokur   +3 more
wiley   +1 more source

Room Temperature Dy Spin‐Flop Switching in Strained DyFeO3 Thin Films

open access: yesAdvanced Materials Interfaces, EarlyView.
The two‐spin system DyFeO3, a canted bulk antiferromagnet with a spin reorientation between 40 and 50 K is epitaxially grown as thin film with compressive in‐plane strain. As a result, the spin reorientation increased by more than 20 K and a sign‐dependent linear M(T) dependence between 100 and 400 K is measured due to an induced alignment of Dy spins.
Banani Biswas   +5 more
wiley   +1 more source

Doping Effects on the Multiferroic Properties of KNbO3 Nanoparticles

open access: yesMagnetochemistry
The magnetization, polarization, and band-gap energy in pure and ion-doped KNbO3 (KNO) bulk and nanoparticles (NPs) are investigated theoretically using a microscopic model and Green’s function theory. It is shown that KNO NPs are multiferroic.
A. T. Apostolov   +2 more
doaj   +1 more source

Temperature Dependent Spin Dynamics in La0.67Sr0.33MnO3/Pt Bilayers

open access: yesAdvanced Materials Interfaces, EarlyView.
Visualization of inverse spin Hall effect due to scattering of the injected pure spin current via spin pumping ferromagnetic resonance in LSMO/Pt micro device. Abstract Complex ferromagnetic oxides such as La0.67Sr0.33MnO3 (LSMO) offer pathways for creating energy‐efficient spintronic devices with new functionalities.
Biswajit Sahoo   +8 more
wiley   +1 more source

Remarks on the Quantum Effects of Screw Dislocation Topology and Missing Magnetic Flux

open access: yesCondensed Matter
We revisit the interaction between a point charge and an inhomogeneous magnetic field that yields the magnetic quantum dot system. This magnetic field is defined by filling the whole space, except for a region of radius r0.
Knut Bakke
doaj   +1 more source

Magnets and Special Magnets

open access: yes, 2018
CERN Yellow Reports: School Proceedings, Vol 5 (2018): Proceedings of the CAS-CERN Accelerator School on Beam Injection, Extraction and ...
openaire   +2 more sources

Carbonization Tuned Core‐Shell Fe3O4@C Nanostructures with Enhanced Electromagnetic Wave Absorption

open access: yesAdvanced Materials Interfaces, EarlyView.
The core‐shell structured Fe3O4@C composites are prepared by employing an in situ polymerization and carbonization treatment method. The effect of carbonization temperature on electromagnetic wave absorption of H‐FO@C composites is symmetrically analyzed, and the impedance matching and attenuation ability are improved significantly by controlling ...
Jiang Guo   +12 more
wiley   +1 more source

A Theoretical Study of the Effects of Co-Doping Ions at K and Nb Sites on the Properties of KNbO3 Nanoparticles

open access: yesNanomaterials
Using a microscopic model and Green’s function theory, we have investigated the co-doping effect on ferroelectric KNbO3 nanoparticles. Let us emphasize that while the doping with transition metal ions at the Nb site leads an increase in the ...
Angel T. Apostolov   +2 more
doaj   +1 more source

Out-of-plane Edelstein effects: Electric-field induced magnetization in $p$-wave magnets [PDF]

open access: yesarXiv
In-plane magnetization is induced by the Edelstein effect in the Rashba spin-orbit interaction system. However, out-of-plane magnetization is more useful for switching a ferromagnetic memory. We study analytically and numerically electric-field induced magnetization in $p$-wave magnets with the aid of the Rashba interaction based on a simple two-band ...
arxiv  

The Rise of Refractory Transition‐Metal Nitride Films for Advanced Electronics and Plasmonics

open access: yesAdvanced Materials Interfaces, EarlyView.
Transition‐metal nitrides (TMNs) are exceptional materials with high stability, biocompatibility, and semiconductor integration, which have been extensively employed in various fields. However, the epitaxial growth of TMN films remains a challenge. The absence of high‐quality TMNs limits the understanding of their condensed matter physics and hinders ...
Jiachang Bi   +3 more
wiley   +1 more source

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